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Neutron transmutation doping conceptual design

  • M. M. Osman , S. A. Agamy , M. S. Nagy and M. Sultan
Published/Copyright: April 5, 2013
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Abstract

This paper describes and investigates upgrading of the silicon doping facility at the ETRR-2 research reactor to accommodate larger size silicon ingots in the two positions available for irradiation in the thermal column of the reactor. Two methods of irradiation are proposed. Both are based on irradiating two ingots simultaneously in one position. After a certain irradiation time, the silicon ingots are reshuffled inside the irradiation channel. The results obtained show that the proposed irradiation strategies of doping silicon ingots are simple to handle and result in acceptable values of resistivity variation.

Kurzfassung

Die vorliegende Arbeit beschreibt den Ausbau der Silizium-Dotierungsanlage am ETRR-2 Forschungsreaktor um größere Silizium-Ingots an den beiden Stellen aufzunehmen zu können, die für die Bestrahlung in der thermischen Säule des Reaktors zur Verfügung stehen. Für die Bestrahlung werden zwei Methoden vorgeschlagen. Beide basieren auf der Bestrahlung von zwei Ingots simultan in einer Position. Nach einer gewissen Bestrahlungszeit werden die Ingots innerhalb des Bestrahlungskanals umgesetzt. Die Ergebnisse zeigen, dass die vorgeschlagenen Bestrahlungsstrategien zur Dotierung von Silizium-Ingots einfach zu handhaben sind und zu akzeptablen Werten der Widerstandsvariation führen.


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References

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Received: 2009-5-28
Published Online: 2013-04-05
Published in Print: 2010-03-01

© 2010, Carl Hanser Verlag, München

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