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Improved Thermal Stability of RF Power BJT with Ballast Circuits
-
Benqing Guo
and
Qingzhong Zhang
Published/Copyright:
October 25, 2013
Abstract
To improve thermal stability and relieve current convergence in rf power bjts, an embedded active CMOS ballast circuit is proposed. By detecting the inhomogeneous temperature through distributed temperature sensors, the adjacent ballast circuit is triggered to shunt the base convergence current of the power BJT cell, performing the ballast protection for the device. Simulations and measurements validate the effectiveness of the proposed ballast circuit. Compared to conventional ballast resistor methods, the improved device integrated with ballast circuits exhibits superior electrical performance. The single ballast circuit only consumes 6.5 mW with additional occupied area of 2530 um2.
Received: 2012-12-4
Published Online: 2013-10-25
Published in Print: 2013-12-1
©[2013] by Walter de Gruyter Berlin Boston
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Articles in the same Issue
- Masthead
- Broadband Circularly Polarized Microstrip Antenna Using L-Shaped Probe and H-shaped Aperture-Coupling
- Broadband Circularly Polarized Cavity Backed Slot Antenna Array with Broadband Sequential Rotation Feed
- A Generalized Circuit Model for High Directivity Coupler Using Mu-Negative Transmission Lines
- A 0.6-V 5.2 GHz Folded Cascode LNA with Transformer-feedback Technique for Ultra Low Power Applications
- Improved Thermal Stability of RF Power BJT with Ballast Circuits
- Adaptive Power Allocation for Effective Capacity of TAS-MRC Systems
- Outage Probability of Interference-limited Switch and Stay Diversity System over Gamma Shadowed Nakagami-m Fading Channels
- Average Fade Duration of Dual Selection Diversity over Correlated Unbalanced Nakagami-m Fading Channels in the Presence of Cochannel Interference
- Performance Analysis of Cooperative ARQ Scheme with Co-channel Interference
- An Improved Adaptive Tracking Algorithm based on Iteration and Discriminator Optimization for Burst DSSS Signals
