Abstract
The electronic structure of yttrium trihydride (YH3) under pressure has been explored by using the first-principle calculation. The existence of semiconductor phase of YH3 is predicted at low pressure with symmetry group
1 Introduction
Since the discovery of the topological insulators [3], [4], the topological phases of matter have became one of the most active domains of condensed matter physics. More recently, it was understood that electrons in some gapless materials may emulate various high-energy physics particles such as the massless Weyl and Majorana fermions. Even though these particles have not been found in high-energy experiments yet, they can emerge as a quasiparticle in certain crystals. These condensed matter realizations offer a platform where one can test high energy theories [5]. Besides that, a hallmark of these systems is the linear band dispersion at the band touching points, which leads to unconventional transport and optical phenomena and therefore has great potential in device application [6], [7]. Usually, despite being a gapless metal, many semimetals are characterized by topological invariants, broadening the classification of topological phases of matter beyond insulators. The presence of topological protection often requires certain symmetries. For gapped topological phases, the non-spatial symmetries, namely, time reversal symmetry (
Instead looking at the whole family of gapless phases, it is reasonable to focus on certain special subcategories, for example, the centrosymmetric systems, that is, crystals with space inversion symmetry (
Our main goal is to find a realistic material belonging to class AI of the
From first-principle calculations, we predict that, by imposing a hydrostatic pressure, YH3 can change from a semiconductor at zero pressure to a
Knowing that the structure parameters of YH3 can change under pressure, and there are electron- and pole-like bands near the Fermi level, we want to engineer the band structure of YH3 by implementing hydrostatic pressure. Also noticing that YH3 already has
2 Computation details
The electronic properties and crystal structure of hydrogen hydride can be changed by hydrogenation and pressurization. Driven by the hydrogenations, the concentration x of YHx changes from 2 to 3. At zero pressure, YH3 is predicted to have the energy-favored structure with symmetry group

The unit cell of YH3. The different colors of H atoms indicate three different Wyckoff positions.
The lattice parameters and band structure are obtained by performing the first-principle calculation based on density functional theory (DFT) [29], [30] implemented by the Vienna ab initio simulation package [31], [32] with the projector augmented wave (PAW) method [33], [34]. The hybrid functional HSE06 (25% HF) [35] is used to avoid underestimating the band gap, which correctly reproduced the insulating ground state [25], [26]. Another approach to obtain the correct gapped ground state is by using the DFT + U method [36], [37], [38], [39] to include the effects of orbital-dependent exchange and Coulomb interactions between the electrons. To simplify the calculation, the exchange correction J is fixed at 0.5 eV. Thus, the Hubbard corrections Ueff = U − J = 3.5 eV are added in the d-orbital for Y atom by the linear-response approach [40], [41]. This leads to similar results as for HSE06; the only difference is that the maximum band crossing happens at 16 GPa for DFT + U, rather than 18 GPa for HSE06. The detailed comparison of PBE [42], HSE06 and DFT + U can be found in the supplementary material[43]. The kinetic energy cutoff, which determines the whole set plane waves with small energy included in the basis set, has been chosen to be Ecut = 450 eV. The SOC is very weak and can be safely ignored because of the lightness of Y and H atoms [2]. We have double-checked this fact and showed the results in Figure 3, where the band structure with and without SOC are almost the same. The reciprocal space sampling was performed using 9 × 9 × 9 Monkhorst-Pack meshes [44]. Optimization of structural parameters was achieved by a minimization of atomic forces and stress tensors applying the conjugate gradient technique, where the lattice parameters and the position of all atoms are also relaxed when the pressure is turned on. At zero pressure, the structure parameters are given by
3 Results and discussion
3.1 The band structure and the pressure effect
The comparison of band structure at 0 and 18 GPa are plotted in Figure 2. The system is gapped at zero pressure but transits into a metallic phase at 18 GPa. More detailed calculation shows that the hydrostatic pressure will drive the electron- and hole-like band toward each other and the two bands overlapped at about 10 GPa. If we continue increasing the pressure, the electron- and hole-like band start separating from each other at about 18 GPa, and the band structure will be gapped again when the pressure is larger than 24 GPa. This process is described in Figure 4. One can see that, in the range of 10–24 GPa, the minimal of the hole-like band is larger than the maximal of the electron-like band, indicating that these two bands are overlapped and result in the accidental band degeneracies [46]. This is the semimetal phase we are interested in. Because the nodal structures are essentially the same at any pressure in the range of 10–24 GPa, without loss of generality, we choose 18 GPa as an example to analyze the nodal line structure and the associated surface state.

