Abstract
First- and second-order topological phases, capable of inherent protection against disorder of materials, have been recently experimentally demonstrated in various artificial materials through observing the topologically protected edge states. Topological phase transition represents a new class of quantum critical phenomena, which is accompanied by the changes related to the bulk topology of energy band structures instead of symmetry. However, it is still a challenge to directly observe the topological phase transitions defined in terms of bulk states. Here, we theoretically and experimentally demonstrate the direct observation of multifarious topological phase transitions with real-space indicator in a single photonic chip, which is formed by integration of 324 × 33 waveguides supporting both first- and second-order topological phases. The trivial-to-first-order, trivial-to-second-order and first-to-second-order topological phase transitions signified by the band gap closure can all be directly detected via photon evolution in the bulk. We further observe the creation and destruction of gapped topological edge states associated with these topological phase transitions. The bulk-state-based route to investigate the high-dimensional and high-order topological features, together with the platform of freely engineering topological materials by three-dimensional laser direct writing in a single photonic chip, opens up a new avenue to explore the mechanisms and applications of artificial devices.
1 Introduction
Topological phases, the core of fundamental description of characterizing the states of matter with global wave function [1, 2], have been rapidly developed for searching novel topological materials and applied in a variety of artificial topological systems [3–8]. Originating from the integer quantum Hall effect [9, 10], topological insulators, harnessing different topological phases [11] with bulk and edge properties, inherently enable the superior capabilities of lossless flowing of charges and information along surface. In addition to the fundamental physics, the unique robustness of topological phases and their transitions are predicted to be the promising candidate for fault-tolerant quantum computing [12] and superconductors [2]. Different from the conventional transition of phases of matter accompanied by the broken symmetry [13], the transition among different topological phases is particularly characterized by the discontinuous changes of topological invariants [3] with the closed band gap [1, 2], which still remains a long-standing challenge to detect.
Drawing inspiration from the topology in condensed matter, analogous effects in electrons have been elegantly mapped to photons [3–5], leading to advances related to the fascinating phenomena of robust unidirectional propagation of light against disorder and defects [14–20]. It holds enormous promise for the next generation of integrated circuits for routing light in classical [21] and quantum region [22–24]. Particularly, the exploration of first- and second-order topological phases [25–27] provides the topologically protected one-way channels in edges and corners for photonics systems, including topological insulator edge states [14–20] and second-order topological insulators [28–32] in multidimensional systems. It can be utilized for quantum information processing [22, 33], [34], [35] and developing the inherently robust photonic devices [36–39].
Compared with the wide investigation of topological phases with topologically protected edge and corner states [14], [15], [16], [17], [18], [19], [20, 28], [29], [30], [31], [32], the topological phase transitions defined in terms of bulk states in the photonic systems are rarely examined. For photons, it is challenging to resolve the wave functions defined in momentum space with bulk features of the systems. Recently, several progresses in exploring topological phase transition in photonic system have been proposed and implemented in 1D system, based on observing subgap states with adiabatically smooth edge [40, 41], dynamics with discrete quantum walk [42–46] and loss localized on sub-lattices [47, 48]. However, while entering into the realm of high dimensional and high order topology, the manipulation and manifestation of bulk topology for topological phase transition have not been explored yet.
Here, we theoretically and experimentally observe multifarious topological phase transitions with coexistence of three phases, including trivial phases, first- and second-order topological insulator phases. We design and fabricate 33 topologically-differential lattices, each containing 18 × 18 sites, which are all integrated in one chip using the femtosecond laser direct writing technique with flexible site-engineering fashion. The transition with the band gap closure in energy-momentum space is directly detected by the indicator of bulk propagation in real space.
2 Results
2.1 Model of TPTI
The topological lattices are all integrated in one femtosecond laser-written borosilicate silica chip [49, 50], as shown in Figure 1a. The two-dimensional (2D) topological model promoted from the one-dimensional dimer chain [51] could be described by
where C
†(C) is the creation (annihilation) operator of site (m, n) along (x, y) directions and t
x,y
represents the average hopping strength. The combination of Peierls distortions (−1)
m,n
and the dimerization Δt
x,y
determines the strong and weak couplings for intra-cell and inter-cell coupling for two directions, which can be modulated by the spacing between the nearest waveguides in the photonic lattices (see Figure 1b and c). The corresponding Hamiltonian in the momentum space can be expressed as a 4 × 4 matrix
![Figure 1:
Schematic of observing topological phase transition in highly integrated lattices.
(a) The photons are injected into the entrance waveguide in the central unit cell. All the large-scale topologically-differential lattices, possessing different topological phases, are integrated in a chip with the well-locked environment. (b) The micro crosssection of the topologically-differential lattice with gradually varying distortion. (c) Trivial phase, FOTI phase and SOTI phase are supported in the fabrication samples. The parameter t
x,y
= 0.3 and Δt
x,y
is smoothly modulated from −0.2 to 0.2. The unit of the coupling constants is [mm−1]. (d) Topological phase diagram characterized by the wave polarization. Trivial phase, FOTI phase and SOTI phase are marked in red, gray and blue regions, respectively.](/document/doi/10.1515/nanoph-2021-0559/asset/graphic/j_nanoph-2021-0559_fig_001.jpg)
Schematic of observing topological phase transition in highly integrated lattices.
