AlGaInAs MOVPE selective area growth for photonic integrated circuits
-
Jean Decobert
Jean Decobert has been working on III-V epitaxial growth by MOVPE since he started his Master’s degree in Materials Sciences in 1987. After receiving his PhD in Electronics from the University of Lille in 1993, he joined the National Center of Telecommunication Research (CNET) in France. In 2004, he became a research engineer at the III-V Lab (the joint laboratory founded by Alcatel-Lucent and Thales R&T in 2004 and including CEA-Leti since 2011), where he is currently in charge of III-V active material growth by MOVPE for opto-electronic applications. His research activities mainly involve advanced Electroabsorbtion Modulator-Lasers (EML), Avalanche Photo-Diodes (APD) for Photonic Integrated Circuits (PIC), and p-i-n photodiodes for SWIR imaging. Actually, he is currently working on the Selective Area Growth (SAG) technique, the advanced technology platform for optoelectronic device integration.
,
Guillaume Binet
Guillaume Binet was born in Paris, France on March 23, 1990. He received the MS in optoelectronics in 2013 from the Grenoble Institute of Technology and the MA in innovation and entrepreneurship from the Institute of Political Studies in Grenoble in 2014. He is currently working toward a PhD at the III-V lab in Marcoussis and the Pierre and Marie Curie University in Paris, focused on the development of photonic integrated circuits (PIC) by selective area growth (SAG) for optical telecommunications in the 1.3 mm band.
Alvaro Diego Bernardino Maia was graduated in Physics University of Brasilia (2005, Brazil) and received the master’s degree in Physics from the University of São Paulo (2007, Brazil) and PhD from the University of São Paulo (2012, Brazil). He has experience in physics of semiconductor materials, growth and processing of semiconductor devices. His research interests include simulations and theoretical modeling of physical and electronic processes in quantum heterostructures.
Pierre-Yves Lagrée was born in Courrières, France, in 1965. He joined Ecole Normale Supérieure Saint-Cloud/Lyon in 1985, and obtained the Agrégation de Physique in 1988. He stayed one year at ONERA. He received the PhD degree in fluid mechanics in 1992 and HDR in 2006 from University Paris 6. Currently, he is Senior Scientist in CNRS at the Institute Jean le Rond d’Alembert Paris 6, France. His research interests include asymptotic methods, biomechanics, granular flows and fluid mechanics.
Christophe Kazmierski was born 1950 in Gdansk, Poland. In early eighties, he contributed to pioneering work on long-wavelength lasers at the Central Research Laboratory of Thomson-CSF. From 1993 to 1999 he also headed the Laser Department of France Telecom R&D CNET, working on laser-based photonic circuits. In 1999 he has been engaged in OPTO+, joined research laboratory between France Telecom and Alcatel Corporate Research Center where he took Group Leader position working on hyper-frequency optical conversion and high speed lasers. In 2001 he left FT R&D and continued as Group Leader in Alcatel R&I. In 2004 this activity has been included in joined laboratory Alcatel-Thales III-V Lab. Presently, his personal research is focused on 10–1000Gbps electro-absorption modulator-based Photonic-Integrated-Circuit sources. He has authored over 300 papers and 18 patents in the field of III-V semiconductors. He has also served on program committees at International Semiconductor Laser, Microwave Photonics and Indium Phosphide and Related Materials Conferences. He has been involved as responsible in a dozen of co-operative international ESPRIT263, RACE I, RACE II, EUREKA, IST and national ANR, RNRT programs. Recently he led the ANR-ANTARES project and IST-MIRTHE project.
Abstract
We developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.
About the authors
Jean Decobert has been working on III-V epitaxial growth by MOVPE since he started his Master’s degree in Materials Sciences in 1987. After receiving his PhD in Electronics from the University of Lille in 1993, he joined the National Center of Telecommunication Research (CNET) in France. In 2004, he became a research engineer at the III-V Lab (the joint laboratory founded by Alcatel-Lucent and Thales R&T in 2004 and including CEA-Leti since 2011), where he is currently in charge of III-V active material growth by MOVPE for opto-electronic applications. His research activities mainly involve advanced Electroabsorbtion Modulator-Lasers (EML), Avalanche Photo-Diodes (APD) for Photonic Integrated Circuits (PIC), and p-i-n photodiodes for SWIR imaging. Actually, he is currently working on the Selective Area Growth (SAG) technique, the advanced technology platform for optoelectronic device integration.
