Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)
-
Li Liu
and
Yin-Tang Yang
Abstract
Current conduction mechanisms of SiC metal-oxide-semiconductor (MOS) capacitors on n-type 4H-SiC with or without NO annealing have been investigated in this work. It has been revealed that Fowler-Nordheim (FN) tunneling is the dominating current conduction mechanism in high electrical fields, with barrier height of 2.67 and 2.54 eV respectively for samples with NO and without NO annealing. A higher barrier height for NO-annealed sample indicates the effect of N element on the SiC/SiO2 interface quality. In the intermediate oxide field, instead of trap-assisted tunneling (TAT), Poole-Frenkel (PF) emission play the key role in this region. A combination of C-V characteristics also show us the advantages of NO annealing on the SiC/SiO2 characteristics.
Funding
This research was financially supported by the National Science Foundation for younger scholar: Atomic Theory-Based Research on the Impact of Surface Roughness of SiC/SiO2 Interface on Ion-Implantation SiC MOSFET Characteristics (JJ0500142501); Key Project of National Nature Science Foundation of China: A study of reliability in wide band-gap power semiconductor devices (JJ0200122502).
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