The band structure of YH3 at 0 and 18 GPa, respectively. The inset is an enlarged plot of band structure along Γ–A line. The small band gap indicates that the nodal line is not intersecting with the Γ–A line but rather very close to it.

The band structure is calculated by using HSE06 functional with and without SOC turned on.

The maximal of the hole-like band and the minimal of the electron-like band evolve with pressure changing.
The structure of band crossings can be readily analyzed if one knows the Hamiltonian. It can be generated numerically by using the maximally localized Wannier functions (MLWFs) implemented by the Wannier90 package [47]. Then one can use the WannierTools package [48] to analyze the Hamiltonian. The first advantage to having this numerical tight-binding Hamiltonian is to locate the band-crossing points, by using WannierTools, one can search for the nodes by comparing the lowest unoccupied conducting band (LUCB) and the highest occupied valence band (HOVB) within a small range of tolerable error, that is, the nodes can be defined as the k-points satisfying ELUCB(k) − EHOV B(k) < Eerror. In Figure 5a, with Eerror = 0.005 eV, the scatter plot of the nodes indicates a closed ring surrounding the Γ point. Intriguingly, this kind of snake-like nodal line has also been found in various alkaline-earth compounds [27].

(a) The left picture shows the scatter plot of the nodes in the BZ. The dashed purple line indicates the path where we calculate the Berry’s phase. The right picture is the enlarged version of the nodal ring. (b) and (c) calculated nodal line based on the effective Hamiltonian (3), (4) and (5). In b, the red ellipsoid represents the surface c(k) = 0 and the cyan surface represents b(k) = 0. (c) is the intersection.
Now we should explain that our result does not agree with the earlier studies [1], [2], where the time reversal symmetry is ignored and the authors suggest that the nodal line is protected by the crystalline symmetry only. Especially, in the study by Wang et al [2], the authors argue that, because of the inversion symmetry and two mirror symmetries of SG.165, the local Hamiltonian could have band crossings located at the mirror plane where the two bands near Fermi level have opposite eigenvalues of the mirror symmetry. However, we should notice that, the band crossings are actually not pinned on the Γ point or any other high symmetric lines or planes. Therefore, even if the band crossings are protected by any symmetries, they are most likely not the crystalline symmetries. The only exact symmetry exists everywhere in BZ is the combined time reversal and space inversion symmetry
Moreover, based on the tight-binding model constructed with MLWFs and surface Green function methods, we can obtain the surface states of YH3 at 18 GPa without SOC. As shown in Figure 6, in the ⟨001⟩ direction, there exists a bright curve connecting two band touching points. This signature can be used to identify the particular semimetal state of YH3 from angle-resolved photoemission spectroscopy (ARPES) measurements.

