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The SnSSe SA with high modulation depth for passively Q-switched fiber laser

  • Jigen Chen EMAIL logo , Mengli Liu , Ximei Liu , Yuyi Ouyang , Wenjun Liu ORCID logo EMAIL logo and Zhiyi Wei
Published/Copyright: April 22, 2020
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Nanophotonics
From the journal Nanophotonics Volume 9 Issue 8

Abstract

IV–VI semiconductors have attracted widespread attention in basic research and practical applications, because of their electrical and optoelectronic properties comparable to graphene. Herein, an optical modulator based on SnSSe with strong nonlinearity is prepared by chemical vapor transfer method. The modulation depth of proposed SnSSe saturable absorber (SA) is up to 57.5%. By incorporating SnSSe SA into the laser, the Q-switched pulses as short as 547.8 ns are achieved at 1530.07 nm. As far as we know, this is the first successful application of SnSSe in Q-switched lasers. Our investigation not only prove the optical nonlinearity of SnSSe, but also reveal the potential of SnSSe SA in ultrafast photonics.

Keywords: two-dimensional nanomaterials; saturable absorbers; mode-locked laser; fiber lasers

1 Introduction

In the past few years, Q-switched fiber lasers (QSFL) have made a great progress in practical applications such as optical sensing, material processing, communication, and defense due to their unique advantages in high pulse energy, high cost performance, and compact structure [1], [2], [3], [4], [5]. Saturable absorber (SA) is recognized as the key device in passively QSFL, both the structure and categories of which have a crucial impact on the performance of lasers. Since the elimination of dyes, semiconductor saturable absorber mirror (SESAM) as a substitute has dominated the commercial market of SA for more than 20 years [6], the relaxation time, modulation depth, and operating wavelength of which can be accurately engineered. However, the drawbacks such as narrow operating bandwidth, high cost, complex manufacturing processes and low damage thresholds are gradually emerging in the applications and hinder its further development [7], [8], [9].

In recent years, some potential saturable materials with excellent properties have emerged as the times require. The excellent properties of ultrafast relaxation time, high damage threshold and broadband absorption capacity of graphene make it shine in the applications [10], [11], [12], [13]. In addition to graphene which has set off a research boom, other materials, such as transition metal dichalcogenides (TMDs), black phosphorus (BPs), and topological insulators [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24], [25], [26], [27], are gradually coming into view. In recent years, TMDs have been the focus of attention, because of the diversity of materials [25], [26], [27]. On the one hand, their classical layered structure facilitates the stripping of bulk one into few layers for high-performance optoelectronic devices. On the other hand, the band gap structure of TMDs, which has obvious changes in gap value and indirect-to-direct transition as the thickness decreases, results in some unique properties such as high third-order nonlinear and ultrafast relaxation systems. As the representative of TMDs, molybdenum disulfide (MoS2) has been widely concerned in optical nonlinearity [28], [29], [30]. It has been reported that the MoS2 nanosheet exhibits a remarkable saturated absorption at 800 nm, which is better than that of graphene [31], [32]. Moreover, the broadband absorption characteristics of MoS2 have been confirmed from the successful implement of QSFL from 1.06 to 2.1 μm [33].

As a TMD analogue, IV–VI semiconductors have become one of the choices due to their excellent characteristics. Because of the influence of the incorporation of sulfur in tin selenium (SnSe) on bandgap tailoring, this ternary compound SnSSe has recently attracted much interest in optoelectronic devices, and has been found to have some advantages in applications. Firstly, the raw materials of SnSSe are abundant and environmentally friendly, which is conducive to large-scale application and commercial production in the future. Secondly, according to the previous research, the interlayer spacing of SnSSe is increased by 2.84% compared with that of SnS2, which is helpful for the stripping of lamellar materials [34]. In addition, SnSSe grows preferentially along (001) crystal surface, which may be liable for the excellent electrochemical performances. SnSSe has been reported to deliver the highest capacities during the long-term cycling processes compared with other non-composite electrode materials (for example, MoS2, SnS2, SWCNT, and etc) [34]. The bandgap energy of 1.08 eV endows the unique advantages in thermoelectric converters and solar cells [35], [36].

