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Inductance of Small Window Type Tunnel Junctions
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W. Zahn
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Chapters in this book
- Frontmatter I
- Contents 1
- Author Index III
- Twenty Five Years of Semiconductor-Grade Silicon 11
- Etude de la phase a des alliages Cu-Al 45
- Analytic Approximations for Describing the Irradiation Growth of Zirconium-Base Alloys (II) 53
- On the Nature of Colour Centres in Ultramarine and Blue Alkali Borate Glasses Containing Sulphur 65
- Formation of Ultrathin Oxide Films on Silicon in RF Oxygen Plasma 73
- On the Possibility of Having Phasers 81
- DLTS Method Using a Single Temperature Scanning 85
- Electrical Resistivity of Fe-Rich Fe-Pd Alloys between 77 and 1250 K 95
- Factors Affecting Microhardness Measurements on NaCl Crystals 105
- Micro Inversion Domains Formed during the Crystallization of the Amorphous Alloy Fe40Ni40P14B6 113
- Activation Energy and Activation Volume of Dislocation Movement through Randomly Distributed Point Obstacles 121
- Thermoluminescence of Z2 Centers in X-Irradiated Ca-Doped KCl Crystals 127
- X-Ray Diffraction Study of Debye Temperature and Charge Distribution in Tantalum Monocarbide 133
- The Annealing Characteristics of Arsenic-Implanted Silicon Investigated at Low Temperatures 143
- On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C 151
- Electrical Conduction in Reactively Sputtered Silicon Nitride Films at Medium Field Strengths 159
- Magnetic Relaxation in Electron-Irradiated Ordered Ni3Fe 169
- On the Effect of Halogens on Proton Processes in the Si-SiO2 Structures 177
- Impurity Diffusion of AI in Ni Single Crystals Studied by Secondary Ion Mass Spectrometry (SIMS) 187
- Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System 195
- Modulation-Spectroscopic Investigations of Defect Centres in PbMoO4 Crystals 207
- Dotierungseigenschaften von Eisen in Silizium 215
- Diffusion and Solubility of Chromium 51 in Silver Single Crystals 225
- Surface Erosion during Annealing of MIIIXV:FIIb Systems and Its Reduction 233
- A New Attempt for Understanding Temperature-Dependent Thresholds in Lead Salt Injection Lasers 239
- Electrical Properties of Grain Boundaries in n-Type and p-Type GaP 249
- Investigation of the K2NiF4-Type Layer Oxide Fluorides Sr2FeO3+zF1-x(0<x<0.20) 261
- About the Asymmetries in Mossbauer Spectra of Magnetic Amorphous Transition Metal-Metalloid Alloys 275
- Etude des franges de moirés en microscopie électronique par la théorie dynamique á N ondes et application aux doubles couches Sb-Bi 283
- Dielectric Dependence of EL Brightness of Powdered Phosphor and Particle Size Distribution 297
- Color Centers in Irradiated Durene Crystals 303
- Conductivity and Crystallization of Amorphous Selenium 311
- Recrystallization near Low-Angle [001] Tilt Boundaries Following Cobalt Implantation in Bicrystalline Thin Films of Gold 317
- Môssbauer Study of the Temperature Dependence of the Magnetization Direction and the Hyperfine Interactions in the Laves Phase Compound GdFe2 325
- The Elastic Constants of Ni3Al at 0 and 23.5 °C 335
- Induced Perpendicular Anisotropy and Surface Crystallization in Amorphous Fe78B12Si10 Ribbons 343
- Errors Due to Lack of Contact in Measurements of Dielectric Relaxation Parameters for Solid Powders 351
- On the Theory of External Photoeffect Accompanying X-Ray Diffraction in an Ideal Crystal with Disturbed Surface Layer 359
- Crystal and Magnetic Structure of the NiMnGe1-nSin System 367
- High-Pressure Polymorphism of Antimony 379
- The Scattering of Ultrasonic Waves by Polycrystals 385
