Measurement of Deformed Aluminum Layer of Bond Pads in Cu-Wire Bonded Integrated Circuit Devices Using a Etching Approach

Jeromerajan Premkumar; Narasimalu Srikanth

doi:10.1515/pm-2008-0083

Article

Measurement of Deformed Aluminum Layer of Bond Pads in Cu-Wire Bonded Integrated Circuit Devices Using a Etching Approach

Jeromerajan Premkumar and Narasimalu Srikanth

Published/Copyright: March 7, 2022

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From the journal Practical Metallography Volume 45 Issue 11

Abstract

In the copper ball bond process, aluminum squeezes out under the ball deformation process since it is softer than copper. The final thickness of the copper ball decides the overall strength of the bond and hence knowledge of its final thickness helps to optimize the ball bond force during the bonding process. An etching method is developed for the analysis of the squeezed aluminum beneath the copper wire ball bond. The aluminum remnant obtained from the etching method is compared with that from the conventional cross-section method. It was found that the results are comparable and the present developed etched method is simple and elegant.

Kurzfassung

Bei dem Kupfer-Ball-Bond-Verfahren wird während des Kugelverformungsvorgangs Aluminium herausgedrückt, da es weicher als Kupfer ist. Über die Gesamtfestigkeit der Bondstelle entscheidet die Enddicke der Kupferkugel, und wenn man deren Enddicke kennt, lässt sich die Kugelbondkraft während des Bondvorgangs besser optimieren. Zur Analyse des herausgedrückten Aluminiums unter der Kupferdrahtbondkugel wird ein Ätzverfahren entwickelt. Das Restaluminium, das man bei dem Ätzverfahren erhält, wird mit demjenigen bei dem herkömmlichen Querschliffverfahren verglichen. Es wurde festgestellt, dass die Ergebnisse vergleichbar sind, und das vorliegende, entwickelte Ätzverfahren ist einfach und elegant.

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Übersetzung: A. Reichelt

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Received: 2007-03-06

Accepted: 2007-11-27

Published Online: 2022-03-07

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https://doi.org/10.1515/pm-2008-0083