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Tuning the properties of RF sputtered tin sulphide thin films and enhanced performance in RF sputtered SnS thin films hetero-junction solar cell devices

  • Patrick Akata Nwofe EMAIL logo and Mutsumi Sugiyama
Published/Copyright: December 3, 2020
Zeitschrift für Naturforschung A
From the journal Zeitschrift für Naturforschung A Volume 76 Issue 2

Abstract

Tin sulphide (SnS) thin films were grown using the RF sputtering techniques. The working pressures (WP) were tuned between 0.70 and 4.00 Pa at fixed RF power of 100 W and deposition time of 2 min. X-ray diffractometry studies indicate that the films crystallized in the orthorhombic crystal structure and were single phase. The crystallite size increased up to a critical working pressure of 1.33 Pa and decreased thereafter with increased WP. Scanning electron microscopy (SEM) indicates that the films exhibit columnar grain structures. Energy dispersive spectroscopy indicates that the films are slightly Sn-rich. Transmittance and reflectance plots exhibits interference pattern, an indication that the films were of uniform thickness. Analysis from the optical data gives optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap that exhibits relative decrease with the deposition conditions. Electrical studies from Hall effect measurements indicates that the films possess p-type electrical conductivity, and carrier concentration of 1016 cm−3 for films grown at WP of 1.33 Pa. The RF sputtered SnS thin films grown on Mo-substrates served as absorber layers to fabricate thin film hetero-junction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short circuit current density of 25.94 mA/cm2, open circuit voltage of 0.087 V and an enhanced solar conversion efficiency of 0.60%. A world record value for RF-sputtered SnS/CdS based hetero-junction thin film solar cell devices.

Keywords: interference pattern; RF sputtering; SnS; solar conversion efficiency; working pressure
Corresponding author: Patrick Akata Nwofe, Faculty of Science and Technology, Department of Electrical Engineering, Tokyo University of Science, 20641 Yamazaki, Noda278-8510, Japan; and Faculty of Science, Department of Industrial Physics, Ebonyi State University, P.M.B 051, Abakaliki, Nigeria, E-mail:

Acknowledgments

Dr P.A. Nwofe remains grateful to Matsuame International Foundation (MIF), Japan for the award of Post-doctoral Research Fellowship; Sugiyama Laboratory, Tokyo University of Science Japan for host; and Ebonyi State University, Abakaliki, Nigeria for approval of study leave. The authors also acknowledge the contributions of T. Tosuke and T. Funatsu in the SEM measurements, Dr I. Khatri for the TCO and Dr J. Kim for useful discussions.

  1. Author contribution: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.

  2. Research funding: None declared.

  3. Conflict of interest statement: The authors declare no conflicts of interest regarding this article.

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Received: 2020-09-30
Accepted: 2020-11-15
Published Online: 2020-12-03
Published in Print: 2021-02-23

© 2020 Walter de Gruyter GmbH, Berlin/Boston

Articles in the same Issue

  1. Frontmatter
  2. Dynamical Systems & Nonlinear Phenomena
  3. In search of hyperchaos in a high dimensional unmagnetized quantum plasma
  4. Multistability and chaotic scenario in a quantum pair-ion plasma
  5. Dust-acoustic Gardner solitons in cryogenic plasma with the effect of polarization in the presence of a quantizing magnetic field
  6. Quantum Theory
  7. Trace dynamics and division algebras: towards quantum gravity and unification
  8. Solid State Physics & Materials Science
  9. Birefringence and order parameter studies in ferroelectric liquid crystals using laser transmission technique
  10. Investigations on the g factors and local structure for the trigonal Ce3+ center in YAl3(BO3)4 crystal
  11. Fiber-optic Fabry–Perot temperature sensor based on the ultraviolet curable glue-filled cavity and two-beam interference principle
  12. Tuning the properties of RF sputtered tin sulphide thin films and enhanced performance in RF sputtered SnS thin films hetero-junction solar cell devices
https://doi.org/10.1515/zna-2020-0275
Keywords for this article
interference pattern; RF sputtering; SnS; solar conversion efficiency; working pressure

Articles in the same Issue

  1. Frontmatter
  2. Dynamical Systems & Nonlinear Phenomena
  3. In search of hyperchaos in a high dimensional unmagnetized quantum plasma
  4. Multistability and chaotic scenario in a quantum pair-ion plasma
  5. Dust-acoustic Gardner solitons in cryogenic plasma with the effect of polarization in the presence of a quantizing magnetic field
  6. Quantum Theory
  7. Trace dynamics and division algebras: towards quantum gravity and unification
  8. Solid State Physics & Materials Science
  9. Birefringence and order parameter studies in ferroelectric liquid crystals using laser transmission technique
  10. Investigations on the g factors and local structure for the trigonal Ce3+ center in YAl3(BO3)4 crystal
  11. Fiber-optic Fabry–Perot temperature sensor based on the ultraviolet curable glue-filled cavity and two-beam interference principle
  12. Tuning the properties of RF sputtered tin sulphide thin films and enhanced performance in RF sputtered SnS thin films hetero-junction solar cell devices
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