Short time threshold for electrical activation of implanted and annealed GaAs

Kapitel in diesem Buch

1. Frontmatter 1
2. CONTENTS 7
3. 1. Invited papers
4. EPM'87 - STATE OF THE ART 17
5. ACCELERATION OF MICROPARTICLES 24
6. STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS 29
7. MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS 39
8. IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON 44
9. DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND 50
10. COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION 56
11. MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION 62
12. FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION 69
13. PULSED ION IMPLANTATION OF SILICON WITH SELENIUM 74
14. RAPID THERMAL PROCESSING FOR VLSI APPLICATION 80
15. SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS 87
16. EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS 99
17. THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION 104
18. MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN 110
19. ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS 116
20. APPLICATIONS OF MICROFOCUSSED ION BEAMS 124
21. STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT 131
22. MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS 140
23. 2. Implantation into silicon
24. RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON 146
25. DEFECT FLUX EFFECTS DURING ION IMPLANTATION 149
26. IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT 152
27. 6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON 155
28. ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS 158
29. HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON 161
30. DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES 164
31. JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING 167
32. A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION 170
33. EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON 173
34. 3. Implantation and annealing of compound semiconductor
35. RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER 177
36. SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs 181
37. INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS 184
38. INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs 187
39. Short time threshold for electrical activation of implanted and annealed GaAs 190
40. ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS 193
41. FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE 196
42. RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT 200
43. HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs 204
44. 4. Implantation into metals
45. FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS 207
46. STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS 210
47. STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL 213
48. WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS 216
49. TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS 219
50. MICROSTRUCTURE OF TI-IMPLANTED FE 222
51. DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL 225
52. INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON 228
53. CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS 231
54. WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS 234
55. HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS 237
56. COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS 240
57. AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS 244
58. Implantation effects on microcrack initation in fatigued metals 247
59. STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P⁺ IONS 250
60. 5. Transient heat treatment of semiconductors
61. ANNEALING OF LASER INDUCED DEFECTS IN SILICON 253
62. ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON 256
63. ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS 259
64. CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON 262
65. IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) 265
66. Laser beam induced microdefects in silicon detected by SEM and TEM 268
67. RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON 271
68. THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA 274
69. INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES 278
70. ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING 281
71. NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING 285
72. TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON 288
73. COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON 291
74. INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING 294
75. THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS 297
76. ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING 300
77. ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION 303
78. NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS 306
79. THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING 309
80. MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON 312
81. PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION 315
82. EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA 318
83. ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING 321
84. RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS 324
85. 6. Formation of silicides
86. THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi₂ LAYERS 327
87. LIQUID PHASE GROWTH OF FeSi₂ 335
88. LIQUID PHASE GROWTH OF NiSi₂ AND CoSi₂ 338
89. FORMATION OP EPITAXIAL NiSi₂ LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING 341
90. REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi₂/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING 344
91. R.B.S. STUDIES OF WSi₂ FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN 347
92. ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr₊ IONS AFTER LASER ANNEALING 350
93. CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES 354
94. 7. Ion beam assisted deposition and ion beam mixing
95. COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON 357
96. I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING 360
97. ION MIXING IN GLASSES 363
98. ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD 366
99. ION MIXING IN Cu/Au MULTILAYERED THIN FILMS 369
100. A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED 372
101. INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD 375
102. MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING 378
103. Computer simulation and and experimental measurements of recoil implantation of gold into silicon 381
104. 8. Deposition, modification and structurization
105. ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS 384
106. STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr⁺- AND Fe⁺-IONS 387
107. ION BOMBARDMENT INDUCED MODIFICATION OF La₆ 390
108. Pyrolitic laser deposition of tungsten 393
109. PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS 396
110. MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES 399
111. HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION 402
112. TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS 405
113. THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION 408
114. EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV 411
115. CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY 414
116. ON DEFECTS AND STRESSES IN THIN FILMS 417
117. ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD 420
118. 9. Silicon on insulator (SOI)
119. ELECTRICAL PROPERTIES OF SILICON FILMS ON Si0₂ FORMED BY EXPLOSIVE CRYSTALLIZATION 423
120. FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS 427
121. MODELING OF ¹⁸O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION 430
122. IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON 433
123. THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY 436
124. MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE 439
125. INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO₂ 443
126. ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS 446
127. A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON 450
128. PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S 453
129. PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON 457
130. COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION 460
131. STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING 464
132. High Throughput CO₂ laser Recrystallization for 3D integrated Devices 468
133. FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi₂ BY ION IMPLANTATION 471
134. 10. Diagnostics and ion microfocus beam
135. EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS 474
136. CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS 477
137. CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION 479
138. POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS 482
139. QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO₂/Si-STRUCTURES 485
140. HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES 489
141. A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY 492
142. THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS 495
143. MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE 498
144. CLUSTER IONS IN LASER MASS SPECTRA OF WO₃/C TARGETS 501
145. ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF ⁴⁺CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING 503
146. A MaV ION PROBE AT TU PRAGUE 506
147. 11. Fundamentals
148. COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES 508
149. MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION 511
150. ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION 514
151. TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY 517
152. MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON 521
153. INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING 524
154. INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING 527
155. NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE 530
156. SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT 533
157. PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON 536
158. THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES 539
159. MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON 542
160. LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY 545
161. THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT 548
162. AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS 551
163. 12. Miscellaneous
164. LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM 554
165. ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES 557
166. SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON 560
167. LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS 563
168. LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS 566
169. MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS 569
170. STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS 580
171. 13. Author Index 592
172. Backmatter 595