10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 µm SiGe BiCMOS Technology

References

[1] N. Pohl, T. Klein, K. Aufinger, and H.-M. Rein, “A low-power wideband transmitter front-end chip for 80 GHz FMCW radar systems with integrated 23 GHz downconverter VCO,” IEEE J. Solid-State Circuits, vol. 47, pp. 1974–1980, Sept. 2012.10.1109/JSSC.2012.2201272Search in Google Scholar

[2] S. Pruvost, I. Telliez, F. Danneville, G. Dambrine, and M. Laurens, “A 40GHz superheterodyne receiver integrated in 0.13 µm BiCMOS SiGe:C HBT technology,” in Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 9–11 Oct. 2005, pp. 10–13.Search in Google Scholar

[3] J. Powell, H. Kim, and C. G. Sodini, “SiGE receiver front ends for millimeter-wave passive imaging,” IEEE Trans. Microw. Theory Tech., vol. 56, pp. 2416–2425, Nov. 2008.10.1109/TMTT.2008.2006103Search in Google Scholar

[4] D. Kissinger, B. Sewiolo, H.-P. Forstner, L. Maurer, and R. Weigel, “A fully differential low-power high-linearity 77-GHz SiGe receiver frontend for automotive radar systems,” in IEEE 10th Annual Wireless and Microwave Technology Conference, Clearwater, FL, Apr. 2009.10.1109/WAMICON.2009.5207253Search in Google Scholar

[5] F. Aflatouni and H. Hashemi, “A low power Ka-band receiver front-end in 0.13 µm SiGe BiCMOS for space transponders,” in IEEE Annual Compound Semiconductor Integrated Circuit Symposium, Greensboro, NC, 11–14 Oct. 2009, pp. 1–4.10.1109/csics.2009.5315570Search in Google Scholar

[6] A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, “A 68–82 GHz integrated wideband linear receiver using 0.18 µm SiGe BiCMOS,” in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Anaheim, CA, 23–25 May 2010, pp. 365–368.10.1109/RFIC.2010.5477281Search in Google Scholar

[7] D. Ma, F. F. Dai, R. C. Jaeger, and J. D. Irwin, “An X- and Ku-band wideband recursive receiver MMIC with gain-reuse,” IEEE J. Solid-State Circuits, vol. 46, pp. 562–571, Mar. 2011.10.1109/JSSC.2010.2099452Search in Google Scholar

[8] L. E. Milner, L. T. Hall, M. E. Parker, M. G. McCulloch, and S. J. Mahon, “Linearity of a Ka band SiGe receiver,” in 1st Australian Microwave Symposium (AMS), Melbourne, VIC, 26–27 June 2014, pp. 37–38.10.1109/AUSMS.2014.7017354Search in Google Scholar

[9] S. S. H. Hsu, P.-Y. Wang, P.-C. Su, M.-C. Chou, Y.-C. Chang, and D.-C. Chang, “Design of Ku/Ka band down-converter front-end for digital broadcast satellite receivers,” in IEEE International Wireless Symposium (IWS), Shenzhen, Mar. 30–Apr. 1, 2015.Search in Google Scholar

[10] P.-Y. Wang, T.-L. Wu, M.-C. Chou, M.-Y. Chen, Y.-C. Chang, D.-C. Chang, and S. S. H. Hsu, “Design of wideband sub-harmonic receiver front-end using 0.18-µm BiCMOS technology,” in IEEE International Wireless Symposium (IWS), Shenzhen, Mar. 30–Apr. 1, 2015.10.1109/IEEE-IWS.2015.7164610Search in Google Scholar

[11] S. T. Nicolson, P. Chevalier, B. Sautreuil, and S. P. Voinigescu, “Single-chip W-band SiGE HBT transceivers and receivers for Doppler radar and millimeter-wave imaging,” IEEE J. Solid-State Circuits, vol. 43, pp. 2206–2217, Oct. 2008.10.1109/JSSC.2008.2002934Search in Google Scholar

[12] V. Jain, F. Tzeng, L. Zhou, and P. Heydari, “A single-chip dual-band 22–29-GHz/77–81-GHz BiCMOS transceiver for automotive radars,” IEEE J. Solid-State Circuits, vol. 44, pp. 3469–3485, Dec. 2009.10.1109/JSSC.2009.2032583Search in Google Scholar

[13] C. Bredendiek, N. Pohl, T. Jaeschke, S. Thomas, K. Aufinger, and A. Bilgic, “A 24GHz wideband single-channel SiGe bipolar transceiver chip for monostatic FMCW radar systems,” in 7th European Microwave Integrated Circuits Conference (EuMIC), (Amsterdam), Oct. 2012, pp. 309–312.10.1017/S1759078713000391Search in Google Scholar

[14] C. Liu, Q. Li, Y. Li, X.-D. Deng, X. Li, H. Liu, and Y.-Z. Xiong, “A fully integrated X-band phased-array transceiver in 0.13-µm SiGE BiCMOS technology,” IEEE Trans. Microw. Theory Tech, vol. 64, pp. 575–584, Feb. 2016.10.1109/TMTT.2015.2504977Search in Google Scholar

