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Imaging Hexagonal Based Superstructures. A New Stable Orthorhombic Structure in the Au-Mn System
-
G. Van Tendeloo
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Kapitel in diesem Buch
- Frontmatter I
- Classification Scheme II
- PROFESSOR Dr. Dr. h.c. HEINZ BETHGE V
- Contents 345
-
Original Papers
- On Cluster Mobilities in Nucleation and Growth Processes of Epitaxial Thin Films 353
- On the Saturation Cluster Density in Deposition of Thin Films from Vapours 369
- Conditions of Step Decoration on Crystal Surfaces 375
- Observation of NaCl-LiCl High-Temperature Phases by Gold Decoration on the Solid-Melt Interface of Czochralski Grown Crystals 385
- On the Gold Decoration of KCl:Pb Crystal Surfaces 395
- Observation and Interpretation of Spirals for Spiral Growth from the Liquid State 403
- Monte-Carlo Simulation of Dendritic Growth from the Melt 415
- Formation of Aluminium Thin Films in the Presence of Oxygen and Nickel 427
- Sulphur Segregation on the (111) Iron Surface Studied by LEED, AES, and WFC 437
- Stationary Stochastic Adparticle Flip-Flop as a Precursor to Surface Diffusion 447
- A Theory of the Snoek-Köster Relaxation (Cold-Work Peak) in Metals 457
- Cross Slip of Single Dissociated Screw Dislocations in Silicon and Germanium 469
- Aggregation and Precipitation Hardening in NaCl : Ca Crystals 479
- Formation of Radiation-Induced Voids on Dislocations in LiF 489
- TEM Studies of Displacement Cascades in Ion-Bombarded Cu3Pd and Fe3Al 497
- Precipitation and Dissolution Processes in Age-Hardenable A1 Alloys. A Comparison of Positron Annihilation and X-Ray Small-Angle Scattering Investigations (I) 509
- Problems of the Formation of Dislocation Structures in Heteroepitaxial Layers 519
- Crack Propagation in MgO during In-Situ Deformation in the High-Voltage Electron Microscope 529
- Microstructure Dependence of the Brittle Fracture of Alumina 537
- Penetration and Resolution of STEM and CTEM in Amorphous and Polycrystalline Materials 545
- Methodical Aspects of HVEM in In-Situ Experiments in the Field of Condensed Matter 549
- The Role of Environmental Conditions in In-Situ Experiments in the High-Voltage Electron Microscope 563
- On the Determination of Intergranular Orientation Relationships by Kikuchi Electron Diffraction 569
- Analysis of Many-Beam Lattice Images of Y - A l Garnet Crystals 573
- Dislocation Emission in CdS 583
- Measurements of Microfields on Semiconductors 589
- Alignment of Defects in Ge Implanted with Te+ Ions 599
- On X-Ray and Electron Microscopic Characterization of Lattice Defects in AIIBVI Semiconductor Compounds 603
- Combined Scanning (EBIC) and Transmission Electron Microscopic Investigations of Dislocations in Semiconductors 611
- Vieillissement dynamique dans l'alliage Fe-Co-2%V 621
- Influence of the Lattice Component on the Thermal Conductivity Minimum of Aluminium 631
- Electronic Conduction in Dye-Sensitized Selenium Films 635
- The Effect of Ag Impurity on the Real Structure of ZnTe 639
- Distribution of Ion-Bombardment Implanted 85Kr in Si, Cu, and SiO2 647
- Photoconductive Properties of Sputtered TiO2 Films 653
- On the Theory of Double Injection in Semiconductors with Continuous Distribution of Trapping Levels within the Gap 661
- On the Room Temperature Stability of Metastable Phases Formed at 200 °C in Al-Zn Alloys 673
- Imaging Hexagonal Based Superstructures. A New Stable Orthorhombic Structure in the Au-Mn System 681
- The Phenomenon of Controllable Hydrogen Phase "Naklep" of Metals and Alloys 691
- On the Electrical Activity of Oxygen in Silicon 699
- Electron Microscopic Study of the Domain Structure and of the Transition State in Cu0.5In2.5Se4 709
- Spectroscopic Study of Phase Polymorphism and Vibrational Assignments for 2,2-Dinitropropane 723
- A Study of Thermal Conversion of Interstitials in Platinum by Means of Electrical Resistivity Measurements 735
