Startseite Potential of Coplanar X-band GaN-MMIC Power Amplifiers
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Potential of Coplanar X-band GaN-MMIC Power Amplifiers

  • Erhan Ersoy EMAIL logo , Serguei Chevtchenko , Paul Kurpas und Wolfgang Heinrich
Veröffentlicht/Copyright: 20. August 2014
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Abstract

While the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.

Received: 2013-9-30
Published Online: 2014-8-20
Published in Print: 2014-9-30

©2014 by Walter de Gruyter Berlin/Boston

Heruntergeladen am 22.9.2025 von https://www.degruyterbrill.com/document/doi/10.1515/freq-2013-0141/html
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