Startseite Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode
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Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

  • Silan Baturay EMAIL logo , Omer Bicer , Serap Yigit Gezgin , Ilhan Candan , Hadice Budak Gumgum und Hamdi Sukur Kilic
Veröffentlicht/Copyright: 27. März 2023
Zeitschrift für Naturforschung A
Aus der Zeitschrift Zeitschrift für Naturforschung A Band 78 Heft 6

Abstract

In this special work, two types of material, which are undoped and Mn doped TiO2 thin films, have been produced by spin coating technique, and then their structural, morphological and optical properties have been measured at different Mn doping rates. Four different doping ratios, undoped, 1, 3 and 5% Mn doped TiO2 have been both experimentally and theoretically investigated and some significant enhancements have been reported. The results of X-ray diffraction (XRD) such as dislocation density, strain, and crystallite size have indicated that undoped, 1, 3 and 5% Mn doped TiO2 thin films had the phase of anatase at 450 °C. It has been observed that the peak intensity of 3% Mn doped TiO2 films has decreased compared to undoped and 1% Mn doped TiO2 while the peak intensity has increased for 5% Mn doped TiO2. The refractive indices and dielectric coefficients of the undoped and Mn doped TiO2 thin films have also been calculated. The undoped and Mn doped TiO2/p-Si heterojunction diodes has exhibited photosensitive behaviour in the illuminated environment. 1% Mn doped TiO2/p-Si heterojunction diode indicated the highest photocurrent. The electrical parameters of all diodes have been calculated and compared to the conventional J–V and Norde methods. Additionally, 1% Mn doped TiO2/p-Si heterojunction diode has been modelled by using the SCAPS-1D program, and J ph values have also been calculated based on the shallow donor density (N D ). The experimental and theoretical J ph values of this diode were found to be compatible with each other.

Keywords: diode; J-V characterization; heterojunction; Mn doped; photocurrent; SCAPS-1D; thin film; TiO2
Corresponding author: Silan Baturay, Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir, Türkiye, E-mail:

Acknowledgements

Authors would kindly like to thank to – Selcuk University, Scientific Research Projects (BAP) Coordination Office for the support with the number 15201070 and 19401140 projects, – Selçuk University, High Technology Research and Application Center (İL-TEK) and – SULTAN Center for infrastructures – Dicle University Scientific Research Project (BAP) Coordination office – Dr. Marc Burgelman’s group, University of Gent, Belgium for providing permission for us to use SCAPS-1D simulation program

  1. Author contributions: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: None declared.

  3. Conflict of interest statement: The authors have no relevant financial or non-financial interests to disclose.

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Supplementary Material

This article contains supplementary material (https://doi.org/10.1515/zna-2023-0015).

Received: 2023-01-21
Accepted: 2023-03-01
Published Online: 2023-03-27
Published in Print: 2023-06-25

© 2023 Walter de Gruyter GmbH, Berlin/Boston

Artikel in diesem Heft

  1. Frontmatter
  2. General
  3. The Standard Model and quantum state reduction from Heim’s field theory
  4. Dynamical Systems & Nonlinear Phenomena
  5. Bifurcation analysis of a discrete type prey-predator model with Michaelis–Menten harvesting in predator
  6. An inspect on rational solutions to the generalized Boussinesq-type equation
  7. Symmetry analysis of the constant acceleration curve equation
  8. Gravitation & Cosmology
  9. The Friedmann–Lemaître–Robertson–Walker metric and the principle of equivalence
  10. Solid State Physics & Materials Science
  11. Differential equations of oscillation of thin plates with point bonding
  12. Synthesis of SnO2 nanoparticles coated ZnO–g–C3N4 composite nanostructures with novel antibacterial activity
  13. Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode
https://doi.org/10.1515/zna-2023-0015
Schlagwörter für diesen Artikel
diode; J-V characterization; heterojunction; Mn doped; photocurrent; SCAPS-1D; thin film; TiO2

Artikel in diesem Heft

  1. Frontmatter
  2. General
  3. The Standard Model and quantum state reduction from Heim’s field theory
  4. Dynamical Systems & Nonlinear Phenomena
  5. Bifurcation analysis of a discrete type prey-predator model with Michaelis–Menten harvesting in predator
  6. An inspect on rational solutions to the generalized Boussinesq-type equation
  7. Symmetry analysis of the constant acceleration curve equation
  8. Gravitation & Cosmology
  9. The Friedmann–Lemaître–Robertson–Walker metric and the principle of equivalence
  10. Solid State Physics & Materials Science
  11. Differential equations of oscillation of thin plates with point bonding
  12. Synthesis of SnO2 nanoparticles coated ZnO–g–C3N4 composite nanostructures with novel antibacterial activity
  13. Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode
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