Structural properties for Cu—In—Se thin-films for solar cell applications formed by electrochemical deposition at room temperature were studied using Raman-scattering. Reactions among Cu, In and Se to binary compounds and CuInSe 2 , respectively, were observed. It is concluded that Raman scattering spectroscopy only at low temperature conditions shows the real composition of the electrochemically deposited Cu—In—Se layer. It was also found by Raman spectroscopy that the CuInSe, phase is formed by annealing as-deposited Cu—In—Se thin films preferentially at temperatures around 400°C under selenium vapour pressure.
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Open AccessThiocarbonyl Complexes of Rhenium. Part I.June 2, 2014
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June 2, 2014
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June 2, 2014
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June 2, 2014