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Annealing-Induced Changes in the Photoluminescence of Deformed CaO Single Crystals
-
J. A. Garcia
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Kapitel in diesem Buch
- Frontmatter I
- Author Index III
- Contents 1
-
Review Article
- The Pulsed MIS Capacitor: A Critical Review 13
-
Original Papers
-
Structure
- Neutron Diffraction by a Mosaic Crystal with Large Crystallite 45
- A Model of Crystallization Processes Controlled by Temperature Pulses in Amorphous Semiconductors 57
- Structural and Electrical Properties of the LaCo 1-x MnxO2 and LaCo 1-x FexO3 Systems 65
- Liquidus Curves of Eutectic Na-K and Na-Cs Systems from Semiempirical Theories of Mixtures 73
- Double Crystal Topography Compensating for the Strain in Processed Samples 79
- Determination of Sulphur Coverages on F e ( l l l ) by Means of Quantitative Auger-Electron Spectrometry 89
-
Defects, atomistic aspects
- Fast-Neutron Radiation Damages in Heavily Doped p-Silicon 95
- Diffusion of Antimony (125Sb) in Polycrystalline Silicon 105
- Instability Conditions for a Spatially Homogeneous Yoid Distribution in Irradiated Metals 117
- H and D Diffusion in Y and Nb in the Presence of a Temperature Gradient 123
- Contrast Analysis of Intrinsic and Extrinsic Stacking Faults in H.C.P. Cobalt 133
- Conduction Electron Spin Resonance of Blue Sodalite 147
- Irradiation-Induced Aggregate Centers in Single Crystal A1203 155
- The Effect of Temperature on Dislocation Structures in Ni3Al 163
- The Chemical Diffusion of In in Hg 0.8 Cd 0.2 Te 173
- Effect of Plastic Deformation on the Density of Mg-Doped LiF Crystals 185
- Low-Temperature Internal Friction Peaks in Pure Zirconium Deformed at 300 K 191
- Ordering of Defects, Thermodynamic and Transport Properties of Solid Oxide Electrolytes with Fluorite Structure 199
-
Magnetism
- The Magnetic Relaxation Spectrum of Plastically Deformed Non-Oriented Iron-Silicon Steel in the Temperature Bange 200 to 800 K 213
-
Extended electronic states and transitions
- Indirect Electronic Transitions in Single Crystals of Triglycine Sulfate By 225
-
Localized electronic states and transitions
- Application of the Fractional Glow Technique in the Analysis of a Complex Thermoluminescence Pattern 231
- Annealing-Induced Changes in the Photoluminescence of Deformed CaO Single Crystals 237
- EPR Studies of Dimensionality in Copper Calcium Acetate Hexahydrate 243
- On the Thermoluminescent Mechanism of a Calcium Fluorapatite Single Crystal Doped with Mn 2+ 249
- Electrical and Optical Properties of Non-Crystalline As-Se-Cd Thin Films 255
- Absorption Centers of Bi12GeO20 and Bi12SiO20 Crystals 263
- Propriétés structurales, magnétiques et électriques des oxyfluorures V 1-x MxO 2-2x F2x (M = Mg, Ni) 271
-
Electric transport
- Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes 283
- Effect of Multiple Trapping on Photoreceptor Discharge Characteristics under the Condition of Surface Carrier Generation 293
- Kinetic Properties and Phase Transitions in Sb2Te3 under Hydrostatic Pressure up to 9 GPa 301
- Dose Effects in Transient Radiation-Induced Conductivity in Polymers 311
- Electrodeposited Tungsten Selenide Films II. Optical, Electrical, Electrochemical Characterization and Photoelectrochemical Solar Cell Studies 321
- The Effect of Pressure on Conductivity and Permittivity of As2Te3-Based Glasses 333
- Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents 347
- Trap Induction and Breakdown Mechanism in SiO2 Films 353
- Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of Si0/Nb205 and Nb2O5 363
- Electron Transport in TiO 2-x at Intermediate Temperatures 300 K < T < 1500 K 375
-
Device-related phenomena
- Technical Method of Determination of the Interface Trap Density 383
- On the Intrinsic lettering in Cu-Contaminated Cz-Si 389
- Barrier Height and Its Instability in Al-Ultrathin SiO2-n/p-Si Devices 403
-
Errata
- X-Ray Bond-Type Diffractometer Investigations on V305 in the Temperature Interval 298 to 480 K Including the Phase Transition Temperature Tt = 428 K 415
-
Short Notes