Guillaume Binet was born in Paris, France on March 23, 1990. He received the MS in optoelectronics in 2013 from the Grenoble Institute of Technology and the MA in innovation and entrepreneurship from the Institute of Political Studies in Grenoble in 2014. He is currently working toward a PhD at the III-V lab in Marcoussis and the Pierre and Marie Curie University in Paris, focused on the development of photonic integrated circuits (PIC) by selective area growth (SAG) for optical telecommunications in the 1.3 mm band.
Alvaro Diego Bernardino Maia was graduated in Physics University of Brasilia (2005, Brazil) and received the master’s degree in Physics from the University of São Paulo (2007, Brazil) and PhD from the University of São Paulo (2012, Brazil). He has experience in physics of semiconductor materials, growth and processing of semiconductor devices. His research interests include simulations and theoretical modeling of physical and electronic processes in quantum heterostructures.
Pierre-Yves Lagrée was born in Courrières, France, in 1965. He joined Ecole Normale Supérieure Saint-Cloud/Lyon in 1985, and obtained the Agrégation de Physique in 1988. He stayed one year at ONERA. He received the PhD degree in fluid mechanics in 1992 and HDR in 2006 from University Paris 6. Currently, he is Senior Scientist in CNRS at the Institute Jean le Rond d’Alembert Paris 6, France. His research interests include asymptotic methods, biomechanics, granular flows and fluid mechanics.
Christophe Kazmierski was born 1950 in Gdansk, Poland. In early eighties, he contributed to pioneering work on long-wavelength lasers at the Central Research Laboratory of Thomson-CSF. From 1993 to 1999 he also headed the Laser Department of France Telecom R&D CNET, working on laser-based photonic circuits. In 1999 he has been engaged in OPTO+, joined research laboratory between France Telecom and Alcatel Corporate Research Center where he took Group Leader position working on hyper-frequency optical conversion and high speed lasers. In 2001 he left FT R&D and continued as Group Leader in Alcatel R&I. In 2004 this activity has been included in joined laboratory Alcatel-Thales III-V Lab. Presently, his personal research is focused on 10–1000Gbps electro-absorption modulator-based Photonic-Integrated-Circuit sources. He has authored over 300 papers and 18 patents in the field of III-V semiconductors. He has also served on program committees at International Semiconductor Laser, Microwave Photonics and Indium Phosphide and Related Materials Conferences. He has been involved as responsible in a dozen of co-operative international ESPRIT263, RACE I, RACE II, EUREKA, IST and national ANR, RNRT programs. Recently he led the ANR-ANTARES project and IST-MIRTHE project.
Acknowledgments
This work has received partial financial support from the IST-MIRTHE project. The authors acknowledge the contributions of Guilhem de Valicourt, Haïk Mardoyan, Katarzyna Ławniczuk, and Nicolas Chimot.
References
[1] J. P. Duchemin, M. Bonnet, F. Koelsch and D. Huyghe, J. Cryst. Growth 45, 181 (1978).10.1016/0022-0248(78)90432-3Search in Google Scholar
[2] R. Azoulay, N. Bouadma, J. C. Bouley and L. Dugrand, J. Cryst. Growth 55, 229 (1981).10.1016/0022-0248(81)90292-XSearch in Google Scholar
[3] R. Bhat, J. Cryst. Growth 120, 362 (1992).10.1016/0022-0248(92)90419-JSearch in Google Scholar
[4] C. Caneau, R. Bhat, C. C. Chang, K. Kash and M. A. Koza, J. Cryst. Growth 132, 364 (1993).10.1016/0022-0248(93)90060-ASearch in Google Scholar
[5] M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, et al., Semicond. Sci. Technol. 8, 998 (1993).Search in Google Scholar
[6] T. Fujii, M. Ekawa and S. Yamazaki, J. Cryst. Growth 156, 59 (1995).10.1016/0022-0248(95)00256-1Search in Google Scholar
[7] A. Ougazzaden, L. Silvestre, A. Mircea, N. Bouadma, G. Patriarche, et al., in ‘IPRM Proceedings’ (1997).Search in Google Scholar
[8] M. A. Alam, R. People, E. Isaacs, C. Y. Kim, K. Evans-Lutterodt, et al., Appl. Phys. Lett. 74, 18 (1999).10.1063/1.123915Search in Google Scholar
