Home Kristallstrukturen und elektronische Eigenschaften von Ge1/3NbS2 und Ge1/4NbS2 / Crystal Structures and Electronic Properties of Ge1/3NbS2 and Ge1/4NbS2
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Kristallstrukturen und elektronische Eigenschaften von Ge1/3NbS2 und Ge1/4NbS2 / Crystal Structures and Electronic Properties of Ge1/3NbS2 and Ge1/4NbS2

  • Regina Pocha and Dirk Johrendt EMAIL logo
Published/Copyright: June 2, 2014
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Single crystals of the intercalation compounds Ge1/3NbS2 andGe1/4NbS2 have been prepared by heating of the elements at 1073 K and by chemical transport with iodine at 923 to 1073 K. Their crystal structures were determined by single crystal X-ray methods.Ge1/3NbS2 (P63/mcm, a=5.767(1), c=13.518(3) Å, Z = 6) crystallizes with a superstructureof 2H-NbS2, characterized by layers of edge-sharing NbS6 trigonal prisms. The Ge atoms in the octahedral voids of the van der Waals gap are sixfold coordinated by sulfur. The NbS2-sublattice of Ge1/4NbS2 (P63/mmc, a = 3.339(1), c = 37.326(7) Å , Z = 6) represents a new 6H-polymorph. Herein, the Ge atoms are located either in the centers of the octahedral voids (c. n. = 6) or shifted from this position along [001] (c. n. = 3 + 3). The unusual electronic state and the bonding situation of germanium in the van der Waal gaps of NbS2 and the metal-metal bonding are studied in detail by using DFT band structure calculations.

Received: 2002-9-2
Published Online: 2014-6-2
Published in Print: 2002-12-1

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