Home An improved method for monitoring the junction temperature of 1200V / 50A IGBT modules used in power conversion systems
Article
Licensed
Unlicensed Requires Authentication

An improved method for monitoring the junction temperature of 1200V / 50A IGBT modules used in power conversion systems

  • Badredine Lamuadni ORCID logo EMAIL logo , Elhoussaine Ouabida , Mounia Malki , Driss Zejli and Rachid El Bouayadi
Published/Copyright: September 20, 2023

Abstract

Insulated gate bipolar transistor (IGBT) is one of the most used devices for high-power-density and high-voltage applications such as wind turbines, electric vehicles, and smart grids. However, the field of IGBT research is still in its infancy owing to the failures that can happen to the module due to its temperature rise. Hence, the junction temperature T j measurement of the active region is essential for analyzing and predicting the degradation state of the IGBT device. In this paper, an overall study, including uses of the governing thermal equation to estimate the junction temperature T j, experimental analysis of the IGBT component during operation, and a numerical finite element (FE) study, was conducted. The thermal management FE model is conducted to predict temperature variation along time and heat spreading inside the IGBT layers. To investigate the material’s properties and structure change during operation impacting the junction temperature, scanning electron microscopy (SEM) and energy X-ray dispersive spectroscopy (EDS) were performed on the IGBT power module. Results were used to interpret the difference between the experimental and the predicted temperature values. For effectiveness validation purposes, results obtained from the proposed FE model are compared with the results of the experimental thermo-sensitive electrical parameters (TSEP) method. Good agreement was found between the experiment and the proposed FE model.


Corresponding author: Badredine Lamuadni, Advanced Systems Engineering Laboratory, Department of Electrical Engineering, Networks and Telecommunication Systems, National School of Applied Sciences, Ibn Tofail University, Kenitra, Morocco, E-mail:

  1. Research ethics: Not applicable.

  2. Author contributions: The authors have accepted responsibility for the entire content of this manuscript and approved its submission. The authors contributed equally to the manuscript.

  3. Competing interests: The authors state no conflict of interest.

  4. Research funding: None declared.

  5. Data availability: The raw data can be obtained on request from the corresponding author.

References

1. Iwamuro, N, Laska, T. IGBT history, state-of-the-art, and future prospects. IEEE Trans Electron Dev 2017;64:741–52. https://doi.org/10.1109/TED.2017.2654599.Search in Google Scholar

2. Zhu, C, Andrei, P. Analytical estimation of breakdown voltage in insulated-gate bipolar transistors. J Comput Electron 2021;20:1202–8. https://doi.org/10.1007/s10825-021-01691-x.Search in Google Scholar

3. Manuel, R, Velasquez, A. Root cause analysis for inverters in solar photo-voltaic plants. Eng Fail Anal 2020;118:104856. https://doi.org/10.1016/j.engfailanal.2020.104856.Search in Google Scholar

4. Moosavi, SS, Kazemi, A, Akbari, H. A comparison of various open-circuit fault detection methods in the IGBT-based DC/AC inverter used in electric vehicle. Eng Fail Anal 2019;96:223–35. https://doi.org/10.1016/j.engfailanal.2018.09.020.Search in Google Scholar

5. Nguyen, B, Chao, PC. A switch module stacked by a 4 x 3 IGBT array with balanced voltage sharing for PEF applications. Microsyst Technol 2021;27:2407–18. https://doi.org/10.1007/s00542-020-05139-3.Search in Google Scholar

6. Jo, HR, Lee, KB. Analysis of lifetime estimation on the DC-link capacitor in three-level hybrid ANPC inverters under fault-tolerance control. J Electr Eng Technol 2022;17:1705–14. https://doi.org/10.1007/s42835-021-00992-2.Search in Google Scholar

7. Kim, SY, Jo, HR, Cho, S, Lee, KB. Estimation of junction temperature in a two-level insulated-gate bipolar transistor inverter for motor drives. J Electr Eng Technol 2022;17:1111–19. https://doi.org/10.1007/s42835-021-00934-y.Search in Google Scholar

