Development and performance of EUV pellicles
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Derk Brouns
Abstract
In a lithography process, an image on a mask (reticle) is projected onto a wafer. Continuous decrease in feature sizes also led to a reduction in the wavelength used for exposing. The next step is the move from 193-nm light to extreme ultra-violet (EUV) at 13.5 nm. This poses a lot of challenges that have been overcome in the past years. One of these challenges is the protection of the reticle from front side defects. This protection can be achieved by the use of an EUV pellicle. This is a thin membrane that protects particles from landing on the reticle surface, as will be explained in more detail later. With multiple semiconductor manufacturers preparing for volume EUV manufacturing, the need for a volume production-ready pellicle solution is here today. This article gives an overview of the performance of the current EUV pellicle solution and the status of the development of future EUV pellicles.
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©2017 THOSS Media & De Gruyter, Berlin/Boston
Artikel in diesem Heft
- Cover and Frontmatter
- Views
- Patterning roadmap: 2017 prospects
- Community
- Conference Notes
- News from the European Optical Society (EOS)
- Topical issue: Optical Nanostructuring
- Editorial
- Next-generation lithography – an outlook on EUV projection and nanoimprint
- Tutorial
- Photoresists in extreme ultraviolet lithography (EUVL)
- Review Articles
- Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
- Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
- EUV mask defectivity – a process of increasing control toward HVM
- Development and performance of EUV pellicles
- A review of nanoimprint lithography for high-volume semiconductor device manufacturing
- Large area nanoimprint by substrate conformal imprint lithography (SCIL)
- Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
- Research Articles
- A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
- Challenges of anamorphic high-NA lithography and mask making
- Research Article
- Chip bonding of low-melting eutectic alloys by transmitted laser radiation
Artikel in diesem Heft
- Cover and Frontmatter
- Views
- Patterning roadmap: 2017 prospects
- Community
- Conference Notes
- News from the European Optical Society (EOS)
- Topical issue: Optical Nanostructuring
- Editorial
- Next-generation lithography – an outlook on EUV projection and nanoimprint
- Tutorial
- Photoresists in extreme ultraviolet lithography (EUVL)
- Review Articles
- Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
- Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
- EUV mask defectivity – a process of increasing control toward HVM
- Development and performance of EUV pellicles
- A review of nanoimprint lithography for high-volume semiconductor device manufacturing
- Large area nanoimprint by substrate conformal imprint lithography (SCIL)
- Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
- Research Articles
- A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
- Challenges of anamorphic high-NA lithography and mask making
- Research Article
- Chip bonding of low-melting eutectic alloys by transmitted laser radiation
