Towards a fully integrated sub-THz microfluidic sensor platform for dielectric spectroscopy

References

[1] H. Fricke, “A mathemathical treatment of the electric conductivity and capacity of disperse systems. I. The electric conductivity of a suspension of homogenous spheroids,” Phys. Rev., vol. 24, pp. 575–587, 1924, https://doi.org/10.1103/physrev.24.575.Search in Google Scholar

[2] K. S. Cole and R. H. Cole, “Dispersion and absorption in dielectrics. I. Alternating current characteristics,” J. Chem. Phys., vol. 9, no. 4, pp. 341–351, 1941, https://doi.org/10.1063/1.1750906.Search in Google Scholar

[3] D. Kissinger, G. Kahmen, and R. Weigel, “Millimeter-wave and terahertz transceivers in SiGe BiCMOS technologies,” IEEE Trans. Microw. Theor. Tech., vol. 69, no. 10, pp. 4541–4560, 2021, https://doi.org/10.1109/tmtt.2021.3095235.Search in Google Scholar

[4] K. Schmalz, N. Rothbart, P. F.-X. Neumaier, J. Borngräber, H.-W. Hübers, and D. Kissinger, “Gas spectroscopy system for breath analysis at mm-wave/THz using SiGe BiCMOS circuits,” IEEE Trans. Microw. Theor. Tech., vol. 65, no. 5, pp. 1807–1818, 2017. https://doi.org/10.1109/tmtt.2017.2650915.Search in Google Scholar

[5] F. Artis, T. Chen, T. Chretiennot, et al., “Microwaving biological cells,” IEEE Microw. Mag., vol. 16, no. 4, pp. 87–96, 2015. https://doi.org/10.1109/mmm.2015.2393997.Search in Google Scholar

[6] P. Hillger, J. Grzyb, R. Jain, and U. R. Pfeiffer, “Terahertz imaging and sensing application with silicon-based technologies,” IEEE Trans. Terahertz Sci. Technol., vol. 9, no. 1, pp. 1–19, 2019, https://doi.org/10.1109/tthz.2018.2884852.Search in Google Scholar

[7] G. M. Whitesides, “The origins and the future of microfluidics,” Nature, vol. 442, no. 7101, pp. 368–373, 2006, https://doi.org/10.1038/nature05058.Search in Google Scholar PubMed

[8] D. C. Duffy, J. C. McDonald, O. J. A. Schueller, and G. M. Whitesides, “Rapid prototyping of microfluidic systems in poly(dimethylsiloxane),” Anal. Chem., vol. 70, no. 23, pp. 4974–4984, 1998, https://doi.org/10.1021/ac980656z.Search in Google Scholar PubMed

[9] C. Iliescu, H. Taylor, M. Avram, J. Miao, and S. Franssila, “A practical guide for the fabrication of microfluidic devices using glass and silicon,” Biomicrofluidics, vol. 6, no. 1, pp. 16505-01–16505-16, 2012. https://doi.org/10.1063/1.3689939.Search in Google Scholar PubMed PubMed Central

[10] R. M. Tiggelaar, “Fabrication of a high-temperature microreactor with integrated heater and sensor patterns on an ultrathin silicon membrane,” Sensor Actuator Phys., vol. 119, no. 1, pp. 196–205, 2005, https://doi.org/10.1016/j.sna.2004.09.004.Search in Google Scholar

[11] Y. Huang and A. J. Mason, “Lab-on-CMOS integration of microfluidics and electrochemical sensors,” Lab Chip, vol. 13, no. 19, pp. 3929–3934, 2013, https://doi.org/10.1039/c3lc50437a.Search in Google Scholar PubMed PubMed Central

[12] N. M. Salih, N. Nafarizal, C. F. Soon, M. Z. Sahdan, A. Tijjani, and U. Hashim, “Glass etching for cost-effective microchannels fabrication,” in 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 2014, pp. 432–435.10.1109/SMELEC.2014.6920890Search in Google Scholar

[13] Z. K. Wang, M. H. Lim, D. M. Lian, and H. Y. Zheng, “Computational profiling of laser processing glass substrate for microchannel fabrication,” in International Conference on Computational Problem-Solving, 2010, pp. 55–58.Search in Google Scholar

[14] L. L. Wu, S. Babikian, G.-P. Li, and M. Bachman, “Microfluidic printed circuit boards,” in 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 2011, pp. 1576–1581.10.1109/ECTC.2011.5898721Search in Google Scholar

[15] P. Kassanos, F. Seichepine, I. Kassanos, and G.-Z. Yang, “Development and characterization of a PCB-based microfluidic Y-channel,” in 2020 42nd Annual International Conference of the IEEE Engineering in Medicine Biology Society (EMBC), 2020, pp. 5037–5040.10.1109/EMBC44109.2020.9176657Search in Google Scholar PubMed