- Mechanoluminescence and Piezoelectric Behaviour of Molecular Crystals 395
- Laser Annealing of Silicon Wafers at 10.6 μm 407
- Effect of Quenching and X-Ray Irradiation on the Dielectric Properties of Pbl2 Single Crystals 413
- Erratum 419
- Erratum 419
- Drift Mobility in Insulating Barium Titanate Ceramics 425
- Observation of Ferroelectric Domains in Gel Grown PbHPO4 Crystals 429
- Investigation of the Ec - 0.55 eV Level of Iron in Silicon 431
- Effect of Hydrostatic Pressure on the Electrical Resistivity of Cr and Cr-Co Alloys at Room Temperature 437
- Far Infrared Spectra of NH4HSeO4 441
- The Effect of Neutron Irradiation on the Electrical Resistivity of Amorphous Fe47Ni25B18Si10 Alloys 443
- Electrical Properties of Quinolinium (TCNQ)2 447
- The Mean Kinetic Energy of Sputtered Atoms as a Function of the Angle of Emission 451
- Untersuchung des homogenen Gebietes in unlegiertem Galliumantimonid 455
- Occurrence of AC Loss Minimum in Type II Superconductors 459
- The Fine Structure of the 0.84 eV No-Phonon Luminescence in GaAs:Cr 463
- Inductance of Small Window Type Tunnel Junctions 467
- 1/f Noise in Si Avalanche Diodes at X-Band 473
- On the Possible Mechanism of Misfit Dislocation Generation 479
- Saturated Open Circuit Photovoltage - a New Method for Measuring the Carrier Lifetime at High Excitation Level 483
- Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon 487
- Evidence for Glide of Charged Dislocations on {111} Planes in NaCl Crystals 491
- High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon 497
- Infrared Absorption of Hydrogen in Proton-Implanted GaP 501
- On the Effect of Phase Transformation on the Steady State Creep of Cobalt 505
- Differences in Plastic Deformation Behaviour of CZ- and FZ-Grown Silicon Crystals 509
- Of papers to b': published in the next issues of physica status solidi (a) and physica status solidi (b) 513
- Backmatter 521
Chapters in this book
- Frontmatter I
- Contents 1
- Author Index III
- Twenty Five Years of Semiconductor-Grade Silicon 11
- Etude de la phase a des alliages Cu-Al 45
- Analytic Approximations for Describing the Irradiation Growth of Zirconium-Base Alloys (II) 53
- On the Nature of Colour Centres in Ultramarine and Blue Alkali Borate Glasses Containing Sulphur 65
- Formation of Ultrathin Oxide Films on Silicon in RF Oxygen Plasma 73
- On the Possibility of Having Phasers 81
- DLTS Method Using a Single Temperature Scanning 85
- Electrical Resistivity of Fe-Rich Fe-Pd Alloys between 77 and 1250 K 95
- Factors Affecting Microhardness Measurements on NaCl Crystals 105
- Micro Inversion Domains Formed during the Crystallization of the Amorphous Alloy Fe40Ni40P14B6 113
- Activation Energy and Activation Volume of Dislocation Movement through Randomly Distributed Point Obstacles 121
- Thermoluminescence of Z2 Centers in X-Irradiated Ca-Doped KCl Crystals 127
- X-Ray Diffraction Study of Debye Temperature and Charge Distribution in Tantalum Monocarbide 133
- The Annealing Characteristics of Arsenic-Implanted Silicon Investigated at Low Temperatures 143
- On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C 151
- Electrical Conduction in Reactively Sputtered Silicon Nitride Films at Medium Field Strengths 159
- Magnetic Relaxation in Electron-Irradiated Ordered Ni3Fe 169
- On the Effect of Halogens on Proton Processes in the Si-SiO2 Structures 177
- Impurity Diffusion of AI in Ni Single Crystals Studied by Secondary Ion Mass Spectrometry (SIMS) 187
- Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System 195
- Modulation-Spectroscopic Investigations of Defect Centres in PbMoO4 Crystals 207
