Article
Open Access
Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
-
M. Gholami
,
M. Esmaeili
Published/Copyright:
September 15, 2009
Published Online: 2009-9-15
Published in Print: 2009-9-1
© 2009 SEP, Warsaw
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Keywords for this article
optical efficiency;
photoluminescence (PL);
InGaNAs/GaAs single quantum well (SQW) nanostructures;
localized excitons;
full width at half maximum (FWHM);
PL integrated intensity;
thermal annealing
Creative Commons
BY-NC-ND 3.0
Articles in the same Issue
- Simplified coupling power model for fibers fusion
- Picture grammars in classification and semantic interpretation of 3D coronary vessels visualisations
- Determination of optical field generated by a microlens using digital holographic method
- Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication
- Improvement in dispersion tolerance of high-speed fiber optic transmission link by optimization of laser modulation
- Ytterbium doped phosphate glass photonic crystal fiber laser
- Identification of inherent noise components of semiconductor devices on an example of optocouplers
- A new phototransistor with uni-travelling-carrier and optically gradual coupling properties
- Portable electro-optic device for performing serviceability check on IR guided missiles
- Influence of quantum dots shape approximation on size reconstructed from atomic force microscopy measurements
- Double-frequency external cavity laser with a singular optical semiconductor amplifier
- Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
