We consider an inverse problem which arises in the framework of identification of doping profiles for semiconductor devices, based on current measures for varying voltage. We set formally the inverse problem, and study and discuss the main properties of the resulting problem.
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Requires Authentication UnlicensedInverse doping problems for a P-N junctionLicensed
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Requires Authentication UnlicensedUse of numerical modelling to identify the transfer function and application to the geostatistical procedure in the solution of inverse problems in groundwaterLicensed
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Requires Authentication UnlicensedNewton–Lavrentiev regularization of ill-posed Hammerstein type operator equationLicensed
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Requires Authentication UnlicensedTwo-step regularization methods for linear inverse problemsLicensed
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Requires Authentication UnlicensedTomography problem for the polarized-radiation transfer equationLicensed
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Requires Authentication UnlicensedOptimal control for singular equation with nonsmooth nonlinearityLicensed
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Requires Authentication UnlicensedMonotonicity based imaging methods for elliptic and parabolic inverse problemsLicensed