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Crystal orientation and residual stress in TiN film by synchrotron radiation

  • Takao Hanabusa EMAIL logo , Kazuya Kusaka , Masayuki Nishida , Tatsuya Matsue and Osami Sakata
Published/Copyright: February 16, 2022
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Abstract

The residual stress in a TiN film, the thickness of which is less than 1 µm, deposited by arc ion plating was measured using the SPring-8 synchrotron radiation facility installed at Japan Synchrotron Radiation Research Institute (JASRI). Films thicker than 300 nm have a {111} texture, whereas those with a thickness of 100 nm have a relatively random orientation. Instead of the conventional laboratory X-ray equipment, ultrabright synchrotron radiation can be used to precisely measure the residual stress in thin films with a thickness of 100 to 800 nm. The residual stress in thicker TiN films is about 7 GPa in compression and it is not affected by the film thickness. The slightly small compressive stress in a film of 100 nm in thickness may be due to the different crystal orientations in the film.


Dedicated to Professor Dr. Otmar Vöhringer on the occasion of his 65th birthday



Prof. Takao Hanabusa Department of Mechanical Engineering, Faculty of Engineering, Tokushima University Tokushima, 770-8506, Japan Tel.: +81 88 656 7377 Fax: +81 88 656 9082

  1. The authors would like to thank Dr. Harutaka Koike of the Japan Synchrotron Radiation Research Institute (JASRI) for his helpful support. The synchrotron radiation experiments were performed using the SPring-8 with the approval of the JASRI (Proposal No. 2002A 0258-ND1-np).

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Received: 2002-10-17
Published Online: 2022-02-16

© 2003 Carl Hanser Verlag, München

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