[16] J. T. W. Kuo, L. Yu, and E. Meng, “Micromachined thermal flow sensors—a review,” Micromachines, vol. 3, no. 3, pp. 550–573, 2012, https://doi.org/10.3390/mi3030550.Search in Google Scholar

[17] N. T. Nguyen, “Micromachined flow sensors—a review,” Flow Meas. Instrum., vol. 8, no. 1, pp. 7–16, 1997, https://doi.org/10.1016/s0955-5986(97)00019-8.Search in Google Scholar

[18] A. Gomez-Torrent and J. Oberhammer, “Micromachined waveguide interposer for the characterization of multi-port sub-THz devices,” J. Infrared, Millim. Terahertz Waves, vol. 41, no. 3, pp. 245–257, 2020, https://doi.org/10.1007/s10762-019-00663-4.Search in Google Scholar

[19] R. C. Li, RF Circuit Design, Hoboken, NJ, USA, Wiley, 2012.10.1002/9781118309940Search in Google Scholar

[20] D. Wang, K. Schmalz, M. H. Eissa, et al., “Homodyne and heterodyne terahertz dielectric sensors: prototyping and comparison in BiCMOS technology for lab-on-chip applications,” in Proc. IEEE Int. Microw. Biomed. Conf. (IMBioC), Philadelphia, PA, USA, IEEE, 2018, pp. 4–6.10.1109/IMBIOC.2018.8428934Search in Google Scholar

[21] V. Lammert, C. Heine, J. Wessel, et al., “A K-Band complex permittivity sensor for biomedical application in 130-nm SiGe BiCMOS,” IEEE Trans. Circuits Syst. II, vol. 66, no. 10, pp. 1628–1632, 2019. https://doi.org/10.1109/tcsii.2019.2921199.Search in Google Scholar

[22] F. I. Jamal, S. Gulha, M. H. Eissa, J. Wessel, and D. Kissinger, “A fully integrated low-power 30 GHz complex dielectric sensor in a 0.25-µm BiCMOS technology,” IEEE J. Electromagn. RF Microw. Med. Biol., vol. 2, no. 3, pp. 163–171, 2018, https://doi.org/10.1109/jerm.2018.2835656.Search in Google Scholar

[23] F. I. Jamal, S. Gulha, M. H. Eissa, D. Kissinger, and J. Wessel, “A low-power 30 GHz complex dielectric chem-bio-sensor in a SiGe BiCMOS technology,” in Proc. IEEE MTT-S IMBIOC, Gothenburg, Schweden, IEEE, 2017, pp. 1–4.10.1109/IMBIOC.2017.7965787Search in Google Scholar

[24] F. I. Jamal, S. Guha, M. H. Eissa, et al., “Low-power miniature K-band sensors for dielectric characterization of biomaterials,” IEEE Trans. Microw. Theor. Tech., vol. 65, no. 3, pp. 1012–1023, 2017. https://doi.org/10.1109/tmtt.2016.2633350.Search in Google Scholar

[25] M. Hofmann, G. Fischer, R. Weigel, and D. Kissinger, “Microwave-based noninvasive concentration measurements for biomedical applications,” IEEE Trans. Microw. Theor. Tech., vol. 61, no. 5, pp. 2195–2204, 2013, https://doi.org/10.1109/tmtt.2013.2250516.Search in Google Scholar

[26] I. Nasr, H. Knapp, K. Aufinger, R. Weigel, and D. Kissinger, “A 50–100-GHz highly integrated octave-bandwidth transmitter and receiver chipset in 0.35 μm SiGe technology,” IEEE Trans. Microw. Theor. Tech., vol. 62, no. 9, pp. 2118–2131, 2014. https://doi.org/10.1109/TMTT.2014.2337289.Search in Google Scholar

[27] B. Laemmle, “A 125-GHz permittivity sensor with read-out circuit in a 250-nm SiGe BiCMOS technology,” IEEE Trans. Microw. Theor. Tech., vol. 61, no. 5, pp. 2185–2194, 2013, https://doi.org/10.1109/tmtt.2013.2253792.Search in Google Scholar

[28] D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe, and D. Kissinger, “240-GHz reflectometer-based dielectric sensor with integrated transducers in a 130-nm SiGe BiCMOS technology,” IEEE Trans. Microw. Theor. Tech., vol. 69, no. 1, pp. 1027–1035, 2021. https://doi.org/10.1109/tmtt.2020.3038382.Search in Google Scholar