- TEM Method for Identification of Domains in Materials Which Undergo a Pm3m -> R3c or R3c Phase Transition 747
- The Stress Relaxation of Polyvinyl Chloride in the Macrodeformation Range 751
- Magnetostriction Measurements on Co-Base Amorphous Alloys 763
- The Electrical Recombination Efficiency of Individual Edge Dislocations and Stacking Fault Defects in n-Type Silicon 771
- Flow Stress and Activation Volume of Some Cold-Worked Copper-Based Solid Solutions 785
- A Novel Technique for Preparing Tungsten Field Cathodes with [001] Orientation 793
- Grain Boundary Analysis in TEM (III) 801
-
Short Notes
- Influence of Structural Defects and Concentration Inhomogeneities in GaAs Epitaxial Layers on Reverse I-U Characteristics of Schottky Barrier Diodes 813
- Silicon Beam Epitaxy for Fabrication of Devices 817
- Entropy and Volume of Solution of Substitutional Impurities in Solids 821
- Helical Density Waves in a Strongly Degenerate Electron-Hole Plasma 825
- Domain Wall Resonance in Zn and Cu Substituted Magnetite 831
- Zur Auswertung der Gleichungen der Lindhard-Scharff-Schiott-Theorie 835
- Debye Temperatures of Silver and Aluminium at High Temperatures. Some New Correlations 841
- The Crystal Structures of HoF3 and TbF3 by Neutron Diffraction 845
- Theimoluminescence of Z1 Centres in NaCl:Ca 849
- The Effect of Real Structure on Optical Properties of ZnTe 855
- Observation of Conductivity Anomalies in Small Needle-Like Crystals of TEA(TCNQ)2 861
- High Orientation of Coprecipitated Barium Ferrite by Uniaxial Hot- Pressing 865
- Photovoltaic Effect and Photoconductivity in Reduced Potassium Niobate Crystals 867
- Activation theimique de la deformation plastique de l'oxyde cuivreux 873
- Electronic Mobility in Polyethylene Terephthalate 879
- Overlapping between Magnetic and a-y Transition in the FePd System 883
- Critical Damping Condition in IMP ATT Diodes 889
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 893
- Classsification Scheme — Continued 901
- Backmatter 902
Kapitel in diesem Buch
- Frontmatter I
- Classification Scheme II
- PROFESSOR Dr. Dr. h.c. HEINZ BETHGE V
- Contents 345
-
Original Papers
- On Cluster Mobilities in Nucleation and Growth Processes of Epitaxial Thin Films 353
- On the Saturation Cluster Density in Deposition of Thin Films from Vapours 369
- Conditions of Step Decoration on Crystal Surfaces 375
- Observation of NaCl-LiCl High-Temperature Phases by Gold Decoration on the Solid-Melt Interface of Czochralski Grown Crystals 385
- On the Gold Decoration of KCl:Pb Crystal Surfaces 395
- Observation and Interpretation of Spirals for Spiral Growth from the Liquid State 403
- Monte-Carlo Simulation of Dendritic Growth from the Melt 415
- Formation of Aluminium Thin Films in the Presence of Oxygen and Nickel 427
- Sulphur Segregation on the (111) Iron Surface Studied by LEED, AES, and WFC 437
- Stationary Stochastic Adparticle Flip-Flop as a Precursor to Surface Diffusion 447
- A Theory of the Snoek-Köster Relaxation (Cold-Work Peak) in Metals 457
- Cross Slip of Single Dissociated Screw Dislocations in Silicon and Germanium 469
- Aggregation and Precipitation Hardening in NaCl : Ca Crystals 479
- Formation of Radiation-Induced Voids on Dislocations in LiF 489
- TEM Studies of Displacement Cascades in Ion-Bombarded Cu3Pd and Fe3Al 497
- Precipitation and Dissolution Processes in Age-Hardenable A1 Alloys. A Comparison of Positron Annihilation and X-Ray Small-Angle Scattering Investigations (I) 509
- Problems of the Formation of Dislocation Structures in Heteroepitaxial Layers 519
- Crack Propagation in MgO during In-Situ Deformation in the High-Voltage Electron Microscope 529
- Microstructure Dependence of the Brittle Fracture of Alumina 537
- Penetration and Resolution of STEM and CTEM in Amorphous and Polycrystalline Materials 545
