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Specific Memory Effect in MOS Structures

  • V. G. Litovchenko , I. P. Lisovskii , R. O. Litvinov , H. Flietner und W. Fussel
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Volume 51, Number 2 February 16
Ein Kapitel aus dem Buch Volume 51, Number 2 February 16
© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

Kapitel in diesem Buch

  1. Frontmatter I
  2. Classification Scheme II
  3. Physica status solidi (a) applied research 315
  4. Contents 317
  5. Original Papers
  6. Structural Analysis of Amorphous Pd0.8Si0.2 Alloy by the Dense Random Packing Model of Differently Sized Compressible Spheres 325
  7. Influence oi the Capture of Charge Carriers upon the I-U Curves of Hot Electron Semiconductors with Account of Phonon Heating 333
  8. Double Injection of a Strongly Degenerate Plasma 337
  9. The Role of Substrate Dislocations and Grain Boundaries in the Nucleation and Growth of Thin Electrochemical Overgrowths 345
  10. Thermal Conductivity of y-Irradiated a-Quartz below 10 K 359
  11. A Method for Observing the Ferroelectric Domain Structure by Using a Time-of-Flight Neutron Diffractometer 367
  12. The Structure of Silicon Nitride Films (III) 375
  13. On the Interpretation of TEM Images of p-n Junctions 383
  14. Photoleitfähigkeit dicht gesinterter Zinksilikate 391
  15. Singularities in the Magnetic and Superconducting Properties of YbFexMo6S8 399
  16. Investigation of Radiation Damage in Ion Implanted Silicon Crystals by Pendellösung Topography 407
  17. Subthreshold Defect Generation and Annealing in Silicon by Intense Electron Beam Bombardment 419
  18. Influence of Synthesis Conditions on the Energy Distribution in Photoluminescence Spectra of SiC Epitaxial Layers 429
  19. Negative and Positive Photoplastic Effect in CdTe 435
  20. Fast Hole Transport in Polyvinylcarbazole 445
  21. Dielectric Constant of the Bis-(p-Toluene Sulphonate) of 2,4-Hexadiyne-1,6-Diol during Solid State Polymerization 453
  22. Comparison of Mössbauer Spectra of 57Co in Silicon for High- Temperature Ion-Implanted and for Diffused Samples 459
  23. An Internal Friction Study of Stress-Induced Migration and Aggregation of Solute Ions in Silver Bromide Single Crystals 467
  24. Irradiation du fer à 20 K par les neutrons rapides et par les produits de fission de l'uranium 235 479
  25. Calculations for Optimizing the Magnification of the Magneto-Optic Kerr Effect by Interference Layers on Iron Whiskers 487
  26. Electrical Properties of Junctions between Ge Films and Monocrystalline Silicon 491
  27. A Development of Kronberg's Model for {1012} Twins in H.C.P. Metals 497
  28. Anisotropy of Spectroscopic Characteristics in the Biaxial YAlO3- Nd3+ Laser Crystals 509
  29. The Influence oi an Electric Field on the Flow Stress of Crystals of NaCl 521
  30. Intensity of Laue Diffracted Beams in the General Case of Diffraction in an Elastically Bent Crystal 527
  31. Separate Measurements of Dynamical and Kinematical X-Ray-Diffractions from Silicon Crystals with a Triple Crystal Diffractometer 533
  32. Magneto-Optical Properties of Cu-Substituted Manganese-Antimony Films 543
  33. The Biréfringent Effects of Magnetic Colloid Applied to the Study of Magnetic Domain Structures 549
  34. Observation of Overpressurized Bubbles in Helium-Irradiated Aluminium Films 559
  35. Creep of the Lamellar Al-CuAl2 Composite (II) 567
  36. The Effect of Potassium Contamination of Tungsten on Filament-Metallized Devices 573
  37. Specific Heat of Holmium and Terbium 579
  38. Resonant Tunneling Current for General Junction Potential Barrier 583
  39. Structure of Glassy Zr-Cu-and Nb-Ni Alloys 593
  40. New Shallow Acceptors Produced in Germanium by Quenching 601
  41. Ferroelectric Properties of NH4HSeO4 Crystals 609
  42. Asymmetrical Equilibrium Positions and Line Tensions of Composite Dislocations 613
  43. Double Injection into Structures with a Low-Conductivity Region (II) 623
  44. Radiation Defect Formation at Ion Implantation of Semiconductors in the Presence of Force Fields 629
  45. Mossbauer Investigation of SnO under Hydrostatic Pressure up to 41 kbar 641
  46. Study of Non-Linear Extrinsic Luminescence in GaAs (II) 645
  47. Long Period Superstructures Related to Partial Ordering in Ni3±xTe2 as Studied by Means of Electron Diffraction 657
  48. A Microdomain Model Analysis for Diffuse X-Ray Scattering from Quenched CuPt Alloy 673
  49. Emission of CaO Phosphors Activated by Eu and Tb 683
  50. Short Notes
  51. Formation of Exoelectron Emission Centers by Slow Electron Impact 687
  52. Positron Annihilation in Aluminium, Subjected to the Thermocyclic Treatment 691
  53. On the Distribution of the Magnetic Field of the Transport Current in Type- II Superconductor 695
  54. Effect of Hydrostatic Pressure on the Ferroelectric Phase Transition in NH4IO3 699
  55. Magnetostriction of Single Crystals of Intermetallic R2Co17 (R = Ho, Er, Tm, Lu) Compounds 703
  56. Diffuse Reflectance Spectra of xFe2O3 • (1 — x) [3 B2O3 • PbO] Glasses 707
  57. Anisotropy of the Transverse Magnetoresistance in p-Ge Films on GaAs 711
  58. The Determination of the Intrinsic Concentration and Effective Mass of Carriers in Semiconductors by an Optical Method 715
  59. Microwave Conductivity Measurements in CdTe 719
  60. Effect of Random Variation in Impurity Concentration on Fermi Level in n-Type Silicon 725
  61. Angular Distribution in Sputtering of Metals by 10 keV Inert-Gas Ions 729
  62. The Influence of Internal Field Non-Uniformity in Ferromagnetic Samples on the Magnetization Process in the High Magnetic Field Region 733
  63. Specific Memory Effect in MOS Structures 739
  64. Negative Magnetoresistance of an Amorphous Se-Te-Ge Sample 743
  65. Investigation of Trap Levels in GaAs Schottky Diodes by Admittance Spectroscopy 749
  66. On Surface Energy and Compressibility of A2B4C52 Semiconducting Compounds 753
  67. Elastic Compliances and Ultrasonic Attenuation in (NH4)2BeF4 in the Temperature Range from 170 to 190 K 759
  68. A Monolithic Thin Film DC-SQUID 763
  69. The Validity of the CSL Model of Grain Boundary Structure for Describing Grain Boundary Behaviour 767
  70. Thermally Stimulated Current with the Participation of Two Trapping Levels 773
  71. Zur Anisotropie der thermoelektrisehen Eigenschaften von p-SbxBi2-xTe3 779
  72. Broadening of Electrodiffusion Profiles at High Electric Fields in Glassy As2Se3:Cu 785
  73. Resistivity Anisotropy in the Layer Plane of GaTe 791
  74. A Note on the Photomagnetoelectric Effect 795
  75. The Diffusion and Electric Activity of Co in Epitaxial GaAs 799
  76. Pre-printed Titles
  77. Pre-printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 807
  78. Classification Scheme — Continued 815
  79. Backmatter 816
Heruntergeladen am 18.10.2025 von https://www.degruyterbrill.com/document/doi/10.1515/9783112497623-059/html?lang=de
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