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Optical Absorption and Thermoluminescence of KC1 Single Crystals Coloured under DC Fields
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Chapters in this book
- Frontmatter I
- Classification Scheme II
- Contents 369
-
Original Papers
- Creep of Aluminium Single Crystals under High Pressure 377
- Microstructure and Imperfections of Glassy and Glass-Ceramic Telluride Semiconductors on the Basis of Positron Annihilation 385
- Nonstoichiometric Germanium Nitride. A New Insulating Material for MIS Microelectronics 391
- The Surface Dislocation and Its Relationship to the Boundary-Integral Equation 401
- Formation and Observation of Moiré Distribution of X-Ray Waves in Bicrystal Interferometers 415
- Electrical Properties of CuCraTe2 423
- Electrooptic Diffraction in Polydomain Barium-Sodium Niobate Crystals 431
- The Nature of Grain Boundary Sliding and the Superplastic Plow 439
- Irradiation-Induced Photodarkening in As-Se-Cu Amorphous Films 449
- Study of Thermal Properties, Electrical Conductivity, and the Crystallization Process of the Glassy Alloy SeGe20 457
- On the Recovery and Annealing Kinetics of Cold-Worked M-4.5 at% Cu Alloy 463
- Electrical Studies on (Mo/W)Se2 Single Crystals (II) 469
- Influence of Substrate Deformations on Interface Structures 475
- Contribution of the Direct B-B Interaction to the Supertransferred Hyperfine Field at Diamagnetic Antimony in Oxidic Spinels Determined by 121 Sb Mössbauer Spectroscopy 485
- Sensitivity of Plane Wave Topography to Microdefects 489
- Study of the Behaviour of Al-Zn Alloys by SAXS in the Temperature Bange of the Instable Solid Solution 497
- Proton-Induced L-Shell X-Ray Emission Cross-Sections of Elements with 24 < Z2 < 50 for Projectile Energies between 30 and 350 keV 507
- New Morphological Types of CuSi Precipitates in Silicon and Their Electrical Effects 527
- Anisotropic Absorption of Unpolarized X-Radiation in Copper-Intercalated Niobium Disulfide 539
- The Influence of Ion Implantation on the Thermal Oxidation of Copper 547
- Structures magnétiques de FeGe monoclinique 555
- Precipitation Hardening Caused by a Difference in Shear Modulus between Particle and Matrix 571
- Hardening by Thermal Vacancies and Quenching Strains in Singly-Oriented Pb Single Crystals 583
- Paramagnetic Hyperfine Structure of Iron(57) in V 1-x Fe x O 2 589
- Calculation of the Lennard-Jones n-m Potential Energy Parameters for Metals 595
- Rugosité de surface et sélectivité de couches minces de dioxyde molybdène 607
- Internal Friction Peaks and Structural Relaxation on Some Electroless Deposited Amorphous Alloys 615
- Tail-Tail Luminescence in Amorphous Silicon 623
- Solid Solution Hardening of Cd-Zn Single Crystals a t 1.5, 2.8, and 4.2 K 633
- The Nature of Photoluminescence from Plastically Deformed Silicon 639
- Dielectric and Electrical Properties of Sn02, Sb203, and Their Mixed Films 647
- Disiocation Configurations Induced by Cyclic Deformation in Silicon Crystals 655
- Optical Absorption and Thermoluminescence of KC1 Single Crystals Coloured under DC Fields 665
- Courants de dépolarisation stimulés thermiquement dans le sulfate de cerium (III) enneahydraté 671
- Thermally Induced Changes in the Cathodoluminescence Image of Deformed MgO 679
- Thermoluminescence of Z3 Centres in X-Irradiated Ca-Doped KCI Crystals 685
- Radiation-Induced Conductivity in Polyethylene 689
- a<100> Dislocation Loops in MgO. Unusual Configurations 697
- On the Identification of New and Normal Phases in the System of Cadmium-Antimony Alloys 705
- Magnetic Properties and Thermal Expansion of (Zr 1-x Ta x ) Fe 2 717
- Growth and Stimulated Emission Spectroscopy of Ca 3 Ga 2 Ge 3 O12- Nd 3+ Garnet Crystals 723
- Investigation of Formation Conditions of Thermal Donors-I and -II in Oxygen-Containing n-Type Silicon within the Temperature Range 400 to 800 °C 733
- Influence of Magnetostriction on FMR in Thin Garnet (111) Films 741
- Rigid Sphere Model Applied to the Phase Transitions of Complex Compounds of the Type K2PtCl 6 751
- Erratum 759