8. Liu, L, Du, C, Peng, Q, Chen, J, Wang, Y, Chen, Y, et al.. An investigation on IGBT junction temperature estimation using online regression method. Microelectron Reliab 2021;124:114321. https://doi.org/10.1016/j.microrel.2021.114321.Search in Google Scholar

9. Ma, M, Yan, X, Guo, W, Yang, S, Cai, G, Chen, W. Online junction temperature estimation using integrated NTC thermistor in IGBT modules for PMSM drives. Microelectron Reliab 2020;114:113836. https://doi.org/10.1016/j.microrel.2020.113836.Search in Google Scholar

10. Wang, D, Wright, M, Elumalai, NK, Uddin, A. Stability of perovskite solar cells. Sol Energy Mater Sol Cells 2016;147:255–75. https://doi.org/10.1016/j.solmat.2015.12.025.Search in Google Scholar

11. Ciappa, M. Selected failure mechanisms of modern power modules. Microelectron Reliab 2002;42:653–67. https://doi.org/10.1016/s0026-2714(02)00042-2.Search in Google Scholar

12. An, N, Du, M, Hu, Z, Wei, K. A high-precision adaptive thermal network model for monitoring of temperature variations in insulated gate bipolar transistor (IGBT) modules. Energies 2018;11:595. https://doi.org/10.3390/en11030595.Search in Google Scholar

13. Ye, H, Lin, M, Basaran, C. Failure modes and FEM analysis of power electronic packaging. Finite Elem Anal Des 2002;38:601–12. https://doi.org/10.1016/s0168-874x(01)00094-4.Search in Google Scholar

14. Herold, C, Franke, J, Bhojani, R, Schleicher, A, Lutz, J. Methods for virtual junction temperature measurement respecting internal semiconductor processes. In: IEEE 27th int. symp. power semicond. devices IC’s; 2015.10.1109/ISPSD.2015.7123455Search in Google Scholar

15. Lamuadni, B, El Bouayadi, R, Amine, A, Zejli, D. Design and development of a measurement system dedicated to estimate the junction temperature of insulated gate bipolar transistor modules. Int J Eng Res Afr 2022;60:89–106. https://doi.org/10.4028/p-z9wh2k.Search in Google Scholar

16. Blackburn, DL. A review of thermal characterization of power transistors. In: Semicond. therm. temp. meas. symp. 1988. SEMI-THERM IV., fourth annu. IEEE; 1988:1–7 pp.10.1109/SEMTHE.1988.10589Search in Google Scholar

17. Blackburn, D. Temperature measurements of semiconductor devices - a review. In: Twent. annu. IEEE semicond. therm. meas. manag. symp.; 2004:70–80 pp.10.1109/STHERM.2004.1291304Search in Google Scholar

18. Blackburn, DL. An electrical technique for the measurement of the peak junction temperature of power transistors. In: IEEE 13th int. reliab. phys. symp. Las Vegas, NV, USA, 1975:142–50 pp.10.1109/IRPS.1975.362688Search in Google Scholar

19. Rashed, A, Forest, PEF, Huselstein, JJ, Martiré, T. On-line [ T J , V ce ] monitoring of IGBTs stressed by fast power cycling tests. In: Power electron. appl. (EPE), 2013 15th eur. conf.; 2013.Search in Google Scholar

20. Schweitzer, D, Pape, H, Chen, L, Kutscherauer, R, Walder, M. Transient dual interface measurement — A new JEDEC standard for the measurement of the junction-to-case thermal resistance. In: 2011 27th Annual IEEE semiconductor thermal measurement and management symposium. San Jose, CA, USA; 2011:222–9 pp.10.1109/STHERM.2011.5767204Search in Google Scholar

21. Lutz, J, Schlangenotto, H, Scheuermann, U, De Doncker, R. Packaging and reliability of power devices. Berlin, Heidelberg: Springer; 2010.10.1007/978-3-642-11125-9_11Search in Google Scholar

Received: 2023-04-27
Accepted: 2023-08-18
Published Online: 2023-09-20

© 2023 Walter de Gruyter GmbH, Berlin/Boston

Downloaded on 19.9.2025 from https://www.degruyterbrill.com/document/doi/10.1515/ijeeps-2023-0142/html
Scroll to top button