[9] H. Oh, M. Sugiyama, Y. Nakano and Y. Shimogaki, Jpn. J. Phys. 42, Pt. 1, 6284 (2003).Search in Google Scholar
[10] M. Sugiyama, H. Oh, Y. Nakano and Y. Shimogaki, J. Cryst. Growth 261, 279 (2004).10.1016/j.jcrysgro.2003.11.036Search in Google Scholar
[11] F. Ollson, T. Zhu, G. Mion and S. Lourdudoss, J. Cryst. Growth 289, 24 (2006).10.1016/j.jcrysgro.2005.10.130Search in Google Scholar
[12] T. Shioda, M. Sugiyama and Y. Nakano, in ‘IPRM Proceedings’, 43 (2007).Search in Google Scholar
[13] J. Décobert, N. Dupuis, P. Y. Lagrée, N. Lagay, A. Ramdane, et al., J. Cryst. Growth 298, 28 (2007).10.1016/j.jcrysgro.2006.10.005Search in Google Scholar
[14] N. Dupuis, J. Decobert, P.-Y. Lagrée, N. Lagay, F. Poingt et al., J. Appl. Phys. 103, 113113 (2008).Search in Google Scholar
[15] D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, et al., IEEE Photon. Tech. Lett. 9, 7 (1997).10.1109/68.593338Search in Google Scholar
[16] G. Laube, IPRM Proc. 392 (1996).Search in Google Scholar
[17] B. Mason, S. Chandrasekhar, A. Ougazzaden, C. Lentz, J. M. Geary, et al., IEEE Photon. Tech. Lett. 14, 1 (2002).10.1109/68.974150Search in Google Scholar
[18] N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, et al., IEEE Photon. Tech. Lett. 20, 2 (2008).Search in Google Scholar
[19] T. Sasaki and K. Kudo, in ‘WDM Technologies’ (Academic Press, 2002).Search in Google Scholar
[20] J. Décobert, N. Dupuis, P. Y. Lagrée and N. Lagay, in ‘IPRM Proceedings’ (2008).Search in Google Scholar
[21] W. Feng, W. Wang, H. Zhu, L. Zhao, L. Hou, et al., Semicond. Sci. Technol. 20, 1083 (2005).Search in Google Scholar
[22] M. Kardar, G. Parisi and Y. Zhang, Phys. Rev. Lett. 56, 889 (1986).Search in Google Scholar
[23] M. T. Batchelor, R. V. Burne, B. I. Henry and S. D. Watt, Physica A 282, 123–136 (2000).10.1016/S0378-4371(00)00077-7Search in Google Scholar
[24] T. Gueudré, P. Le Doussal, A. Rosso, A Henry and P. Calabrese, Phys. Rev. E 86, 041151 (2012).10.1103/PhysRevE.86.041151Search in Google Scholar PubMed
[25] I. Kang, in ‘OFC Proceedings’ (2006).Search in Google Scholar
[26] C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, et al., in ‘OFC Proceedings’ (2014).Search in Google Scholar
[27] G. de Valicourt, M. A. Mestre, P. Jennevé, H. Mardoyan, J. C. Antona, et al., in ‘IPRM Proceedings’ (2014).Search in Google Scholar
[28] H. Mardoyan, O. Bertran-Pardo, P. Jennevé, G. de Valicourt, M. A. Mestre et al., in ‘OFC Proceedings’ (2014).Search in Google Scholar
©2015 THOSS Media & De Gruyter
Articles in the same Issue
- Cover and Frontmatter
- Community
- News from the European Optical Society
- Conference Calendar
- Topical Issue: Integrated Photonic Devices: Sensors, Materials, Systems
- Editorial
- Special issue on ‘integrated photonic devices: sensors, materials, systems’
- Review Articles
- Silicon photonics WDM transmitter with single section semiconductor mode-locked laser
- Photonic IC design software and process design kits
- Open access to technology platforms for InP-based photonic integrated circuits
- AlGaInAs MOVPE selective area growth for photonic integrated circuits
- Lasers in InP generic photonic integration technology platforms
- TriPleX: a versatile dielectric photonic platform
- Review Article
- Considerations on automation of coating machines
Articles in the same Issue
- Cover and Frontmatter
- Community
- News from the European Optical Society
- Conference Calendar
- Topical Issue: Integrated Photonic Devices: Sensors, Materials, Systems
- Editorial
- Special issue on ‘integrated photonic devices: sensors, materials, systems’
- Review Articles
- Silicon photonics WDM transmitter with single section semiconductor mode-locked laser
- Photonic IC design software and process design kits
- Open access to technology platforms for InP-based photonic integrated circuits
- AlGaInAs MOVPE selective area growth for photonic integrated circuits
- Lasers in InP generic photonic integration technology platforms
- TriPleX: a versatile dielectric photonic platform
- Review Article
- Considerations on automation of coating machines