- Erratum 760
- Erratum 761
-
Short Notes
- Bubble Film Characterization by Differential Susceptibility Measurements 767
- X-Ray Determination of the Surface Compression Force in the Ion-Doped Layer in Silicon 771
- Electrical Conduction in Nickel Ferrite 775
- Optical Absorption in InP Crystals with Point Radiation Defects 779
- Electrical Conductivity of Li 16-2x Znx(GeO4)4 783
- The Interstitial Type Defects in Ion Implanted Silicon 787
- Intense Exoelectron Emission from Fine Particles of Al 2 O 3 and Its Dependence on the Conductivity of the Substrate Material 793
- Absorbed Energy Distribution in Heterogeneous Semiconductor Structures 797
- Drift Mobility Measurements on Single Crystals of Orthorhombic Benzophenone Using the Electron Bombardment Technique 803
- On the Effect of Ambients on the Formation of Oxygen-Related Donors in Cz-Si 807
- Dielectric Relaxation Study of the Incommensurate Phase of [(CH3)4N]2 CuBr4 near the Transition Temperature 813
- Silicon-Nickel Silicide Schottky Barriers Formed by Ion Mixing 817
- On the Resistive Anomaly in NiCuSi and NiCuZn Alloys near the Curie Temperature 821
- Variation of the Magnetic Properties of SmCo5 Powders by Water Milling 825
- Photoluminescence of Rare-Earth Centers in ZnO Phosphors 827
- Specific Heat of a K2ScO4 Single Crystal in Temperature Range 0.6 to 7 K 833
- Deformation of Epitaxial Structures on the Basis of GaAs in the Process of Their Production 837
- Effect of Twisting of the Diffraction Net Planes on the Integral Intensities at Laue Diffraction of X-Rays in Elastically Bent Silicon Crystals 841
- Temperature Dependence and Frequency Dispersion Mechanisms of the Magnetic Permeability of Monocrystalline Mn-Zn Ferrite 845
- Recombination and Trapping Levels in GaS: Mn Single Crystals 849
- Effect of Ytterbium on the Electorphysical Properties of Ga2Se3 Single Crystals 855
- Effect of Empty Spaces on the Lattice Thermal Conductivity of Non-Crystalline Material at Low Temperatures. Application to Borosilicate Glass 861
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 867
- Classification Scheme —Continued 875
- Backmatter 876
Chapters in this book
- Frontmatter I
- Classification Scheme II
- Contents 369
-
Original Papers
- Creep of Aluminium Single Crystals under High Pressure 377
- Microstructure and Imperfections of Glassy and Glass-Ceramic Telluride Semiconductors on the Basis of Positron Annihilation 385
- Nonstoichiometric Germanium Nitride. A New Insulating Material for MIS Microelectronics 391
- The Surface Dislocation and Its Relationship to the Boundary-Integral Equation 401
- Formation and Observation of Moiré Distribution of X-Ray Waves in Bicrystal Interferometers 415
- Electrical Properties of CuCraTe2 423
- Electrooptic Diffraction in Polydomain Barium-Sodium Niobate Crystals 431
- The Nature of Grain Boundary Sliding and the Superplastic Plow 439
- Irradiation-Induced Photodarkening in As-Se-Cu Amorphous Films 449
- Study of Thermal Properties, Electrical Conductivity, and the Crystallization Process of the Glassy Alloy SeGe20 457
- On the Recovery and Annealing Kinetics of Cold-Worked M-4.5 at% Cu Alloy 463
- Electrical Studies on (Mo/W)Se2 Single Crystals (II) 469
- Influence of Substrate Deformations on Interface Structures 475
- Contribution of the Direct B-B Interaction to the Supertransferred Hyperfine Field at Diamagnetic Antimony in Oxidic Spinels Determined by 121 Sb Mössbauer Spectroscopy 485
- Sensitivity of Plane Wave Topography to Microdefects 489
- Study of the Behaviour of Al-Zn Alloys by SAXS in the Temperature Bange of the Instable Solid Solution 497
- Proton-Induced L-Shell X-Ray Emission Cross-Sections of Elements with 24 < Z2 < 50 for Projectile Energies between 30 and 350 keV 507
- New Morphological Types of CuSi Precipitates in Silicon and Their Electrical Effects 527
- Anisotropic Absorption of Unpolarized X-Radiation in Copper-Intercalated Niobium Disulfide 539
- The Influence of Ion Implantation on the Thermal Oxidation of Copper 547
- Structures magnétiques de FeGe monoclinique 555