The surface band structure and Fermi surface at 18 GPa: (a, c) for (001) surface and (b, d) for (010) surface, where the color indicates the density of state. Note that there is a bright curve that connects the nodal points across the boundary of BZ.
3.2 Majorana modes near band crossings
The combination of time reversal and space inversion symmetry
Notice that these two symmetries acting globally on the BZ, in a sense that they relate Hamiltonians at different k-points. On the other hand, the combination of the two symmetries is local, meaning
which is a symmetry for every Hamiltonian at any k-point in the BZ. For spinless systems,
where
Other crystalline symmetries, such as the C3 rotations about the kz axis and the C2 rotations about the Γ–K line, will not protect the nodal line but rather define the shape of it. Because the nodal line is very close to the center of the BZ, we can use these crystalline symmetries to further fix the two functions b(k) and c(k) up to O(k3). To do so, we need to figure out the representations of C3 and C2 in the two-dimensional Hilbert space of the two-band system. This can be done by calculating the band representations accordingly [50], [51], which are listed in Table 1. The two bands near the Fermi level, which form the band touchings, have exactly the opposite eigenvalues of C3 and C2 rotations. Therefore, the relevant symmetric operations can be represented by
The irreducible band representations near the Fermi level.
| Bands | M | Γ | A | H | K | L |
|---|---|---|---|---|---|---|
| HOVB+5 | A1A2 (4) | H3H3(4) | K1 | L1 (2) | ||
| HOVB+4 | K3 (2) | |||||
| HOVB+3 | L1 (2) | |||||
| HOVB+2 | K3 (2) | |||||
| HOVB+1 | A3 (2) | H1H2(2) | L1 (2) | |||
| HOVB | K1 | |||||
| Fermi surface | ||||||
| LUCB | A3 (2) | H3H3(4) | K3 (2) | L1 (2) | ||
| LUCB-1 | ||||||
| LUCB-2 | A3 (2) | K2 | L1 (2) | |||
| LUCB-3 | K3 (2) | |||||
LUCB, lowest unoccupied conducting band; HOVB, highest occupied valence band.
The numbers in the parentheses denote the degeneracy of the bands.
The nodal line is the intersection of the two surfaces b(k) = 0 and c(k) = 0. This can be illustrated schematically in Figure 5b and c. Note that the shape of the nodal line is the same as in Figure 5a obtained from the first-principle calculation.
To simplify things a little bit, we can remove
Because the nodal ring is a 1D line embedded in a 3D space, one can always choose a locally orthogonal coordinate system inherited from the 3D space. Without loss of generality, we can choose the three axis to p1, p2, p3 and define
where
On the other hand, the 3D massless Dirac equation is given by
where c is the speed of light. In 3D, the γ matrices can also be represented by Dirac matrices [53]:
Hence, the Hamiltonian for the massless Dirac equation in 3D is given by
Comparing with the local Hamiltonian (7) at the band crossings, with the replacement
2.3 Two topological invariants of IT -protected nodal line
To define the topological invariants more precisely, we need to clarify the mathematical data we are looking at, which is the Hilbert space attached to each k-points in the BZ. As a consequence of
Simply speaking, one can start with the flattened gapped Hamiltonian
where M(N) denotes the number of unoccupied (occupied) bands. The group of such topologically distinct mappings is given by the homotopy groups [49]
where d is the dimension of a closed submanifold in the BZ. Note that the d dimensional submanifold cannot be chosen arbitrarily. It must not intersect with the nodal line but enclose it. This is because the mappings (11) are not well defined at the band-crossing points. For example, like the Dirac semimetal, a point-like node can only be surrounded by a two-dimensional sphere
In fact, this is the same as the reduced orthogonal K group
As for a nodal line, there are two choices of the submanifold: one is an 1D closed path interlocked with the nodal ring, as denoted by the purple line in Figure 5a; the other is a 2D closed surface surrounding the nodal ring, which may be a sphere or a torus. It turns out that the difference between torus and sphere does not matter for defining the topological invariants [28]. Therefore, the system (3) can be classified by two distinct topological charges
These two abstract definitions is good for organized thinking but not for calculation. Before setting about the numerical calculation, we need to clarify some subtleties first for
where the summation is for the occupied bands. Then the one-dimensional
The problem for a
However, as discussed by Fang et al [11], the topological charge c1 cannot prohibit the nodal line from shrinking to a point and disappearing. We still need to check the second topological invariant
where γ1 is the nodal ring at the Fermi level and
4 Conclusion and outlook
By using the first-principle calculation, we have studied the electronic structure of YH3 under hydrostatic pressure in the range 0–30 GPa. At zero pressure, the YH3 is gapped. By increasing the hydrostatic pressure, we find that YH3 undergoes a pressure-induced semiconductor-semimetal transition at about 10 GPa. In the range of 10–24 GPa, there are electron- and hole-like bands overlapped and result in accidental band degeneracies at the Fermi level. The band crossings turn out to be an
Our results also suggest that pressure effect may play an important role in searching for topological semimetals. Especially for centrosymmetric systems in the category of
Funding source: Shanxi Provincial Education Department
Award Identifier / Grant number: 20JK0685
Funding source: Natural Science Basic Research Plan in Shanxi Province of China
Award Identifier / Grant number: 2020JQ-804
Acknowledgments
This work is supported in part by the Scientific Research Program No. 20JK0685 funded by Shanxi Provincial Education Department and the Scientific Research Program No. 2020JQ-804 funded by Natural Science Basic Research Plan in Shanxi Province of China. The authors thank Prof. Shao-Yi Wu of University of Electronic Science and Technology of China for his help in VASP calculations.
Author contribution: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.
Research funding: This work is supported in part by the Scientific Research Program No. 20JK0685 funded by Shanxi Provincial Education Department and the Scientific Research Program No. 2020JQ-804 funded by Natural Science Basic Research Plan in Shanxi Province of China.
Conflict of interest statement: The authors declare no conflicts of interest regarding this article.
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Supplementary material
Supplementary material to this article can be found online at (https://doi.org/10.1515/zna-2020-0149).
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