Abstract
In this work, we demonstrate a ground plane (GP) based Selective Buried Oxide (SELBOX) Junctionless Transistor (JLT), named as GP-SELBOX-JLT. The use of GP and SELBOX in the proposed device reduces the electric field and enhances volume depletion in the channel, hence improves I ON/I OFF ratio and scalability. Using calibrated 2-D simulation, we have shown that proposed device exhibits better Short Channel Effect (SHE) immunity as compared to SOI-JLT. Therefore, the proposed GP-SELBOX-JLT can be scaled without degrading the performance in sub 20 nm regime. In addition, the ac study has shown that the cutoff frequency (f T) of GP-SELBOX-JLT is almost equal to conventional SOI-JLT.
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Author contributions: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.
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Research funding: None declared.
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Conflict of interest statement: The authors declare no conflicts of interest regarding this article.
References
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Articles in the same Issue
- Frontmatter
- Research Articles
- Ground plane and selective buried oxide based planar junctionless transistor
- Ultra wideband bandpass filters with specified relative bandwidth
- Reconfigurable bandstop filter using active frequency selective surface, design and fabrication
- 60 GHz beam-tilting coplanar slotted SIW antenna array
- Circularly polarized CPW fed MIMO/Diversity antenna for Wi-Fi and WLAN applications
- A wideband 4-port MIMO antenna supporting sub-6 GHz spectrum for 5G mobile terminals
- An octagonal ultra-wideband double slit antenna for WiMAX and WLAN rejection
- A wideband metamaterial cross polarizer conversion for C and X band applications
- Numerical modeling of electromagnetic scattering from complex shape object with coating
- An efficient adaptive modulation technique over realistic wireless communication channels based on distance and SINR
- Performance analysis of hybrid Fi-Wi network employing OCDMA based NG-PON
- Dependence of specific absorption rate and its distribution inside a homogeneous fruit model on frequency, angle of incidence, and wave polarization