Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas

Articles in the same Issue

1. Elementary processes in chemical dynamics
2. Chemical properties of small silicon clusters
3. Plasma deposition of semiconductor multilayer structures
4. Silent discharges for the generation of ultraviolet and vacuum ultraviolet excimer radiation
5. Effects of chemical reactions in arcs
6. Deposition of amorphous silicon alloys
7. A growth mechanism for the vacuum deposition of polymeric materials
8. Plasma etching and modification of organic polymers
9. Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
10. Electron energy distribution functions in processing plasmas
11. Modelling of chemical reactions under nonequilibrium halogenated electrical discharge conditions
12. Plasma and nitrides: application to the nitriding of titanium
13. ECR (electron cyclotron resonance) plasma for thin film technology
14. The effect of non-reactive ions on the properties of PECVD (plasma enhanced chemical vapor deposition) TEOS (tetraethoxysilane) oxides
15. Metallurgy of open-bath plasma processes
16. Properties of coatings and applications of low pressure plasma spray
17. Complex investigation of thermophysical processes in plasma-jet spraying
18. Plasma spraying as an advanced tool in surface engineering
19. Plasma synthesis of ceramic powders
20. Some aspects of the generalization of electric arc characteristics
21. Plasma spray consolidation of materials
22. Measurements of nonequilibrium effects in thermal plasmas
23. Polarographic half-wave potentials of cations in nonaqueous solvents