EXCIMER LASER ASSISTED DEPOSITION OF SiO₂ -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS

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1. Frontmatter I
2. CONTENTS 1
3. INVITED PAPERS
4. EXCIMER LASER ASSISTED DEPOSITION OF SiO₂ -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS 19
5. SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS 26
6. SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION 33
7. ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON 39
8. ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION 51
9. NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY 57
10. CHARACTERIZATION OF POLYCRYSTALLINE α-Al₂O₃ IMPLANTED WITH ZIRCONIUM, COPPER OR IRON 66
11. PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) 73
12. BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS 81
13. PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS 88
14. RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION 94
15. THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS 100
16. ION BEAM PROCESSING FdR SILICON-ON-INSULATOR 106
17. THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS 113
18. STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM 122
19. IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS 130
20. SUBMITTED PAPERS
21. 1. IMPLANTATION INTO SILICON
22. STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON 136
23. STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING 140
24. GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION 143
25. IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON 146
26. RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING 149
27. ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM 152
28. In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE 155
29. DEPENDENCE OF Si-SiO₂ INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION 158
30. INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS 161
31. LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL 165
32. ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P⁺-IMPLANTED SILICON UNDER RF PLASMA TREATMENT 169
33. CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION 172
34. APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS 174
35. PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS 177
36. SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI₃N₄/SIO₂/SI TARGETS 180
37. EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION 183
38. 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS
39. RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER 187
40. PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge_2x(GaAs)_1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING 191
41. MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS 194
42. AMORPHIZATION OF CD-IMPLANTED GAAS 197
43. Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING 200
44. APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE 203
45. GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION 206
46. INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES 208
47. MODIFICATION OF THE InP(100) SURFACE BY ION BEAM 211
48. DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP 215
49. CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES 217
50. 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS
51. INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE 220
52. LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS 223
53. HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES 226
54. 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION 229
55. INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING 231
56. ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON 234
57. INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING 237
58. ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES 240
59. ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE 243
60. RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON 246
61. DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND ⁶⁰Co-Ɣ IRRADIATED NTD-SILICON 249
62. 4. SILICIDES
63. INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM 252
64. PHASE FORMATION UT LASER DEPOSITED Ta_xSi _1-x FILMS 255
65. LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES 258
66. FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N⁺ IMPLANTATION 261
67. MoSi₂ FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE 264
68. QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP 268
69. REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi₂ ON Si 271
70. 5. IMPLANTATION INTO METALS
71. SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS 275
72. CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION 278
73. STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS 281
74. IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb⁺-IMPLANTED Al-ALLOY 284
75. TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING 287
76. IMPLANTATION INDUCED TEXTURE 290
77. SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING 293
78. PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION 296
79. RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS 299
80. WEAR RESISTANT COATINGS PRODUCED BY C⁺ IMPLANTATION 302
81. STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE 305
82. STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS 308
83. EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe 311
84. AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS 315
85. 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS
86. THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING 321
87. SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION 324
88. THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION 327
89. STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION 331
90. MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM 334
91. EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS 337
92. ION BEAM MIXING OF Al/Fe BINARY SYSTEMS 340
93. LASER BEAM MODIFICATION OF OPTICAL FILMS 343
94. MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM 346
95. STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS 349
96. EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS 352
97. CO₂ LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES 354
98. 7. MATERIALS DEPOSITION
99. RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION 357
100. ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS 360
101. SCANNING CO₂ LASER INDUCED OXIDATION REACTION IN Ti THIN FILM 363
102. ION BEAM ASSISTED DEPOSITION OF Al ON Fe 367
103. LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD 370
104. METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING 373
105. CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS 376
106. MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION 379
107. FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION 382
108. 8. SILICON ON INSULATORS
109. HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON 385
110. A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING 389
111. TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING 392
112. SOI STRUCTURES FORMATION BY PULSED HEATING 395
113. FORMATION MECHANISMS AND STRUCTURES OP BURIED Si₃N₄ LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING 398
114. THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS 401
115. SYNTHESIS OF Si₃N₄ BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS 404
116. OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON 407
117. STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS 411
118. THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY 413
119. 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS
120. HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS 416
121. HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS 419
122. FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS 423
123. IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION 426
124. HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE 429
125. LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM 432
126. DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh 435
127. QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS 438
128. PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS 442
129. A LITHIUM LIQUID METAL ION SOURCE 445
130. PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS 448
131. ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS 451
132. PROBE MEASUREMENTS IN LASER PRODUCED PLASMA 454
133. PLASMATRON ION SOURCE FOR ION IMPLANTATION 457
134. CEMS STUDY ON ALUMINIUM IMPLANTED IRON 460
135. CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS 463
136. LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE 466
137. INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY 469
138. HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS 472
139. AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE 474
140. 10. HIGH TEMPERATURE SUPERCONDUCTORS
141. LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS 477
142. EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS 480
143. ENHANCEMENT OF T_c Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION 483
144. PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING 486
145. FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING 489
146. PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS 492
147. FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu⁺ IMPLANTATION 495
148. SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD 497
149. 11. FUNDAMENTALS
150. COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING 501
151. DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION 504
152. ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR 507
153. A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION 510
154. PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION 513
155. COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES 516
156. THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS 519
157. TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY 522
158. THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS 525
159. RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON 528
160. IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES 531
161. AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION 534
162. ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES 537
163. THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS 540
164. MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS 543
165. NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES 546
166. ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION 549
167. DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION 552
168. PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION 555
169. THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES 558
170. NUCLEATION A? VARYING TEMPERATURES 561
171. MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION 564
172. ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES 567
173. NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS 569
174. A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION 572
175. MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits 575
176. LATE PAPER
177. A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING 579
178. Author 587
179. Physical Research 591