Home Investigation of GaN-HEMT Based Switches
for Hybrid Switching Amplifier Supply-Modulators
Article
Licensed
Unlicensed Requires Authentication

Investigation of GaN-HEMT Based Switches
for Hybrid Switching Amplifier Supply-Modulators

  • Robert Perea-Tamayo , Martin Krellmann , Olof Bengtsson EMAIL logo , Per N. Landin and Wolfgang Heinrich
Published/Copyright: December 12, 2012
Become an author with De Gruyter Brill

Abstract

An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current and 10 MHz bandwidth. GaN-HEMT switch designs with alternative gate drive circuitry are investigated with regard to power, efficiency and linearity under different load conditions using simulations and measurements of the fabricated circuits. The full HSA showed an efficiency of 49.7% for a WCDMA envelope. A modified switching stage with improved gate-drive circuitry shows 85% efficiency in a 15 V buck-converter test-circuit for a 10 V conversion at 1 MHz over a 15 Ω load.


Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Received: 2012-07-30
Published Online: 2012-12-12
Published in Print: 2012-12-12

©[2012] by Walter de Gruyter Berlin Boston

Downloaded on 10.9.2025 from https://www.degruyterbrill.com/document/doi/10.1515/freq-2012-0100/html
Scroll to top button