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Inductance of Small Window Type Tunnel Junctions

  • W. Zahn
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Volume 64, Number 1 March 16
This chapter is in the book Volume 64, Number 1 March 16
© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

© 2021 Walter de Gruyter GmbH, Berlin/Munich/Boston

Chapters in this book

  1. Frontmatter I
  2. Contents 1
  3. Author Index III
  4. Twenty Five Years of Semiconductor-Grade Silicon 11
  5. Etude de la phase a des alliages Cu-Al 45
  6. Analytic Approximations for Describing the Irradiation Growth of Zirconium-Base Alloys (II) 53
  7. On the Nature of Colour Centres in Ultramarine and Blue Alkali Borate Glasses Containing Sulphur 65
  8. Formation of Ultrathin Oxide Films on Silicon in RF Oxygen Plasma 73
  9. On the Possibility of Having Phasers 81
  10. DLTS Method Using a Single Temperature Scanning 85
  11. Electrical Resistivity of Fe-Rich Fe-Pd Alloys between 77 and 1250 K 95
  12. Factors Affecting Microhardness Measurements on NaCl Crystals 105
  13. Micro Inversion Domains Formed during the Crystallization of the Amorphous Alloy Fe40Ni40P14B6 113
  14. Activation Energy and Activation Volume of Dislocation Movement through Randomly Distributed Point Obstacles 121
  15. Thermoluminescence of Z2 Centers in X-Irradiated Ca-Doped KCl Crystals 127
  16. X-Ray Diffraction Study of Debye Temperature and Charge Distribution in Tantalum Monocarbide 133
  17. The Annealing Characteristics of Arsenic-Implanted Silicon Investigated at Low Temperatures 143
  18. On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C 151
  19. Electrical Conduction in Reactively Sputtered Silicon Nitride Films at Medium Field Strengths 159
  20. Magnetic Relaxation in Electron-Irradiated Ordered Ni3Fe 169
  21. On the Effect of Halogens on Proton Processes in the Si-SiO2 Structures 177
  22. Impurity Diffusion of AI in Ni Single Crystals Studied by Secondary Ion Mass Spectrometry (SIMS) 187
  23. Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System 195
  24. Modulation-Spectroscopic Investigations of Defect Centres in PbMoO4 Crystals 207
  25. Dotierungseigenschaften von Eisen in Silizium 215
  26. Diffusion and Solubility of Chromium 51 in Silver Single Crystals 225
  27. Surface Erosion during Annealing of MIIIXV:FIIb Systems and Its Reduction 233
  28. A New Attempt for Understanding Temperature-Dependent Thresholds in Lead Salt Injection Lasers 239
  29. Electrical Properties of Grain Boundaries in n-Type and p-Type GaP 249
  30. Investigation of the K2NiF4-Type Layer Oxide Fluorides Sr2FeO3+zF1-x(0<x<0.20) 261
  31. About the Asymmetries in Mossbauer Spectra of Magnetic Amorphous Transition Metal-Metalloid Alloys 275
  32. Etude des franges de moirés en microscopie électronique par la théorie dynamique á N ondes et application aux doubles couches Sb-Bi 283
  33. Dielectric Dependence of EL Brightness of Powdered Phosphor and Particle Size Distribution 297
  34. Color Centers in Irradiated Durene Crystals 303
  35. Conductivity and Crystallization of Amorphous Selenium 311
  36. Recrystallization near Low-Angle [001] Tilt Boundaries Following Cobalt Implantation in Bicrystalline Thin Films of Gold 317
  37. Môssbauer Study of the Temperature Dependence of the Magnetization Direction and the Hyperfine Interactions in the Laves Phase Compound GdFe2 325
  38. The Elastic Constants of Ni3Al at 0 and 23.5 °C 335
  39. Induced Perpendicular Anisotropy and Surface Crystallization in Amorphous Fe78B12Si10 Ribbons 343
  40. Errors Due to Lack of Contact in Measurements of Dielectric Relaxation Parameters for Solid Powders 351
  41. On the Theory of External Photoeffect Accompanying X-Ray Diffraction in an Ideal Crystal with Disturbed Surface Layer 359
  42. Crystal and Magnetic Structure of the NiMnGe1-nSin System 367
  43. High-Pressure Polymorphism of Antimony 379
  44. The Scattering of Ultrasonic Waves by Polycrystals 385
  45. Mechanoluminescence and Piezoelectric Behaviour of Molecular Crystals 395
  46. Laser Annealing of Silicon Wafers at 10.6 μm 407
  47. Effect of Quenching and X-Ray Irradiation on the Dielectric Properties of Pbl2 Single Crystals 413
  48. Erratum 419
  49. Erratum 419
  50. Drift Mobility in Insulating Barium Titanate Ceramics 425
  51. Observation of Ferroelectric Domains in Gel Grown PbHPO4 Crystals 429
  52. Investigation of the Ec - 0.55 eV Level of Iron in Silicon 431
  53. Effect of Hydrostatic Pressure on the Electrical Resistivity of Cr and Cr-Co Alloys at Room Temperature 437
  54. Far Infrared Spectra of NH4HSeO4 441
  55. The Effect of Neutron Irradiation on the Electrical Resistivity of Amorphous Fe47Ni25B18Si10 Alloys 443
  56. Electrical Properties of Quinolinium (TCNQ)2 447
  57. The Mean Kinetic Energy of Sputtered Atoms as a Function of the Angle of Emission 451
  58. Untersuchung des homogenen Gebietes in unlegiertem Galliumantimonid 455
  59. Occurrence of AC Loss Minimum in Type II Superconductors 459
  60. The Fine Structure of the 0.84 eV No-Phonon Luminescence in GaAs:Cr 463
  61. Inductance of Small Window Type Tunnel Junctions 467
  62. 1/f Noise in Si Avalanche Diodes at X-Band 473
  63. On the Possible Mechanism of Misfit Dislocation Generation 479
  64. Saturated Open Circuit Photovoltage - a New Method for Measuring the Carrier Lifetime at High Excitation Level 483
  65. Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon 487
  66. Evidence for Glide of Charged Dislocations on {111} Planes in NaCl Crystals 491
  67. High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon 497
  68. Infrared Absorption of Hydrogen in Proton-Implanted GaP 501
  69. On the Effect of Phase Transformation on the Steady State Creep of Cobalt 505
  70. Differences in Plastic Deformation Behaviour of CZ- and FZ-Grown Silicon Crystals 509
  71. Of papers to b': published in the next issues of physica status solidi (a) and physica status solidi (b) 513
  72. Backmatter 521
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