- Cobaltocene Intercalate of the Layered SnSe2 421
- Absolute Measurements of Lattice Spacings in Surface Layers of Crystals 425
- X-Ray Thermal Investigations of Cadmium Iodide Single Crystals 429
- Influence of Temperature of Diffusion Growth and Morphology of Nb3Sn Superconducting Layer on the Value of the Pinning Force 433
- The Influence of Particle Sizes on the Oxidation Kinetics of AgSn Alloys Studied by Mossbauer Spectroscopy 437
- Space Correlation of Microdefects with Recombination of Excess Carriers inCZ-Si 443
- Formation of the F.C.C. Phase in Fe-C Alloys by Rapid Quenching 447
- Mossbauer Spectroscopy on Amorphous FexNi 80-x B20 after Neutron Irradiation 451
- A New Method for Measurement of Stress in the Neighbourhood of Window Edges in Multiple Layers 455
- X-Ray Debye Temperature of Ytterbium 457
- Relative Hydrogen Content in Plasma-Enhanced CVD Silicon Nitride Films: Substrate Temperature Dependence and Effect of Thermal Annealing 459
- Diffusion of Boron Implanted into Silicon 465
- Interatomic Bond Rupture in the System of Two Coupled Anharmonic Chains with a Weak Interaction 471
- Properties of Sb2Te3 Single Crystals Doped with Tl Atoms 475
- The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique 481
- The Nature of Acceptor Centres in Zinc and Cadmium Diphosphide 485
- On the Nature of Energy Levels in ZnGeP2 491
- Axial ΔM = ±3 and Cubic Δm = ±1 Forbidden Transitions in the EPR Spectrum of Mn 2+ in ZnS 495
- Photoluminescence Spectra of Si-Implanted G2As 499
- Electrical Conductivity of NH4H2PO4 Single Crystal 503
- Peierls Transition and Fluctuation Conductivity in Thin Lead-Phthalocyanine (PbPc) Films 509
- The Effect of Substrate on the Electrical Properties of As2S3 Films 515
- Photoconductivity of Te-Se-Au and Te-Se-Cd Structures 519
- Short-Pulsed Alloying of Contacts onGaAs 525
- Photoelectrochemical Solar Cells with Semiconducting Polymers Prepared by Modification of Polyvinylchloride PVC and Polytetrafluoroethylene PTFE2 529
-
Erratum
- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide 535
- The Interaction between Moving Domain Walls in Rochelle Salt Crystals 537
- Pre-Printed Titles 539
Kapitel in diesem Buch
- Frontmatter I
- Author Index III
- Contents 1
-
Review Article
- The Pulsed MIS Capacitor: A Critical Review 13
-
Original Papers
-
Structure
- Neutron Diffraction by a Mosaic Crystal with Large Crystallite 45
- A Model of Crystallization Processes Controlled by Temperature Pulses in Amorphous Semiconductors 57
- Structural and Electrical Properties of the LaCo 1-x MnxO2 and LaCo 1-x FexO3 Systems 65
- Liquidus Curves of Eutectic Na-K and Na-Cs Systems from Semiempirical Theories of Mixtures 73
- Double Crystal Topography Compensating for the Strain in Processed Samples 79
- Determination of Sulphur Coverages on F e ( l l l ) by Means of Quantitative Auger-Electron Spectrometry 89
-
Defects, atomistic aspects
- Fast-Neutron Radiation Damages in Heavily Doped p-Silicon 95
- Diffusion of Antimony (125Sb) in Polycrystalline Silicon 105
- Instability Conditions for a Spatially Homogeneous Yoid Distribution in Irradiated Metals 117
- H and D Diffusion in Y and Nb in the Presence of a Temperature Gradient 123
- Contrast Analysis of Intrinsic and Extrinsic Stacking Faults in H.C.P. Cobalt 133
- Conduction Electron Spin Resonance of Blue Sodalite 147
- Irradiation-Induced Aggregate Centers in Single Crystal A1203 155
- The Effect of Temperature on Dislocation Structures in Ni3Al 163
- The Chemical Diffusion of In in Hg 0.8 Cd 0.2 Te 173
- Effect of Plastic Deformation on the Density of Mg-Doped LiF Crystals 185
- Low-Temperature Internal Friction Peaks in Pure Zirconium Deformed at 300 K 191
- Ordering of Defects, Thermodynamic and Transport Properties of Solid Oxide Electrolytes with Fluorite Structure 199
-
Magnetism
- The Magnetic Relaxation Spectrum of Plastically Deformed Non-Oriented Iron-Silicon Steel in the Temperature Bange 200 to 800 K 213
-
Extended electronic states and transitions
- Indirect Electronic Transitions in Single Crystals of Triglycine Sulfate By 225
-
Localized electronic states and transitions
