Home A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
Article
Licensed
Unlicensed Requires Authentication

A full-process chain assessment for nanoimprint technology on 200-mm industrial platform

  • Hubert Teyssedre EMAIL logo , Stefan Landis , Christine Thanner , Maria Laure , Jonas Khan , Sandra Bos , Martin Eibelhuber , Mustapha Chouiki , Michael May , Pierre Brianceau , Olivier Pollet , Jerome Hazart , Cyrille Laviron , Laurent Pain and Markus Wimplinger
Published/Copyright: May 10, 2017
Become an author with De Gruyter Brill

Abstract

To evaluate the maturity of the wafer-scale NanoImprint lithography (NIL) process, laboratory of electronic and communication technology (LETI) and EV Group (EVG) launched the Imprint Nanopatterning Solution Platform for Industrial Assessment program (INSPIRE), which aims at building a nanoimprint solution platform for industrial assessment and provide a unique open ecosystem for the standardization of the nanoimprint process. This program enabled to gather EVG know-how for the tool manufacturing and its long expertise in bonding activities, and the established methods and advanced microelectronic environment. Presented as an upstream phase, metrology and defectivity were performed on dedicated assessment designs to address critical dimension uniformity (CDU) at wafer scale for a large number of imprints, defectivity on imprints and masters, and alignment capabilities of the nanoimprint HERCULES® platform of EVG. We demonstrate that the critical points are the anti-sticking layer for the defectivity, the CD shrinkage for the CDU, and the stiffness of the soft stamp for the overlay uniformity. Thus, we bring to light the actual capabilities of the HERCULES® platform, and open the discussions on the opportunities for this technology with the possible improvements for the process.

Acknowledgment

This work has been made possible, thanks to the inspire program.

References

[1] M. Beck and B. Heidari, OnBoard Technology, 52–55 (September 2006). Available at: http://www.onboard-technology.com/pdf_settembre2006/090609.pdf.Search in Google Scholar

[2] T. Eriksson, S. Yamada, P. V. Krishnan, S. Ramasamy and B. Heidari, Microelectron. Eng. 88, 293 (2011).10.1016/j.mee.2010.11.024Search in Google Scholar

[3] T. Takashima, Y. Takabayashi, N. Nishimura, K. Emoto, T. Matsumoto, et al., in ‘SPIE Advanced Lithography’, (International Society for Optics and Photonics, 2016) pp. 977706–977706.10.1117/12.2219001Search in Google Scholar

[4] U. Plachetka, M. Bender, A. Fuchs, B. Vratzov, T. Glinsner, et al., Microelectron. Eng. 73, 167 (2004).10.1016/S0167-9317(04)00093-0Search in Google Scholar

[5] M. Colburn, S. C. Johnson, M. D. Stewart, S. Damle, T. C. Bailey, et al., in ‘Microlithography’99’, (International Society for Optics and Photonics, 1999) pp. 379–389.Search in Google Scholar

[6] M. Malloy and L. C. Litt, J. Micro Nanolithogr. MEMS MOEMS 10, 032001 (2011).10.1117/1.3642641Search in Google Scholar

[7] B. Hoefflinger, in ‘Chips 2020’, (Springer Berlin Heidelberg, 2011) pp. 161–174.10.1007/978-3-642-23096-7_7Search in Google Scholar

[8] R. Ji, M. