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Laser Annealing of Thin Buried Amorphous Layers in Silicon
-
G. Götz
, H. D. Geiler , M. Wagner , K. H. Heinig and H. Woittenneck
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Chapters in this book
- Frontmatter I
- Contents 407
-
Original Papers
- The Effect of Dislocation Inertia on the Thermally Activated Low Temperature Plasticity of Materials 415
- Efficient Narrowing of the Mössbauer Line by Resonant Filtering 425
- Electron Diffraction and High Resolution Electron Microscopy Study of Ordering in the Gold-Manganese System 431
- High-Frequency Photomagnetoelectric Method for Determining Semiconductor Parameters 447
- Silicon Amorphization by Ion Beam with Radiation Heating 453
- Internal Size Effect in Condensed BaTiO3 Ferroelectric Films 463
- Simulation of Dislocation Motion through a Dislocation Forest 469
- The Far-Infrared Spectra of Some Mixed Cobalt Zinc and Magnesium Zinc Ferrites 479
- Thermally Stimulated Depolarization for Quasi-Continuous Distribution of Relaxators according to Activation Energy and Frequency Factor 485
- Some Features of Acoustoelectronic Interaction in p-Te in Magnetic Field 491
- Grain Boundary Dislocation Observations Using the Field Ion Microscope 497
- Metamagnetism of Two-Sublattice Uniaxial Antiferromagnets 503
- Barium-Strontium Niobate Crystals for Optical Information Recording 513
- The Aluminium Thermal Conductivity and Deviation from Matthiessen's Rule 523
- Photoluminescent Methods for Determination of Graded Band-Gap Semiconductor Parameters 529
- Experimental and Simulated X-Ray Contrast of Striations for Nearly Plane Waves in the Laue Case 535
- Thermal Quenching of Photoluminescence in ZnS:Mn and ZnSerMn 545
- Excitations and Phases of Two-Beam Dynamical Bragg Reflection of X-Rays for Infinitely Thick Crystals 553
- Specific Heat, Debye Temperature, and Related Properties of Compound Semiconductors AIIBIVCV2 563
- H . A. SCHNEIDER 571
- Deep Level Spectroscopy and Schottky Barrier Characteristics of LPE n- and p-InP 583
- Magnetic Susceptibility and Electrical Properties of the x-Phase M017 O47 with Substitutions of Molybdenum 589
- New Phase Transitions in Arsenic Films 595
- An Interpretation of White (Synchrotron) X-Radiation Laue (Topograph) Patterns by Means of the Gnomonic Projection 601
- Impurity Profile on GaP Diodes in the Neighbourhood of a p-n Junction 609
- Luminescence oi Activated Alkali Halide Crystals at Excitation in the Fundamental Absorption Region 617
- Spatial Distributions of Channeled Ions 623
- A Simple Approach to Reactive Processes on the Interface during Crystal Growth 637
- Shallow Diffusions of Zinc in GaAs at 700 °C 643
- An Analytical Model of SEM and STEM Charge Collection Images of Dislocations in Thin Semiconductor Layers 649
- Effect of Temperature on the Dark and Photoconductivity of Metal-Free Phthalocyanine 659
- The Cation Distribution in the Spinel System Fe3-xGaxO4 669
- Laser Annealing of Thin Buried Amorphous Layers in Silicon 677
- Heavy Doping Effects in Bipolar Silicon Transistors and p-n Junction Silicon Solar Cells 683
- Structure of Pt75P25 Glass 695
- Mechanism of Charge Flow through the M-Ge3N4-GaAs Structure 701
- Acceptor Boron in α-SiC (6H): Investigation by the Photocapacitance Method 709
- Electronic Behaviour of SnS2 Crystals 717
- A New Method of Analysis of Traps Taking Part in the Electroluminescence Process 725
- Mössbauer Study of the Low-Temperature Phase of Magnetite 731
- Temperature Dependence of the Energy Gap in Pyrite (FeS2) 737
- Non-Stoichiometry and Electrical Conductivity of Strontium Mobates with Perovskite Structure 743
- Numerical Analysis of Step Junction pvn Diode with Different Lifetime Models 753
-
Short Notes
- Figures 761
- Spinodal Decomposition in Amorphous Boron -Implanted Iron Films 773
- TEM In-Situ Observation of Electromig ration in Al Stripes with Quasi-Bamboo Structure 777
- On the Composition and Crystallinity of the Titanium-Rich Second Phase in BaTiO3 Ceramic 779
- Electrical Properties of CdSe Thin Films 783
- New Reversal Process of Neel Walls Due to Nanosecond Field Pulses 787
- Commentaires sur la rèsistivité électrique des alliages Al-Zn et la décomposition spinodale 791
- Einige Bemerkungen zur Arbeit Commentaires sur la résistivité électrique des alliages Al-Zn et la décomposition spinodale / 1 / 797
- Photoluminescence in Spattered ZnO Thin Films 801
- Electrical Conductivity and Thermopower Measurements on Silver Doped Tellurium Films 805
- On the Transport Properties of Chromium-Aluminium Alloys at Low Temperatures 809
- Some Optical Properties of Thin Nickel Films 813
- Electrical Properties of CdP2 Single Crystals 819
- Phase Transitions in Iron Alloys 823
- Single Crystal Magnetic Studies on the y -Form of Bis N-Methylsalicylaldimine Copper (II) 827
- Photoconductivity and Anomalous Photovoltaic Effect in Cubic Piezoelectric La2S3 833
- On the Dielectric Properties of Tetracyanoquinodimethane (TCNQ) Salts with N-Methyl Derivatives of Pyridine 835
- Influence of Lattice Defects on the Superconducting Behaviour of Implanted PdHx Thin Film Layers 839
- Kossel Line Profiles near Dislocations in GaP 845
- Superconductive Compound Nb5Se2S2 with Ti5Te4 Structure 849
- Preparation and Properties of GaAsSb and GaAlAsSb Epi-Layers 853
- Erratum 859
- Pre-Printed Titles 861
Chapters in this book
- Frontmatter I
- Contents 407
-
Original Papers
- The Effect of Dislocation Inertia on the Thermally Activated Low Temperature Plasticity of Materials 415
- Efficient Narrowing of the Mössbauer Line by Resonant Filtering 425
- Electron Diffraction and High Resolution Electron Microscopy Study of Ordering in the Gold-Manganese System 431
- High-Frequency Photomagnetoelectric Method for Determining Semiconductor Parameters 447
- Silicon Amorphization by Ion Beam with Radiation Heating 453
- Internal Size Effect in Condensed BaTiO3 Ferroelectric Films 463
- Simulation of Dislocation Motion through a Dislocation Forest 469
- The Far-Infrared Spectra of Some Mixed Cobalt Zinc and Magnesium Zinc Ferrites 479
- Thermally Stimulated Depolarization for Quasi-Continuous Distribution of Relaxators according to Activation Energy and Frequency Factor 485
- Some Features of Acoustoelectronic Interaction in p-Te in Magnetic Field 491
- Grain Boundary Dislocation Observations Using the Field Ion Microscope 497
- Metamagnetism of Two-Sublattice Uniaxial Antiferromagnets 503
- Barium-Strontium Niobate Crystals for Optical Information Recording 513
- The Aluminium Thermal Conductivity and Deviation from Matthiessen's Rule 523
- Photoluminescent Methods for Determination of Graded Band-Gap Semiconductor Parameters 529
- Experimental and Simulated X-Ray Contrast of Striations for Nearly Plane Waves in the Laue Case 535
- Thermal Quenching of Photoluminescence in ZnS:Mn and ZnSerMn 545
- Excitations and Phases of Two-Beam Dynamical Bragg Reflection of X-Rays for Infinitely Thick Crystals 553