- Precipitation Hardening Caused by a Difference in Shear Modulus between Particle and Matrix 571
- Hardening by Thermal Vacancies and Quenching Strains in Singly-Oriented Pb Single Crystals 583
- Paramagnetic Hyperfine Structure of Iron(57) in V 1-x Fe x O 2 589
- Calculation of the Lennard-Jones n-m Potential Energy Parameters for Metals 595
- Rugosité de surface et sélectivité de couches minces de dioxyde molybdène 607
- Internal Friction Peaks and Structural Relaxation on Some Electroless Deposited Amorphous Alloys 615
- Tail-Tail Luminescence in Amorphous Silicon 623
- Solid Solution Hardening of Cd-Zn Single Crystals a t 1.5, 2.8, and 4.2 K 633
- The Nature of Photoluminescence from Plastically Deformed Silicon 639
- Dielectric and Electrical Properties of Sn02, Sb203, and Their Mixed Films 647
- Disiocation Configurations Induced by Cyclic Deformation in Silicon Crystals 655
- Optical Absorption and Thermoluminescence of KC1 Single Crystals Coloured under DC Fields 665
- Courants de dépolarisation stimulés thermiquement dans le sulfate de cerium (III) enneahydraté 671
- Thermally Induced Changes in the Cathodoluminescence Image of Deformed MgO 679
- Thermoluminescence of Z3 Centres in X-Irradiated Ca-Doped KCI Crystals 685
- Radiation-Induced Conductivity in Polyethylene 689
- a<100> Dislocation Loops in MgO. Unusual Configurations 697
- On the Identification of New and Normal Phases in the System of Cadmium-Antimony Alloys 705
- Magnetic Properties and Thermal Expansion of (Zr 1-x Ta x ) Fe 2 717
- Growth and Stimulated Emission Spectroscopy of Ca 3 Ga 2 Ge 3 O12- Nd 3+ Garnet Crystals 723
- Investigation of Formation Conditions of Thermal Donors-I and -II in Oxygen-Containing n-Type Silicon within the Temperature Range 400 to 800 °C 733
- Influence of Magnetostriction on FMR in Thin Garnet (111) Films 741
- Rigid Sphere Model Applied to the Phase Transitions of Complex Compounds of the Type K2PtCl 6 751
- Erratum 759
- Erratum 760
- Erratum 761
-
Short Notes
- Bubble Film Characterization by Differential Susceptibility Measurements 767
- X-Ray Determination of the Surface Compression Force in the Ion-Doped Layer in Silicon 771
- Electrical Conduction in Nickel Ferrite 775
- Optical Absorption in InP Crystals with Point Radiation Defects 779
- Electrical Conductivity of Li 16-2x Znx(GeO4)4 783
- The Interstitial Type Defects in Ion Implanted Silicon 787
- Intense Exoelectron Emission from Fine Particles of Al 2 O 3 and Its Dependence on the Conductivity of the Substrate Material 793
- Absorbed Energy Distribution in Heterogeneous Semiconductor Structures 797
- Drift Mobility Measurements on Single Crystals of Orthorhombic Benzophenone Using the Electron Bombardment Technique 803
- On the Effect of Ambients on the Formation of Oxygen-Related Donors in Cz-Si 807
- Dielectric Relaxation Study of the Incommensurate Phase of [(CH3)4N]2 CuBr4 near the Transition Temperature 813
- Silicon-Nickel Silicide Schottky Barriers Formed by Ion Mixing 817
- On the Resistive Anomaly in NiCuSi and NiCuZn Alloys near the Curie Temperature 821
- Variation of the Magnetic Properties of SmCo5 Powders by Water Milling 825
- Photoluminescence of Rare-Earth Centers in ZnO Phosphors 827
- Specific Heat of a K2ScO4 Single Crystal in Temperature Range 0.6 to 7 K 833
- Deformation of Epitaxial Structures on the Basis of GaAs in the Process of Their Production 837
- Effect of Twisting of the Diffraction Net Planes on the Integral Intensities at Laue Diffraction of X-Rays in Elastically Bent Silicon Crystals 841
- Temperature Dependence and Frequency Dispersion Mechanisms of the Magnetic Permeability of Monocrystalline Mn-Zn Ferrite 845
- Recombination and Trapping Levels in GaS: Mn Single Crystals 849
- Effect of Ytterbium on the Electorphysical Properties of Ga2Se3 Single Crystals 855
- Effect of Empty Spaces on the Lattice Thermal Conductivity of Non-Crystalline Material at Low Temperatures. Application to Borosilicate Glass 861
-
Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 867
- Classification Scheme —Continued 875
- Backmatter 876