- Application of the Fractional Glow Technique in the Analysis of a Complex Thermoluminescence Pattern 231
- Annealing-Induced Changes in the Photoluminescence of Deformed CaO Single Crystals 237
- EPR Studies of Dimensionality in Copper Calcium Acetate Hexahydrate 243
- On the Thermoluminescent Mechanism of a Calcium Fluorapatite Single Crystal Doped with Mn 2+ 249
- Electrical and Optical Properties of Non-Crystalline As-Se-Cd Thin Films 255
- Absorption Centers of Bi12GeO20 and Bi12SiO20 Crystals 263
- Propriétés structurales, magnétiques et électriques des oxyfluorures V 1-x MxO 2-2x F2x (M = Mg, Ni) 271
-
Electric transport
- Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes 283
- Effect of Multiple Trapping on Photoreceptor Discharge Characteristics under the Condition of Surface Carrier Generation 293
- Kinetic Properties and Phase Transitions in Sb2Te3 under Hydrostatic Pressure up to 9 GPa 301
- Dose Effects in Transient Radiation-Induced Conductivity in Polymers 311
- Electrodeposited Tungsten Selenide Films II. Optical, Electrical, Electrochemical Characterization and Photoelectrochemical Solar Cell Studies 321
- The Effect of Pressure on Conductivity and Permittivity of As2Te3-Based Glasses 333
- Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents 347
- Trap Induction and Breakdown Mechanism in SiO2 Films 353
- Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of Si0/Nb205 and Nb2O5 363
- Electron Transport in TiO 2-x at Intermediate Temperatures 300 K < T < 1500 K 375
-
Device-related phenomena
- Technical Method of Determination of the Interface Trap Density 383
- On the Intrinsic lettering in Cu-Contaminated Cz-Si 389
- Barrier Height and Its Instability in Al-Ultrathin SiO2-n/p-Si Devices 403
-
Errata
- X-Ray Bond-Type Diffractometer Investigations on V305 in the Temperature Interval 298 to 480 K Including the Phase Transition Temperature Tt = 428 K 415
-
Short Notes
- Cobaltocene Intercalate of the Layered SnSe2 421
- Absolute Measurements of Lattice Spacings in Surface Layers of Crystals 425
- X-Ray Thermal Investigations of Cadmium Iodide Single Crystals 429
- Influence of Temperature of Diffusion Growth and Morphology of Nb3Sn Superconducting Layer on the Value of the Pinning Force 433
- The Influence of Particle Sizes on the Oxidation Kinetics of AgSn Alloys Studied by Mossbauer Spectroscopy 437
- Space Correlation of Microdefects with Recombination of Excess Carriers inCZ-Si 443
- Formation of the F.C.C. Phase in Fe-C Alloys by Rapid Quenching 447
- Mossbauer Spectroscopy on Amorphous FexNi 80-x B20 after Neutron Irradiation 451
- A New Method for Measurement of Stress in the Neighbourhood of Window Edges in Multiple Layers 455
- X-Ray Debye Temperature of Ytterbium 457
- Relative Hydrogen Content in Plasma-Enhanced CVD Silicon Nitride Films: Substrate Temperature Dependence and Effect of Thermal Annealing 459
- Diffusion of Boron Implanted into Silicon 465
- Interatomic Bond Rupture in the System of Two Coupled Anharmonic Chains with a Weak Interaction 471
- Properties of Sb2Te3 Single Crystals Doped with Tl Atoms 475
- The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique 481
- The Nature of Acceptor Centres in Zinc and Cadmium Diphosphide 485
- On the Nature of Energy Levels in ZnGeP2 491
- Axial ΔM = ±3 and Cubic Δm = ±1 Forbidden Transitions in the EPR Spectrum of Mn 2+ in ZnS 495
- Photoluminescence Spectra of Si-Implanted G2As 499
- Electrical Conductivity of NH4H2PO4 Single Crystal 503
- Peierls Transition and Fluctuation Conductivity in Thin Lead-Phthalocyanine (PbPc) Films 509
- The Effect of Substrate on the Electrical Properties of As2S3 Films 515
- Photoconductivity of Te-Se-Au and Te-Se-Cd Structures 519
- Short-Pulsed Alloying of Contacts onGaAs 525
- Photoelectrochemical Solar Cells with Semiconducting Polymers Prepared by Modification of Polyvinylchloride PVC and Polytetrafluoroethylene PTFE2 529
-
Erratum
- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide 535
- The Interaction between Moving Domain Walls in Rochelle Salt Crystals 537
- Pre-Printed Titles 539