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The study of polytypism in silicon carbide by x-ray diffraction topography
Published/Copyright:
July 28, 2010
Abstract
Crystals of silicon carbide are often structurally inhomogeneous, consisting of a number of domains of different structures or polytypes. By the application of x-ray diffraction topography it is possible both to identify the polytypes present in a crystal and to determine the configuration of their domains. This method is illustrated by application to a crystal with epitaxial growth and a crystal with laminar domains of different polytypes.
Published Online: 2010-07-28
Published in Print: 1968-08
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Articles in the same Issue
- Inclined dislocations in apophyllite crystals
- Oriented transformation of lithiophorite
- Refraktionsmodifizierte Braggsche Beugung bei asymmetrischer Durchstrahl-Reflexion
- Notes on the size of transition-metal atoms
- Crystal structure of cadmium mercuric thiocyanate, CdHg(SCN)4
- Product of the normalized intensities in a test for isomorphism using higher moments of intensities*
- The unit cell of gaylussite
- The crystal structures and infra-red spectra of barium and strontium nitrates
- A comparison of some weighted Fourier syntheses with the summation method for vector convergence
- A modification to Patterson syntheses
- Verfeinerung der Struktur des Zinkhydroxidchlorids II, Zn5(OH)8Cl2 · 1H2O
- The Z expansion of the atomic scattering factor for the helium sequence*
- The crystal structure of vauquelinite and the relationships to fornacite
- The study of polytypism in silicon carbide by x-ray diffraction topography
- The neutron-scattering amplitude of potassium
- Errata: Refinement of the structure of scandium sesquioxide