- Methodical Aspects of HVEM in In-Situ Experiments in the Field of Condensed Matter 549
- The Role of Environmental Conditions in In-Situ Experiments in the High-Voltage Electron Microscope 563
- On the Determination of Intergranular Orientation Relationships by Kikuchi Electron Diffraction 569
- Analysis of Many-Beam Lattice Images of Y - A l Garnet Crystals 573
- Dislocation Emission in CdS 583
- Measurements of Microfields on Semiconductors 589
- Alignment of Defects in Ge Implanted with Te+ Ions 599
- On X-Ray and Electron Microscopic Characterization of Lattice Defects in AIIBVI Semiconductor Compounds 603
- Combined Scanning (EBIC) and Transmission Electron Microscopic Investigations of Dislocations in Semiconductors 611
- Vieillissement dynamique dans l'alliage Fe-Co-2%V 621
- Influence of the Lattice Component on the Thermal Conductivity Minimum of Aluminium 631
- Electronic Conduction in Dye-Sensitized Selenium Films 635
- The Effect of Ag Impurity on the Real Structure of ZnTe 639
- Distribution of Ion-Bombardment Implanted 85Kr in Si, Cu, and SiO2 647
- Photoconductive Properties of Sputtered TiO2 Films 653
- On the Theory of Double Injection in Semiconductors with Continuous Distribution of Trapping Levels within the Gap 661
- On the Room Temperature Stability of Metastable Phases Formed at 200 °C in Al-Zn Alloys 673
- Imaging Hexagonal Based Superstructures. A New Stable Orthorhombic Structure in the Au-Mn System 681
- The Phenomenon of Controllable Hydrogen Phase "Naklep" of Metals and Alloys 691
- On the Electrical Activity of Oxygen in Silicon 699
- Electron Microscopic Study of the Domain Structure and of the Transition State in Cu0.5In2.5Se4 709
- Spectroscopic Study of Phase Polymorphism and Vibrational Assignments for 2,2-Dinitropropane 723
- A Study of Thermal Conversion of Interstitials in Platinum by Means of Electrical Resistivity Measurements 735
- TEM Method for Identification of Domains in Materials Which Undergo a Pm3m -> R3c or R3c Phase Transition 747
- The Stress Relaxation of Polyvinyl Chloride in the Macrodeformation Range 751
- Magnetostriction Measurements on Co-Base Amorphous Alloys 763
- The Electrical Recombination Efficiency of Individual Edge Dislocations and Stacking Fault Defects in n-Type Silicon 771
- Flow Stress and Activation Volume of Some Cold-Worked Copper-Based Solid Solutions 785
- A Novel Technique for Preparing Tungsten Field Cathodes with [001] Orientation 793
- Grain Boundary Analysis in TEM (III) 801
-
Short Notes
- Influence of Structural Defects and Concentration Inhomogeneities in GaAs Epitaxial Layers on Reverse I-U Characteristics of Schottky Barrier Diodes 813
- Silicon Beam Epitaxy for Fabrication of Devices 817
- Entropy and Volume of Solution of Substitutional Impurities in Solids 821
- Helical Density Waves in a Strongly Degenerate Electron-Hole Plasma 825
- Domain Wall Resonance in Zn and Cu Substituted Magnetite 831
- Zur Auswertung der Gleichungen der Lindhard-Scharff-Schiott-Theorie 835
- Debye Temperatures of Silver and Aluminium at High Temperatures. Some New Correlations 841
- The Crystal Structures of HoF3 and TbF3 by Neutron Diffraction 845
- Theimoluminescence of Z1 Centres in NaCl:Ca 849
- The Effect of Real Structure on Optical Properties of ZnTe 855
- Observation of Conductivity Anomalies in Small Needle-Like Crystals of TEA(TCNQ)2 861
- High Orientation of Coprecipitated Barium Ferrite by Uniaxial Hot- Pressing 865
- Photovoltaic Effect and Photoconductivity in Reduced Potassium Niobate Crystals 867
- Activation theimique de la deformation plastique de l'oxyde cuivreux 873
- Electronic Mobility in Polyethylene Terephthalate 879
- Overlapping between Magnetic and a-y Transition in the FePd System 883
- Critical Damping Condition in IMP ATT Diodes 889
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 893
- Classsification Scheme — Continued 901
- Backmatter 902