In this paper, a stable passively QSFL based on the SnSSe SA is achieved for the first time. The SnSSe SA is manufactured by the chemical vapor transfer (CVT) method and features the large modulation depth up to 57.5%. The repetition rate adjustable from 116.4 to 261.1 kHz, the pulse duration as short as 547.8 ns, the signal-to-noise ratio (SNR) up to 55 dB and pulse energy of 42.79 nJ further confirm the impressive performance of the SnSSe SA in realizing QSFL. Results indicate that the SnSSe SA can be used as a potential nonlinear photonic device.

2 Preparation and characterization

The SnSSe was prepared by the CVT method which has been extensively used in the production of 2D materials with high quality. As previous researches have thoroughly introduced the technological process of CVT [37], we will not go into too much detail here. The prepared SnSSe nanosheets were transferred to the core region of fiber end face with the assistance of polymethyl methacrylate (PMMA) transfer technology. Subsequently, the organic PMMA was removed with acetone as a solvent. So far, the preparation of the SnSSe SA used in this work has been completed.

The surface morphology and thickness of the nanosheets were detected by atomic force microscopy (AFM). The resulting nanosheets are uniform as shown in Figure 1A. From the height difference reflected in Figure 1B, the thickness of SnSSe is about 115 nm. The Raman shift is shown in Figure 1C. The peaks Eg and A1g of SnSSe are located at 137 cm−1, 205 cm−1 and 304 cm−1, respectively [38], [39], [40]. The peak around 525 cm−1 shows silicon from the substrate [41]. The absorption spectrum of SnSSe is shown in Figure 1D. The X-ray photoelectron spectroscopy (XPS) is considered to be an effective method in the determination of elemental composition. The broadband XPS spectrum of SnSSe is shown in Figure 1E. In Figure 1F, the obvious peaks at 54.6 and 53.8 eV are from Se 3d3/2 and Se 3d5/2, which demonstrates the divalent selenium exists. Sn 3d spectrum is shown in Figure 1G, two separate peaks located at 495 and 486.6 eV are observed, which are characteristic peaks of Sn 3d3/2 and Sn 3d5/2. The distance difference between the two peaks is about 8.4, which demonstrates the existence of Sn. The characteristic peaks of Se 3p3/2, S 2p and Se 3p1/2 at 161.6 eV, 163 eV and 166.5 eV are observed in Figure 1H, which indicates that S and Se coexist in the sample. In summary, XPS shows the successful preparation of SnSSe.

Figure 1: The characterization of SnSSe.(A) AFM image, (B) Thickness, (C) Raman spectra, (D) Absorption spectrum, (E) Broadband XPS spectrum, (F) XPS spectrum of Se, (G) XPS spectrum of Sn, (H) XPS spectrum of Se-Sn, (I) Nonlinear absorption of SnSSe SA.
Figure 1:

The characterization of SnSSe.

(A) AFM image, (B) Thickness, (C) Raman spectra, (D) Absorption spectrum, (E) Broadband XPS spectrum, (F) XPS spectrum of Se, (G) XPS spectrum of Sn, (H) XPS spectrum of Se-Sn, (I) Nonlinear absorption of SnSSe SA.

By using the balanced twin detector method, the nonlinear absorption characteristics of the SnSSe SA is shown in Figure 1I. The modulation depth of the SnSSe SA is 57.5%, the saturable absorption intensity is 0.065 MW/cm2, and the non-saturated loss is 25.5%. The insertion loss of the SnSSe SA is 1.3 dB. As shown in Table 1, compared with other saturable absorbing materials, SnSSe has a prominent advantage in large modulation depth.

