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EUV mask defectivity – a process of increasing control toward HVM

  • Rik Jonckheere

    Rik Jonckheere is senior researcher mask technology in the Advanced Patterning Department at imec. He holds a Masters Degree in Solid-State Physics (1984). He joined imec in 1985 and has been working on e-beam direct write and experimental mask making. For 20 years he has been driving the interactions of imec’s Advanced Lithography Program with the mask making community. Over the past 10 years his focus gradually has become EUV mask defectivity, its printability and its mitigation.

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Veröffentlicht/Copyright: 8. Juni 2017
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Advanced Optical Technologies
Aus der Zeitschrift Advanced Optical Technologies Band 6 Heft 3-4

Abstract

This article covers the various aspects of defectivity of a typical mask used for extreme ultra-violet (EUV) lithography. The focus of the present article is on those aspects that are more specific for EUV lithography. A prime type of defect that fully falls under the really EUV-specific category consists of the so-called multilayer defects (ML-defects): these defects relate to the ML mirror on the mask, which makes it reflective. While not specific, particle contamination plays a special role in EUV lithography and includes two aspects: both front- and backside of an EUV mask have peculiarities beyond historical deep-UV lithography. Frontside particles can print when they exceed a critical size and, while solvable as in (deep)-UV lithography by means of a pellicle, there are specific challenges. Backside particles can distort a clamped EUV reticle, and the resulting local non-flatness of the reticle may result in focus and overlay errors on the wafer. A last aspect that requires special attention for EUVL can be categorized under reticle degradation by extensive use. That includes the high-volume manufacturing-oriented conditions of high source power needed to obtain competitive throughput. For each aspect of EUV mask defectivity, and hence each type of defect, the paper reviews how the community tackles them and how their possible impact on the result of wafer printing with a given EUV reticle is minimized. This includes a summary of the authors’ own contribution to related learning and developments. Finally, a personal interpretation is given of what are the remaining open items before a workable or full solution can be considered in place.

Keywords: contamination; EUV lithography; mask defects; ML-defects; particles

About the author

Rik Jonckheere

Rik Jonckheere is senior researcher mask technology in the Advanced Patterning Department at imec. He holds a Masters Degree in Solid-State Physics (1984). He joined imec in 1985 and has been working on e-beam direct write and experimental mask making. For 20 years he has been driving the interactions of imec’s Advanced Lithography Program with the mask making community. Over the past 10 years his focus gradually has become EUV mask defectivity, its printability and its mitigation.

Acknowledgment

This invited article gives a review from an expert perspective. This personal viewpoint does not necessarily reflect a company opinion about the subject. Such expert opinion, when expressed to the community, as in the present article, could trigger dedicated discussion among professionals active in a similar field. This could lead to (even) more sound solutions than are presently already in place, under development, or, at least, under consideration. Logically, this published opinion builds on experience gathered on this subject as an employee of imec, based on the opportunities defined by the available tool set and on the network capabilities with external parties, as an independent R&D entity. A publication with a similar broad coverage of the different aspects of EUV mask defectivity and the availability of appropriate infrastructure was made by Liang in late 2015 [59] and is recommended as another expert review, from a different perspective.

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Received: 2017-3-6
Accepted: 2017-4-19
Published Online: 2017-6-8
Published in Print: 2017-6-27

©2017 THOSS Media & De Gruyter, Berlin/Boston

Artikel in diesem Heft

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
https://doi.org/10.1515/aot-2017-0017
Schlagwörter für diesen Artikel
contamination; EUV lithography; mask defects; ML-defects; particles

Artikel in diesem Heft

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
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