Startseite Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range
Artikel Open Access

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

  • A. Voitsekhovskii EMAIL logo , S. Nesmelov und S. Dzyadukh
Veröffentlicht/Copyright: 27. September 2014
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Published Online: 2014-9-27
Published in Print: 2014-12-1

© 2014 SEP, Warsaw

Heruntergeladen am 1.10.2025 von https://www.degruyterbrill.com/document/doi/10.2478/s11772-014-0198-7/html
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