Table 1:

Nonlinear performance comparison of different SA

MaterialsModulation depth (%)Saturable absorption intensity (MW/cm2)Non-saturation lossRef.
SCNT0.94––[42]
MoS22101%[43]
MoSe26.73132.539.2%[30]
WS2227.2–[44]
WSe23.5103.975.1%[22]
BP8.37.9–[45]
SnS24.6125–[46]
SnSe26.38––[47]
CH3NH3PbI35.74380–[48]
Se2.13––[49]
SnS12.58350037.1%[50]
SnSSe57.50.06525.5%This work

3 Experiment

Passively QSFL is recognized as an important platform for testing the nonlinearity of SA. The SnSSe-SA is embedded in the erbium-doped fiber (EDF) laser in Figure 2. Wavelength division multiplexer (WDM) incorporates pump light centered at 980 nm into the annular cavity. The length of SMF-28 and EDF is 215 cm and 40 cm, respectively. An optical coupler (OC) with the 20% output ratio is placed after WDM, which is used to monitor the real-time state of output pulses. The polarization state of the light in the cavity and the working state of the system are optimized by fine tuning polarization controller (PC). An isolator (ISO) is added to the fiber laser to guarantee the unidirectional transmission of light.

Figure 2: Schematic diagram of QSFL based on SnSSe.
Figure 2:

Schematic diagram of QSFL based on SnSSe.

4 Results and discussion

When the pump power reaches 136.9mW, the Q-switched pulse train is observed on the oscilloscope. Figure 3 shows the various performance of QSFL when the pump power reaches 630 mW. The optical spectrum in Figure 3A indicates that the laser is centered at 1530.07 nm, and the 3 dB spectral width is 2.757 nm. Moreover, the shape of the spectrum remains basically the same in ongoing monitoring, which proves that the working state of the QSFL is stable. Figure 3B demonstrates the different states of QSFL on the oscilloscope at different pump powers. The repetition rate of the Q-switched pulse is reduced from 261.1 kHz to 159.2 kHz with the reduction of pump power from 630 mW to 244.2 mW. The pulse duration as short as 547.8 ns is obtained when the pump power is increased to the maximum of 630 mW in Figure 3C. In Figure 3D, the fundamental frequency of QSFL located at 271.13 kHz, the SNR is as high as 55 dB (RBW is 10 Hz, and the measurement span is 800 kHz), which proves the stability of this QSFL.

Figure 3: The performance of QSFL.(A) The optical spectrum. (B) The output pulse sequence at different pump power. (C) The pulse duration of QSFL. (D) RF spectrum.
Figure 3:

The performance of QSFL.

(A) The optical spectrum. (B) The output pulse sequence at different pump power. (C) The pulse duration of QSFL. (D) RF spectrum.

In Figure 4A, the repetition rate of the Q-switched pulse increases almost linearly with the increase of pump power from 148 mW to 630 mW. In the primary stage of pump power growth, the pulse duration changes greatly. After that, the change of the pulse duration gradually stabilizes. From Figure 4B, the pulse energy of QSFL changes from 14.51 nJ to 42.79 nJ with the increase of pump power. The maximum output power is 11.14 mW. The damage threshold of the SnSSe SA is about 67.45 mJ/cm2.

Figure 4: Effect of pump power on laser performance.The function of the pump power on (A) pulse duration, repetition rate and (B) output power, pulse energy.
Figure 4:

Effect of pump power on laser performance.

The function of the pump power on (A) pulse duration, repetition rate and (B) output power, pulse energy.

Table 2 demonstrates the performances of QSFLs using different 2D materials as SAs. From Table 2, the pulse duration of enumerated QSFLs are mostly in the μs-level, while that of the pulses obtained in our experiment are ns-level, which indicates that SnSSe-based QSFL has great potential in the achievement of ultrafast laser. As reported in Ref. [54], a high modulation depth is helpful to generate the relatively stable Q-switched pulses. From Table 2, we can see that the laser based on SnSSe with large modulation depth does show the maximum SNR of 55 dB, which indicates the remarkable stability of our Q-switched laser. The reason why the mode locking phenomenon is not observed here may be that the nonlinearity and dispersion are not balanced in this case.

Table 2:

Performance of QSFLs based on different SA.

Materialsτ (μs)SNR (dB)Output power (mW)Output energy (nJ)Ref.
BP13.245–94.3[51]
Bi2Se31.95480.4617.9[52]
MoS23.3–5.91160[43]
MoSe24.0431.32.45–[30]
WS22.643.14.1120[53]
WSe23.9846.71.2333.2[30]
SnSSe0.54785511.1442.79This work

5 Conclusion

In summary, a QSFL based on the SnSSe SA has been successfully achieved. The SnSSe SA which is prepared by CVT method has owned a large modulation depth of 57.5%. With the change of pump power, the repetition rate of passively QSFL can be adjusted in the range of 116.4 kHz–261.1 kHz. The SNR up to 55 dB has indicated the stability of the system. The maximum output power and pulse energy are 11.14 mW and 42.79 nJ. The minimum pulse duration of 547.8 ns has been proved to be almost at the optimal level. Therefore, as a promising material, SnSSe with strong nonlinearity may be a strong candidate for high performance optoelectronic devices, which also provides a new direction and opportunity for the development of next-generation materials-based devices.

