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Effect of chromium disorder on the thermoelectric properties of Layered-antiferromagnet CuCrS2
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Published/Copyright:
October 13, 2010
Abstract
Layered-antiferromagnetic compound CuCrS2 has been prepared by different methods. The analysis of X-ray diffraction patterns of different samples gave significant amount of vacancy-disorder of Cr-atoms within the layers. Extended period of sintering above 900 °C increases the transfer of Cr-atoms to the interstitial sites between the layers. This disorder has marginal effect on the Antiferromagnetic properties. The electrical conductivity is increased and the thermoelectric power remains positive and quite high between 150–400 μV/K in the paramagnetic state around room temperature with increase in disorder in different samples. We interpret the temperature dependence of electrical resistivity and thermoelectric power due to the localization of carriers by interstitial defects and the formation of magnetic polarons in the paramagnetic phase of CuCrS2.
Keywords: Crystallographic defects; Thermoelectric power; Magnetic Polarons; Transition-metal compounds.
Published Online: 2010-10-13
Published in Print: 2010-11
© by Oldenbourg Wissenschaftsverlag, New Delhi-110067, Germany
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Keywords for this article
Crystallographic defects;
Thermoelectric power;
Magnetic Polarons;
Transition-metal compounds.
Articles in the same Issue
- Preface: 3rd International Symposium on Structure-Property Relationships in Solid State Materials (SPSSM-2010)
- Structures and negative thermal expansion properties of the one-dimensional cyanides, CuCN, AgCN and AuCN
- From phase-change materials to thermoelectrics?
- Effect of chromium disorder on the thermoelectric properties of Layered-antiferromagnet CuCrS2
- Copper mobility in CuFeS2, a layered trigonal phase obtained from LiCuFeS2
- Local structure of TiNiCu(Hf) shape memory alloys: XAFS data analysis
- Ce valence in intermetallic compounds by means of XANES spectroscopy
- Correlation of the local and the macroscopic properties of high-temperature superconductors
- Coexistence of Charge Density Waves and d-Wave Superconductivity in Cuprates. Sharing of the Fermi Surface
- The coherent state and its relation to the flat/steep band model
- The layered ferromagnet Cs2AgF4: Antiferromagnetic inter-layer coupling driven by magnetic dipole-dipole interactions
- High-spin to Intermediate-spin Transition, Insulator-metal Transition, and Antiferro- to Ferromagnetic Transition in SrFeO2 under High Pressure
- Pressure effects on energy gaps and phase transitions in ZnAl2Se4
- The effect of pressure on the structural and electronic properties of yttrium orthovanadate YVO4 compound: total-energy calculations
- Relationship between microstructure and photocatalytic properties of nanomaterials
- Semiconductor photocatalysts for the visible light absorption from wide-gap semiconductors with dopant modification
- Filled platinum germanium skutterudites MPt4Ge12 (M = Sr, Ba, La—Nd, Sm, Eu): crystal structure and chemical bonding
