Home Physical Sciences 4 Energy band gap variations in chalcogenide compound semiconductors: influence of crystal structure, structural disorder, and compositional variations
Chapter
Licensed
Unlicensed Requires Authentication

4 Energy band gap variations in chalcogenide compound semiconductors: influence of crystal structure, structural disorder, and compositional variations

  • Susan Schorr and Galina Gurieva
Become an author with De Gruyter Brill
Crystallography in Materials Science
This chapter is in the book Crystallography in Materials Science

Abstract

The high efficient thin-film solar cell technologies are based on chalcogenide compound semiconductor absorber layers. The aim of this chapter is to give an overview of the crystal structure, structural disorder, and intrinsic point defects of some important ternary and quaternary chalcogenide semiconductors applied successfully in thin-film photovoltaic (PV) technologies. The experimentally determined band gap energy, an important parameter of a PV device, is correlated to structural features in these semiconductor materials demonstrating the importance of the crystal structure for material properties.

Abstract

The high efficient thin-film solar cell technologies are based on chalcogenide compound semiconductor absorber layers. The aim of this chapter is to give an overview of the crystal structure, structural disorder, and intrinsic point defects of some important ternary and quaternary chalcogenide semiconductors applied successfully in thin-film photovoltaic (PV) technologies. The experimentally determined band gap energy, an important parameter of a PV device, is correlated to structural features in these semiconductor materials demonstrating the importance of the crystal structure for material properties.

Downloaded on 28.11.2025 from https://www.degruyterbrill.com/document/doi/10.1515/9783110674910-004/html
Scroll to top button