- Specific Heat, Debye Temperature, and Related Properties of Compound Semiconductors AIIBIVCV2 563
- H . A. SCHNEIDER 571
- Deep Level Spectroscopy and Schottky Barrier Characteristics of LPE n- and p-InP 583
- Magnetic Susceptibility and Electrical Properties of the x-Phase M017 O47 with Substitutions of Molybdenum 589
- New Phase Transitions in Arsenic Films 595
- An Interpretation of White (Synchrotron) X-Radiation Laue (Topograph) Patterns by Means of the Gnomonic Projection 601
- Impurity Profile on GaP Diodes in the Neighbourhood of a p-n Junction 609
- Luminescence oi Activated Alkali Halide Crystals at Excitation in the Fundamental Absorption Region 617
- Spatial Distributions of Channeled Ions 623
- A Simple Approach to Reactive Processes on the Interface during Crystal Growth 637
- Shallow Diffusions of Zinc in GaAs at 700 °C 643
- An Analytical Model of SEM and STEM Charge Collection Images of Dislocations in Thin Semiconductor Layers 649
- Effect of Temperature on the Dark and Photoconductivity of Metal-Free Phthalocyanine 659
- The Cation Distribution in the Spinel System Fe3-xGaxO4 669
- Laser Annealing of Thin Buried Amorphous Layers in Silicon 677
- Heavy Doping Effects in Bipolar Silicon Transistors and p-n Junction Silicon Solar Cells 683
- Structure of Pt75P25 Glass 695
- Mechanism of Charge Flow through the M-Ge3N4-GaAs Structure 701
- Acceptor Boron in α-SiC (6H): Investigation by the Photocapacitance Method 709
- Electronic Behaviour of SnS2 Crystals 717
- A New Method of Analysis of Traps Taking Part in the Electroluminescence Process 725
- Mössbauer Study of the Low-Temperature Phase of Magnetite 731
- Temperature Dependence of the Energy Gap in Pyrite (FeS2) 737
- Non-Stoichiometry and Electrical Conductivity of Strontium Mobates with Perovskite Structure 743
- Numerical Analysis of Step Junction pvn Diode with Different Lifetime Models 753
-
Short Notes
- Figures 761
- Spinodal Decomposition in Amorphous Boron -Implanted Iron Films 773
- TEM In-Situ Observation of Electromig ration in Al Stripes with Quasi-Bamboo Structure 777
- On the Composition and Crystallinity of the Titanium-Rich Second Phase in BaTiO3 Ceramic 779
- Electrical Properties of CdSe Thin Films 783
- New Reversal Process of Neel Walls Due to Nanosecond Field Pulses 787
- Commentaires sur la rèsistivité électrique des alliages Al-Zn et la décomposition spinodale 791
- Einige Bemerkungen zur Arbeit Commentaires sur la résistivité électrique des alliages Al-Zn et la décomposition spinodale / 1 / 797
- Photoluminescence in Spattered ZnO Thin Films 801
- Electrical Conductivity and Thermopower Measurements on Silver Doped Tellurium Films 805
- On the Transport Properties of Chromium-Aluminium Alloys at Low Temperatures 809
- Some Optical Properties of Thin Nickel Films 813
- Electrical Properties of CdP2 Single Crystals 819
- Phase Transitions in Iron Alloys 823
- Single Crystal Magnetic Studies on the y -Form of Bis N-Methylsalicylaldimine Copper (II) 827
- Photoconductivity and Anomalous Photovoltaic Effect in Cubic Piezoelectric La2S3 833
- On the Dielectric Properties of Tetracyanoquinodimethane (TCNQ) Salts with N-Methyl Derivatives of Pyridine 835
- Influence of Lattice Defects on the Superconducting Behaviour of Implanted PdHx Thin Film Layers 839
- Kossel Line Profiles near Dislocations in GaP 845
- Superconductive Compound Nb5Se2S2 with Ti5Te4 Structure 849
- Preparation and Properties of GaAsSb and GaAlAsSb Epi-Layers 853
- Erratum 859
- Pre-Printed Titles 861