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Challenges of anamorphic high-NA lithography and mask making

  • Stephen D. Hsu EMAIL logo und Jingjing Liu
Veröffentlicht/Copyright: 8. Juni 2017
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Advanced Optical Technologies
Aus der Zeitschrift Advanced Optical Technologies Band 6 Heft 3-4

Abstract

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in ‘Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI’, vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in ‘Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI’, vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., ‘Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV ‘Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI’, (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative ‘attenuated SRAF’ to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., ‘Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in ‘Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI’, vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

Keywords: anamorphic imaging; attenuated assist features; CDU; edge placement error (EPE); EUV high-NA; mask error factor (MEF); mask-manufacturing rule check (MRC); mask writing; MEF tenor; source mask optimization (SMO); sub-resolution assist feature (SRAF)

Acknowledgments

The authors graciously thank Kurt Wampler, Jan van Schoot, Steve Hansen, Jim Wiley, Jianjun Jia, and Xiaoyang Li for their assistance, discerning critique, and discussion of this work.

References

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[2] A. Lio, in ‘Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII’, vol. 97760V (2016) doi: 10.1117/12.2225017.10.1117/12.2225017Suche in Google Scholar

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Received: 2017-3-25
Accepted: 2017-5-8
Published Online: 2017-6-8
Published in Print: 2017-6-27

©2017 THOSS Media & De Gruyter, Berlin/Boston

Artikel in diesem Heft

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
https://doi.org/10.1515/aot-2017-0024
Schlagwörter für diesen Artikel
anamorphic imaging; attenuated assist features; CDU; edge placement error (EPE); EUV high-NA; mask error factor (MEF); mask-manufacturing rule check (MRC); mask writing; MEF tenor; source mask optimization (SMO); sub-resolution assist feature (SRAF)

Artikel in diesem Heft

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
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