[15] R. Chan and M. Feng, “Low noise and high gain wideband amplifier using SiGe HBT technology,” in IEEE MTT-S International Microwave Symposium Digest, Fort Worth, TX, USA, Vol. 1, 6–11 June 2004, pp. 21–24.Search in Google Scholar

[16] A. Ismail and A. A. Abidi, “A 3–10-GHz low-noise amplifier with wideband LC-ladder matching network,” IEEE J. Solid-State Circuits, vol. 39, pp. 2269–2277, Dec. 2004.10.1109/JSSC.2004.836344Search in Google Scholar

[17] B. Shi and Y. W. Chia, “A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers,” in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, San Francisco, CA, 10–13 June 2006.Search in Google Scholar

[18] D. C. Howard, J. Poh, T. S. Mukerjee, and J. D. Cressler, “A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications,” in IEEE International Midwest Symposium on Circuits and Systems, Seattle, WA, pp. 445–448, 1–4 Aug. 2010.10.1109/MWSCAS.2010.5548729Search in Google Scholar

[19] D. Lin, B. Schleicher, A. Trasser, and H. Schumacher, “A highly compact SiGe HBT differential LNA for 3.1–10.6 GHz ultra-wideband applications,” in IEEE International Conference on Ultra-Wideband (ICUWB), Nanjing, 20–23 Sept. 2010, pp. 1–4.10.1109/ICUWB.2010.5614154Search in Google Scholar

[20] P. K. Saha, S. Shankar, R. Schmid, R. Mills, and J. D. Cressler, “Analysis and design of a 3–26 GHz low-noise amplifier in SiGe HBT technology,” in IEEE Radio and Wireless Symposium (RWS), Santa Clara, CA, pp. 203–206, Jan. 2012.10.1109/RWS.2012.6175372Search in Google Scholar

[21] A. Bevilacqua and A. M. Niknejad, “An ultrawideband CMOS low-noise amplifier for 3.1–10.6-GHz wireless receivers,” IEEE J. Solid-State Circuits, vol. 39, pp. 2259–2268, Dec. 2004.10.1109/JSSC.2004.836338Search in Google Scholar

[22] J. Lee and Y. Kim, “CMOS low noise amplifier design techniques using shunt resistive feedback,” in Asia-Pacific Microwave Conference Proceedings, Suzhou, Dec. 2005.Search in Google Scholar

[23] Y. Lu, K. S. Yeo, A. Cabuk, J. Ma, M. A. Do, and Z. Lu, “A novel CMOS low-noise amplifier design for 3.1-To 10.6-GHz ultra-wide-band wireless receiver,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 53, pp. 1683–1692, Aug. 2006.10.1109/TCSI.2006.879059Search in Google Scholar

[24] C.-H. Chen, H.-C. Hsu, and W.-S. Feng, “A 10~30-GHz CMOS distributed amplifier for UWB applications,” in International Conference on Microwave and Millimeter Wave Technology (ICMMT), Chengdu, 8–11 May 2010, pp. 266–269.10.1109/ICMMT.2010.5524926Search in Google Scholar

[25] P.-C. Huang, R.-C. Liu, J.-H. Tsai, H.-Y. Chang, H. Wang, J. Yeh, C.-Y. Lee, and J. Chern, “A compact 35–65 GHz up-conversion mixer with integrated broadband transformers in 0.18-µm SiGe BiCMOS technology,” in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, San Francisco, CA, June 2006.Search in Google Scholar

[26] S. Trotta, B. Dehlink, H. Knapp, K. Aufinger, T. F. Meister, J. Böck, W. Simbürger, and A. L. Scholtz, “Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology,” in 33rd European Solid State Circuits Conference, Munich, Sept. 2007, pp. 356–359.10.1109/ESSCIRC.2007.4430317Search in Google Scholar

[27] V. Issakov, H. Knapp, M. Tiebout, A. Thiede, W. Simbürger, and L. Maurer, “Comparison of 24 GHz low-noise mixers in CMOS and SiGe:C technologies,” in European Microwave Integrated Circuits Conference, Rome, Sept. 2009, pp. 184–187.Search in Google Scholar

[28] M. Ko, H. Rücker, and W.-Y. Choi, “A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth,” in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), New Orleans, LA, Jan. 2010, pp. 73–76.10.1109/SMIC.2010.5422955Search in Google Scholar

[29] C. Huynh, J. Lee, and C. Nguyen, “A K-band SiGe BiCMOS fully integrated up-conversion mixer,” in Asia-Pacific Microwave Conference Proceedings (APMC), Seoul, Nov. 2013, pp. 185–187.10.1109/APMC.2013.6695088Search in Google Scholar

[30] S. Yuan and H. Schumacher, “Novel frequency quadrupler design covering the entire V–band in 0.13–µm SiGe process,” in IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Newport Beach, CA, 19–23 Jan. 2014, pp. 101–103.10.1109/SiRF.2014.6828509Search in Google Scholar

[31] F. S. Lee and A. P. Chandrakasan, “A BiCMOS ultra-wideband 3.1–10.6-GHz front-end,” IEEE J. Solid-State Circuits, vol. 41, pp. 1784–1791, Aug. 2006.10.1109/JSSC.2006.877270Search in Google Scholar