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The effect of nitrogen addition to Ar/CH4 gas mixture on microstructural characterization of nanocrystalline diamond

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Published/Copyright: December 11, 2013
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Abstract

In the present study, nanocrystalline diamond (NCD) nanowire films were synthesized on silicon substrates, using microwave plasma-enhanced chemical vapor deposition (PECVD) with a CH4/Ar/N2 gas mixture at moderate temperatures. The influence of nitrogen concentration on the formation of NCD was investigated. The characteristics of NCD films were evaluated using scanning electron microscopy (SEM), Raman spectroscopy, optical emission spectroscopy (OES), and a contact angle meter. NCD nanowire films with 300–500 nm length were grown with the incorporation of nitrogen. Heterostructures of sp3-bonded diamond nanowires and sp2-bonded graphite were synthesized by adding small amounts of nitrogen to the CH4/Ar gas mixture. Surface roughness became smooth and the grain size decreased as the nitrogen was introduced into the CH4/Ar gas mixture. With the increase of nitrogen concentration, the sp2/sp3 ratio of carbon bonds increased. The wettability of the NCD nanowire films was sensitive to the bonding structure. The hydrophobic and non-reactive properties of NCD nanowire films make them highly applicable for biomedical implants.


Corresponding author: Pei-Wen Peng, School of Dental Technology, Taipei Medical University, Taipei 110, Taiwan, e-mail: ; and Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, Taipei 110, Taiwan
aThese authors contributed equally to this article.

Acknowledgments

The authors highly appreciate Mr. Wei-Hung Chang for his participation in experiments. The authors also acknowledge financial support of the research by the project of Taipei Medical University-Taipei Medical University Hospital, under the grant number of 100TMU-TMUH-08.

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Received: 2013-9-6
Accepted: 2013-11-18
Published Online: 2013-12-11
Published in Print: 2014-5-1

©2014 by Walter de Gruyter Berlin/Boston

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