- Dotierungseigenschaften von Eisen in Silizium 215
- Diffusion and Solubility of Chromium 51 in Silver Single Crystals 225
- Surface Erosion during Annealing of MIIIXV:FIIb Systems and Its Reduction 233
- A New Attempt for Understanding Temperature-Dependent Thresholds in Lead Salt Injection Lasers 239
- Electrical Properties of Grain Boundaries in n-Type and p-Type GaP 249
- Investigation of the K2NiF4-Type Layer Oxide Fluorides Sr2FeO3+zF1-x(0<x<0.20) 261
- About the Asymmetries in Mossbauer Spectra of Magnetic Amorphous Transition Metal-Metalloid Alloys 275
- Etude des franges de moirés en microscopie électronique par la théorie dynamique á N ondes et application aux doubles couches Sb-Bi 283
- Dielectric Dependence of EL Brightness of Powdered Phosphor and Particle Size Distribution 297
- Color Centers in Irradiated Durene Crystals 303
- Conductivity and Crystallization of Amorphous Selenium 311
- Recrystallization near Low-Angle [001] Tilt Boundaries Following Cobalt Implantation in Bicrystalline Thin Films of Gold 317
- Môssbauer Study of the Temperature Dependence of the Magnetization Direction and the Hyperfine Interactions in the Laves Phase Compound GdFe2 325
- The Elastic Constants of Ni3Al at 0 and 23.5 °C 335
- Induced Perpendicular Anisotropy and Surface Crystallization in Amorphous Fe78B12Si10 Ribbons 343
- Errors Due to Lack of Contact in Measurements of Dielectric Relaxation Parameters for Solid Powders 351
- On the Theory of External Photoeffect Accompanying X-Ray Diffraction in an Ideal Crystal with Disturbed Surface Layer 359
- Crystal and Magnetic Structure of the NiMnGe1-nSin System 367
- High-Pressure Polymorphism of Antimony 379
- The Scattering of Ultrasonic Waves by Polycrystals 385
- Mechanoluminescence and Piezoelectric Behaviour of Molecular Crystals 395
- Laser Annealing of Silicon Wafers at 10.6 μm 407
- Effect of Quenching and X-Ray Irradiation on the Dielectric Properties of Pbl2 Single Crystals 413
- Erratum 419
- Erratum 419
- Drift Mobility in Insulating Barium Titanate Ceramics 425
- Observation of Ferroelectric Domains in Gel Grown PbHPO4 Crystals 429
- Investigation of the Ec - 0.55 eV Level of Iron in Silicon 431
- Effect of Hydrostatic Pressure on the Electrical Resistivity of Cr and Cr-Co Alloys at Room Temperature 437
- Far Infrared Spectra of NH4HSeO4 441
- The Effect of Neutron Irradiation on the Electrical Resistivity of Amorphous Fe47Ni25B18Si10 Alloys 443
- Electrical Properties of Quinolinium (TCNQ)2 447
- The Mean Kinetic Energy of Sputtered Atoms as a Function of the Angle of Emission 451
- Untersuchung des homogenen Gebietes in unlegiertem Galliumantimonid 455
- Occurrence of AC Loss Minimum in Type II Superconductors 459
- The Fine Structure of the 0.84 eV No-Phonon Luminescence in GaAs:Cr 463
- Inductance of Small Window Type Tunnel Junctions 467
- 1/f Noise in Si Avalanche Diodes at X-Band 473
- On the Possible Mechanism of Misfit Dislocation Generation 479
- Saturated Open Circuit Photovoltage - a New Method for Measuring the Carrier Lifetime at High Excitation Level 483
- Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon 487
- Evidence for Glide of Charged Dislocations on {111} Planes in NaCl Crystals 491
- High-Speed Electron Beam Annealing of Arsenic and Gallium Implanted Silicon 497
- Infrared Absorption of Hydrogen in Proton-Implanted GaP 501
- On the Effect of Phase Transformation on the Steady State Creep of Cobalt 505
- Differences in Plastic Deformation Behaviour of CZ- and FZ-Grown Silicon Crystals 509
- Of papers to b': published in the next issues of physica status solidi (a) and physica status solidi (b) 513
- Backmatter 521