(a) The photons are injected into the entrance waveguide in the central unit cell. All the large-scale topologically-differential lattices, possessing different topological phases, are integrated in a chip with the well-locked environment. (b) The micro crosssection of the topologically-differential lattice with gradually varying distortion. (c) Trivial phase, FOTI phase and SOTI phase are supported in the fabrication samples. The parameter t x,y = 0.3 and Δt x,y is smoothly modulated from −0.2 to 0.2. The unit of the coupling constants is [mm−1]. (d) Topological phase diagram characterized by the wave polarization. Trivial phase, FOTI phase and SOTI phase are marked in red, gray and blue regions, respectively.
Using the norm of the polarization in crystalline dielectrics [54], the phases can be characterized by the wave polarization
where
Topological phase transition is always accompanied with the energy band gap closing process [1, 2]. We numerically draw the energy band structure varying with Δt
x
and Δt
y
under the periodic boundary condition (depicted in Figure 2a). There are four energy bands in our model. For the topological phase transition between the trivial phase, Q = (0, 0), and the FOTI phase,
To unravel and visualize the aforementioned bulk band gap closure from momentum space to real-space observable, we employ the expected value of the square of position operator in long-time limit as an indicator. The square of position operator in our model is defined as
where
After propagating a long distance z, the diffraction behavior of photons can be characterized by the expected value of the square of position operator. This process is measured by:
where TPTI is the coupling-strength dependent quantity (see the Supplementary Material Section II for the relationship between topological phase transitions and TPTI in detail).
Simulated TPTI for characterizing the topological phase transition as a function of Δt x,y are shown in Figure 2b. The value of TPTI is higher when Δt x,y approaches to zero. For topological phase transition between trivial phase and FOTI phase along horizontal routes (FOTI phase and SOTI phase along vertical routes), the TPTI possesses a peak pinned at the turning point of Δt x = 0 (Δt y = 0). When trivial phase evolves to SOTI phase along the diagonal routes with simultaneous modulation for two directions, there is a higher peak located at the transition point of Δt x,y = 0 (see the Supplementary Material Section III for properties of TPTI in detail). In this way, the topological phase transition can be directly mapped to the peak indicator of TPTI observed in real space.

Topological phase transition and its indicator.
(a) The band structures in topological phase transition. The arrows indicate the phase transition among trivial, FOTI and SOTI phases. (b) The simulated results of TPTI as a function of Δt x,y . The dash line shows the phase transition trajectories detected in experiment.
2.2 Experimental observation of TPTI
In our experiment, to observe the topological phase transitions between multifarious topological phases, we implement integrated topological photonic lattices in an on-demand fashion by femtosecond laser direct writing (more details are shown in the Supplementary Materials). We set the case of trivial-to-first-order (first-to-second-order) by varying Δt
x
from −0.2 to 0.2 with a step of
The experimental results of TPTI for three cases are shown in Figure 3. The intensity distribution cannot show any clues for distinguishing the occurrence of topological phase transition with clear-cut evaluation. But there are three peaks for TPTI when the system suffers three topological phase transitions among trivial, FOTI and SOTI phases (see Figure 3a). During modulation of Δt x,y on the photonic chip, peaks of TPTI sign the topological phase transition points with band gap closure. It turns out that we can monitor the sudden change of the topology by TPTI in the topological phase transition process. In addition, the peak in the third transition case for SOTI to trivial phase is distinctly higher, as expected. Therefore, the band gap closing points defined in the momentum space for characterizing the topological phase transition is experimentally observed through the real space observable TPTI.

Experimental measurement of topological phase transition indicator.
(a) The measured TPTI as a function of Δt x and Δt y along the triangular trajectory shown in Figure 2(b). There are three peaks at the phase transition points where the system undergoes topological phase transitions. The evolution length for all the waveguide lattices is 14 mm. The error bar is originated from the fabrication shift of the waveguide lattices. (b) Output photon distribution of the waveguide lattices with the coupling strengths chosen as (i–ix) marked in (a), corresponding to (i) trivial phase, (ii) gap closing separating trivial and FOTI phases, (iii) FOTI phase, (iv) FOTI phase, (v) gap closing separating SOTI and FOTI phases, (vi) SOTI phase, (vii) SOTI phase, (viii) gap closing separating SOTI and trivial phases and (ix) trivial phase. The coupling strength t x,y = 0.3 mm−1. The unit of the coupling constants is mm−1.