Corresponding authors: Prof. Jigen Chen, Provincial Key Laboratory for Cutting Tools, Taizhou University, Taizhou 318000, China; and Prof. Wenjun Liu, State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; and State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Changsha, Hunan 410073, China

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) (Grants 11674036, 11875008 and 11975012, Funder Id: http://dx.doi.org/10.13039/501100001809), Beijing Youth Top Notch Talent Support Program (Grant 2017000026833ZK08), Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications, Grant IPOC2019ZZ01, Funder Id: http://dx.doi.org/10.13039/501100002766), Fundamental Research Funds for the Central Universities (Grant 500419305), State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University (Grant 2019GZKF03007, Funder Id: http://dx.doi.org/10.13039/501100004921); Beijing University of Posts and Telecommunications Excellent Ph.D. Students Foundation (Grant CX2019202, Funder Id: http://dx.doi.org/10.13039/501100002766); Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology (Grant SKL2018KF04).

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Received: 2020-02-13
Revised: 2020-03-03
Accepted: 2020-03-03
Published Online: 2020-04-22

© 2020 Jigen Chen, Wenjun Liu et al., published by De Gruyter, Berlin/Boston

This work is licensed under the Creative Commons Attribution 4.0 Public License.

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  13. Research Articles
  14. Ternary chalcogenide Ta2NiS5 nanosheets for broadband pulse generation in ultrafast fiber lasers
  15. All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5
  16. Dual-wavelength dissipative solitons in an anomalous-dispersion-cavity fiber laser
  17. Physical vapor deposition of large-scale PbSe films and its applications in pulsed fiber lasers
  18. Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth
  19. Resonance-enhanced all-optical modulation of WSe2-based micro-resonator
  20. Black phosphorus-Au nanocomposite-based fluorescence immunochromatographic sensor for high-sensitive detection of zearalenone in cereals
  21. Lanthanide Nd ion-doped two-dimensional In2Se3 nanosheets with near-infrared luminescence property
  22. Broadband spatial self-phase modulation and ultrafast response of MXene Ti3C2Tx (T=O, OH or F)
  23. PEGylated-folic acid–modified black phosphorus quantum dots as near-infrared agents for dual-modality imaging-guided selective cancer cell destruction
  24. Dynamic polarization attractors of dissipative solitons from carbon nanotube mode-locked Er-doped laser
  25. Environmentally stable black phosphorus saturable absorber for ultrafast laser
  26. MXene saturable absorber enabled hybrid mode-locking technology: a new routine of advancing femtosecond fiber lasers performance
  27. Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets
  28. Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering
  29. MoS2-based Charge-trapping synaptic device with electrical and optical modulated conductance
  30. Multifunctional black phosphorus/MoS2 van der Waals heterojunction
  31. MXene Ti3C2Tx saturable absorber for passively Q-switched mid-infrared laser operation of femtosecond-laser–inscribed Er:Y2O3 ceramic channel waveguide
  32. MXene: two dimensional inorganic compounds, for generation of bound state soliton pulses in nonlinear optical system
  33. Layered iron pyrite for ultrafast photonics application
  34. 2D molybdenum carbide (Mo2C)/fluorine mica (FM) saturable absorber for passively mode-locked erbium-doped all-fiber laser
  35. Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating
  36. Two-dimensional Au & Ag hybrid plasmonic nanoparticle network: broadband nonlinear optical response and applications for pulsed laser generation
  37. The SnSSe SA with high modulation depth for passively Q-switched fiber laser
  38. Palladium selenide as a broadband saturable absorber for ultra-fast photonics
  39. VS2 as saturable absorber for Q-switched pulse generation
  40. Highly stable MXene (V2CTx)-based harmonic pulse generation
  41. Simultaneously enhanced linear and nonlinear photon generations from WS2 by using dielectric circular Bragg resonators
  42. 2D tellurene/black phosphorus heterojunctions based broadband nonlinear saturable absorber
https://doi.org/10.1515/nanoph-2020-0113
Keywords for this article
two-dimensional nanomaterials; saturable absorbers; mode-locked laser; fiber lasers
Creative Commons
BY 4.0

