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Investigation of Lattice Strain in Proton-Irradiated GaP by a Modified Auleytner Technique

  • D. Stephan und V. Geist
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Volume 87, Number 2 February 16
Ein Kapitel aus dem Buch Volume 87, Number 2 February 16
© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

Kapitel in diesem Buch

  1. Frontmatter I
  2. Contents 393
  3. Original Papers
  4. Structure
  5. On the Ordering Mechanism of Ni2Mo 401
  6. An X-Ray Wave Theory for Heavily Distorted Crystals 417
  7. Ruby Structure Peculiarities Derived from X-Ray Diffraction Data 425
  8. Properties and Structure of Silicon Oxynitride Films Obtained in a Hydrazine Plasma 435
  9. Void Swelling of Ferritic Steel during 1 MeV Electron Irradiation 441
  10. Measurements of the Backscattering of 20 to 60 keV Electrons from Double Layers at Various Angles of Incidence 451
  11. Determination of Long-Range Order Parameter in Alloys by Means of Electron Diffraction in the Electron Microscope 459
  12. Local Tetragonality and Atomic Structure in Nb3Sn Superconductor Studied by High Resolution Electron Microscopy 473
  13. On the Influence of Crystal Orientation on the High Resolution Image Contrast of Polytypes 483
  14. A New Method for the Interpretation of Energy Distributions Measured on Secondary Ions 499
  15. Contrast Investigations of Surface Acoustic Waves by Stroboscopic Topography 507
  16. Observation of Domain Structure in a (111) Oriented Grain oi Fe (Si) by X-Ray White Beam Topography 517
  17. Twinning of the Hexagonal (A) Structure of Rare Earth Sesquioxides 527
  18. A New Method for Measuring the Mixed Splay-Bend Elasticity and the Anchoring Strength in a Nematic Film 537
  19. Lattice properties
  20. Thermal Conductivity and Specific Heat of an Epoxy Resin/Epoxy Resin Composite Material at Low Temperatures 543
  21. Defects, atomistic aspects
  22. Strength, Plasticity, and Fracture of Ribbons of Fe5Co70Si15B10 Amorphous Alloy 549
  23. Effect of Normal Stresses on Yield Stress of Molybdenum Single Crystals at Slip on the Plane (211) 559
  24. Analysis of Kic and Its Temperature Dependence of Metals by a Simplified Dislocation Model 565
  25. The Superposition of Thermal Activation in Dislocation Movement 571
  26. Diffuse X-Ray Scattering from Neutron-Irradiated Silicon Doped with Boron 583
  27. Investigation of Lattice Strain in Proton-Irradiated GaP by a Modified Auleytner Technique 589
  28. The Integrated Intensities of the Laue-Diffracted X-Rays for Monocrystals Containing Macroscopically Homogeneously Distributed Defects 597
  29. Magnetism
  30. Changes of the Magnetic Properties of the Nearly Non-Magnetostrictive Amorphous Alloy CossFesNiioSinBie by Annealing under Tensile Stress 609
  31. Magnetic and Dielectric Eelaxations of Fe3O4 and Some Ferrites 617
  32. Localized electronic states and transitions
  33. Optically Induced Photomemory by 1 to 1.35 eV Photons in the Near-Intrinsic Spectral Eegion on Semiinsulating Bulk GaAs 623
  34. Hole-Induced Exoelectron Emission and Luminescence of Corundum Doped with Mg 629
  35. The Influence of Coulomb Screening and of NNi-Pairs on the Recombination of Bound Excitons in GraAs 1-X Px Mixed Crystals 641
  36. On the Dominant Recombination Level of Platinum in Silicon 651
  37. Electric transport
  38. The Effect of Annealing and Hydrogenation on the Dislocation Conduction in Silicon 657
  39. The Criteria of Diffusionless Solution Validity in the Theory of Exclusion in "Super-Pure" Semiconductors 667
  40. On the Determination of the Carrier Concentration in Large-Grain Polycrystalline InP, GaAs, and GaP by Hall Effect Measurements 673
  41. Analysis of Gralvanomagnetic Parameters in Semi-Insulating GaAs with Respect to the Three-Band Model 683
  42. Device-related phenomena
  43. Study of Degradation of Diode Structures by the Use of Probes 693
  44. The MISS Device 699
  45. A Regeneration Model for Conducting Filaments in MIM Diodes 709
  46. Current-Voltage Characteristics of Diodes with and without Light 719
  47. Comparing Furnace to Laser Annealing in Ion Implanted Surface Passivated MINP Solar Cells 735
  48. Erratum
  49. Fraunhofer Diffraction of X - Bay Beams at Bragg Incidence in Distorted Crystals 741
  50. Short Notes
  51. The Determination of the Distribution Function of Activation Energies of Structural Changes in Amorphous Se 747
  52. Theoretical Evidence for Opposite Moving Phase Fronts during Ultrafast Solidification Processes 753
  53. Structure and Chemical Composition of RF-Sputtered Boron Nitride Films 757
  54. Phase Diagram of the ZnP2-ZnAs2 System 761
  55. Spatial Distribution of the Components in the Au/GaAs System after Scanning Laser Annealing 765
  56. Calculation of the Ga-Al-Sb Phase Diagram Using the Redlich-Kister Expression 769
  57. The Interaction between Moving Domain Walls in Rochelle Salt Crystals 773
  58. The Effect of Non-Stoichiometry on Thermal Vibrations in TiCx 777
  59. The Effect of Doping on the Motion of Partial Dislocations in Silicon 781
  60. Effect of Carbon on the Minority Carrier Lifetime in Heat-Treated Oxygen-Containing Silicon 787
  61. Change of Magnetic Resonance Parameters in FeBOgiNiO Induced by Radiation ( λ = 1.06 μm) 791
  62. Reorientation of Domain Walls in a Garnet Film under the Action of an AC Magnetic Field 795
  63. Difference between Domain Wall Motion in Single Ciystal and Polycrystalline YIG Observed by Pulsed NMR 801
  64. Photo-Induced Thermoluminescence of X-Irradiated α-Al2O3 805
  65. Time Resolved Spectra in CuGaS2 809
  66. Flash-Lamp Annealing of Si-SiO2 Transition Layer Defects 813
  67. The Influence of the Phase Transformation on the Luminescence oi NbPO5 819
  68. Dielectric Properties of Tourmaline 823
  69. Thermopower in Amorphous Fe 1-x Six Films 829
  70. Change in the Hall Coefficient with Magnetic Field in Silicon, Irradiated by Neutrons 833
  71. The Physical and Geometrical Magnetoresistance of n-Si Irradiated by Neutrons 837
  72. On the Properties of Amorphous Silicon Films and Amorphous Si-Crystalline Si Heterojunction 841
  73. Saturation and Oscillation of Current in Semiconductors Subjected to Uniaxial Deformation 847
  74. Metal-(Tunnel) Insulator-Semiconductor Switch (MISS) with Negative Resistances both in Forward and Reverse Directions 851
  75. Pre-Printed Titles 855
Heruntergeladen am 2.10.2025 von https://www.degruyterbrill.com/document/doi/10.1515/9783112497586-021/html
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