One essential feature of topological phase transition is the creation and destruction of topologically protected edge states. To visualize the wave function for the edge states, we launch photons into the boundaries of the lattices and see the intensity distribution. The localization of the edge states can be quantified by generalized return probability [40]
We drive SOTI phase into FOTI phase by only decreasing Δt
y
from 0.2 to −0.04 and remain Δt
x
= 0.2, corresponding to the transition from

Experimental observation of creation and destruction of topological edge states. There are three detected trajectories for observing the creation and destruction of topological edge states under the modulation of Δt x,y . The process from SOTI to FOTI phases, from FOTI to trivial phases and from SOTI to trivial phases is marked by blue, red and gray dash lines, respectively. The red arrows indicate the launching positions
3 Conclusions and discussions
In summary, the observation of topological phase transition with full control of bulk topology and freely engineering fashion, including topological lattices with trivial, FOTI and SOTI phases, is fundamentally essential for understanding high-dimensional and high-order topological physics. The developed TPTI approach can directly identify the multifarious phase transitions based on the photon evolution pattern in 2D systems, instead of the complex statistical detection with multi-step and multi-time [42, 44, 45, 55]. The signal of topological phase transition is based on the excitation of bulk states with engineering of the spatial geometry, free of constructing adiabatically smooth boundary with stringent demand between topologically distinct phases [40].
The successful observation of the photon propagation mapping the band gap closure in the Hermitian system here may inspire the future exploration in the non-Hermitian systems [56], such as, metal-insulating phase transition in the non-Hermitian quasicrystals [57] and phase transition in parity-time-symmetric crystal [58]. Finally, our findings pave a novel avenue for exploring topological phase transitions in other artificial systems with high-dimension and high-order beyond photonics, such as phononic [59–62], microwave [63], electrical circuits [64, 65] and plasmon-polaritonic [66].
Funding source: National Natural Science Foundation of China http://dx.doi.org/10.13039/501100001809
Award Identifier / Grant number: No. 11690033
Award Identifier / Grant number: No. 11761141014
Award Identifier / Grant number: No. 12074234
Award Identifier / Grant number: No. 61734005
Award Identifier / Grant number: No. 11874260
Award Identifier / Grant number: No. 12034012
Funding source: Shanghai Municipal Education Commission
Award Identifier / Grant number: No. 2017- 01-07-00-02-E00049
Funding source: National Key R&D Program of China
Award Identifier / Grant number: No. 2017YFA0303700
Award Identifier / Grant number: No. 2019YFA0308700
Award Identifier / Grant number: No. 2019YFA0706302
Award Identifier / Grant number: No. 2017YFA0304203
Funding source: the Shanxi 1331KSC and 111 Project
Award Identifier / Grant number: No. D18001
Funding source: Science and Technology Commission of Shanghai Municipality
Award Identifier / Grant number: 20JC1416300
Award Identifier / Grant number: 2019SHZDZX01
Funding source: Program for Changjiang Scholars and Innovative Research Team in University
Award Identifier / Grant number: No. IRT17R70
Acknowledgments
The authors thank Jian-Wei Pan for helpful discussions.
-
Author contribution: All the authors have accepted responsibility for the entire content of this submitted manuscript and approved submission.
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Research funding: This research is supported by the National Key R&D Program of China (Grants No. 2019YFA0706302, No. 2019YFA0308700, No. 2017YFA0303700, and No. 2017YFA0304203), National Natural Science Foundation of China (Grants No. 11874260, No. 61734005, No. 11761141014, No. 11690033, No. 12034012 and No. 12074234), Science and Technology Commission of Shanghai Municipality (No. 2019SHZDZX01 and No. 20JC1416300), Shanghai Municipal Education Commission (Grants No. 2017-01-07-00-02-E00049), Program for Changjiang Scholars and Innovative Research Team in University (Grant No. IRT17R70), and the Shanxi 1331KSC and 111 Project (Grant No. D18001). X.-M.J. acknowledges additional support from a Shanghai talent program and support from Zhiyuan Innovative Research Center of Shanghai Jiao Tong University.
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Conflict of interest statement: The authors declare no conflicts of interest regarding this article.
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Supplementary Material
The online version of this article offers supplementary material (https://doi.org/10.1515/nanoph-2021-0559).
© 2021 Yong-Heng Lu et al., published by De Gruyter, Berlin/Boston
This work is licensed under the Creative Commons Attribution 4.0 International License.
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Articles in the same Issue
- Frontmatter
- Review
- Recent advances of wide-angle metalenses: principle, design, and applications
- Research Articles
- Conditions for establishing the “generalized Snell’s law of refraction” in all-dielectric metasurfaces: theoretical bases for design of high-efficiency beam deflection metasurfaces
- Highly ordered arrays of hat-shaped hierarchical nanostructures with different curvatures for sensitive SERS and plasmon-driven catalysis
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- Vector optomechanical entanglement
- Negative optical force field on supercavitating titanium nitride nanoparticles by a single plane wave
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