Articles in the same Issue

  1. Reviews
  2. All-optical modulation with 2D layered materials: status and prospects
  3. Two-dimensional metal carbides and nitrides (MXenes): preparation, property, and applications in cancer therapy
  4. Novel two-dimensional monoelemental and ternary materials: growth, physics and application
  5. Solution-processed two-dimensional materials for ultrafast fiber lasers (invited)
  6. Recent advances on hybrid integration of 2D materials on integrated optics platforms
  7. Recent progress of pulsed fiber lasers based on transition-metal dichalcogenides and black phosphorus saturable absorbers
  8. Two-dimensional MXene-based materials for photothermal therapy
  9. Advances in inorganic and hybrid perovskites for miniaturized lasers
  10. Visible-wavelength pulsed lasers with low-dimensional saturable absorbers
  11. Hybrid silicon photonic devices with two-dimensional materials
  12. Recent advances in mode-locked fiber lasers based on two-dimensional materials
  13. Research Articles
  14. Ternary chalcogenide Ta2NiS5 nanosheets for broadband pulse generation in ultrafast fiber lasers
  15. All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5
  16. Dual-wavelength dissipative solitons in an anomalous-dispersion-cavity fiber laser
  17. Physical vapor deposition of large-scale PbSe films and its applications in pulsed fiber lasers
  18. Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth
  19. Resonance-enhanced all-optical modulation of WSe2-based micro-resonator
  20. Black phosphorus-Au nanocomposite-based fluorescence immunochromatographic sensor for high-sensitive detection of zearalenone in cereals
  21. Lanthanide Nd ion-doped two-dimensional In2Se3 nanosheets with near-infrared luminescence property
  22. Broadband spatial self-phase modulation and ultrafast response of MXene Ti3C2Tx (T=O, OH or F)
  23. PEGylated-folic acid–modified black phosphorus quantum dots as near-infrared agents for dual-modality imaging-guided selective cancer cell destruction
  24. Dynamic polarization attractors of dissipative solitons from carbon nanotube mode-locked Er-doped laser
  25. Environmentally stable black phosphorus saturable absorber for ultrafast laser
  26. MXene saturable absorber enabled hybrid mode-locking technology: a new routine of advancing femtosecond fiber lasers performance
  27. Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets
  28. Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering
  29. MoS2-based Charge-trapping synaptic device with electrical and optical modulated conductance
  30. Multifunctional black phosphorus/MoS2 van der Waals heterojunction
  31. MXene Ti3C2Tx saturable absorber for passively Q-switched mid-infrared laser operation of femtosecond-laser–inscribed Er:Y2O3 ceramic channel waveguide
  32. MXene: two dimensional inorganic compounds, for generation of bound state soliton pulses in nonlinear optical system
  33. Layered iron pyrite for ultrafast photonics application
  34. 2D molybdenum carbide (Mo2C)/fluorine mica (FM) saturable absorber for passively mode-locked erbium-doped all-fiber laser
  35. Ultrasensitive graphene position-sensitive detector induced by synergistic effects of charge injection and interfacial gating
  36. Two-dimensional Au & Ag hybrid plasmonic nanoparticle network: broadband nonlinear optical response and applications for pulsed laser generation
  37. The SnSSe SA with high modulation depth for passively Q-switched fiber laser
  38. Palladium selenide as a broadband saturable absorber for ultra-fast photonics
  39. VS2 as saturable absorber for Q-switched pulse generation
  40. Highly stable MXene (V2CTx)-based harmonic pulse generation
  41. Simultaneously enhanced linear and nonlinear photon generations from WS2 by using dielectric circular Bragg resonators
  42. 2D tellurene/black phosphorus heterojunctions based broadband nonlinear saturable absorber
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