[29] D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe, and D. Kissinger, “Integrated 240-GHz dielectric sensor with DC readout circuit in a 130-nm SiGe BiCMOS technology,” IEEE Trans. Microw. Theor. Tech., vol. 66, no. 9, pp. 4232–4241, 2018. https://doi.org/10.1109/tmtt.2018.2839104.Search in Google Scholar

[30] D. Wang, M. H. Eissa, K. Schmalz, et al., “240-GHz four-channel power-tuning heterodyne sensing readout system with reflection and transmission measurements in a 130-nm SiGe BiCMOS technology,” IEEE Trans. Microw. Theor. Tech., vol. 67, no. 12, pp. 5296–5306, 2019. https://doi.org/10.1109/tmtt.2019.2949820.Search in Google Scholar

[31] J. Nehring, M. Dietz, K. Aufinger, G. Fischer, R. Weigel, and D. Kissinger, “A 4–32-GHz chipset for a highly integrated heterodyne two-port vector network analyzer,” IEEE Trans. Microw. Theor. Tech., vol. 64, no. 3, pp. 892–905, 2016.10.1109/TMTT.2016.2520483Search in Google Scholar

[32] J. Nehring, M. Schütz, M. Dietz, et al., “Highly integrated 4-32-GHz two-port vector network analyzers for instrumentation and biomedical application,” IEEE Trans. Microw. Theor. Tech., vol. 65, no. 1, pp. 229–244, 2017. https://doi.org/10.1109/tmtt.2016.2616873.Search in Google Scholar

[33] I. Nasr, J. Nehring, K. Aufinger, G. Fischer, R. Weigel, and D. Kissinger, “Single-and dual-port 50-100-GHz integrated vector network analyzers with on-chip dielectric sensors,” IEEE Trans. Microw. Theor. Tech., vol. 62, no. 9, pp. 2168–2179, 2014, https://doi.org/10.1109/tmtt.2014.2337264.Search in Google Scholar

[34] H. Chung, Q. Ma, M. Sayginer, and G. M. Rebeiz, “A Packaged 0.01-26-GHz single-chip SiGe reflectometer for two-port vector network analyzers,” IEEE Trans. Microw. Theor. Tech., vol. 68, no. 5, pp. 1794–1808, 2020, https://doi.org/10.1109/tmtt.2019.2961901.Search in Google Scholar

[35] E. Turkmen and Y. Gurbuz, “A SiGe BiCMOS W-band single-chip frequency extension module for VNAs,” IEEE Trans. Microw. Theor. Tech., vol. 68, no. 1, pp. 211–221, 2020, https://doi.org/10.1109/tmtt.2019.2948331.Search in Google Scholar

[36] D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe, and D. Kissinger, “480-GHz sensor with subharmonic mixer and integrated transducer in a 130-nm SiGe BiCMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 30, no. 9, pp. 908–911, 2020. https://doi.org/10.1109/lmwc.2020.3013317.Search in Google Scholar

[37] A. Güner, T. Mausolf, J. Wessel, D. Kissinger, and K. Schmalz, “A 440-540-GHz subharmonic mixer in 130-nm SiGe BiCMOS,” IEEE Microw. Wireless Compon. Lett., vol. 30, no. 12, pp. 1161–1164, 2020. https://doi.org/10.1109/lmwc.2020.3030315.Search in Google Scholar

[38] A. Güner, T. Mausolf, J. Wessel, D. Kissinger, and K. Schmalz, “A 440-540 GHz transmitter in 130 nm SiGe BiCMOS,” IEEE Microw. Wireless Compon. Lett., vol. 31, no. 6, pp. 779–782, 2021. https://doi.org/10.1109/lmwc.2021.3060820.Search in Google Scholar

[39] M. Hiebel, Fundamentals of Vector Network Analysis, Munich, Germany, Rohde and Schwarz, 2016.Search in Google Scholar

[40] A. Ulusoy, P. Song, R. L. Schmid, et al.., “A low-loss and high isolation D-band SPDT switch utilizing deep-saturation SiGe HBTs,” IEEE Microw. Wireless Compon. Lett., vol. 62, no. 11, pp. 2755–2767, 2014.10.1109/TMTT.2014.2354017Search in Google Scholar

[41] M. Inac, M. Wietstruck, A. Göritz, et al.., “BiCMOS integrated microfluidic packaging by wafer bonding for lab-on-chip applications,” in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 2017, pp. 786–791.10.1109/ECTC.2017.153Search in Google Scholar

[42] B. Yu, Z. Gan, J. Xu, and S. Liu, “The study of a microchannel integrated gas flow sensor,” Chin. J. Electron., vol. 18, pp. 435–438, 2009.Search in Google Scholar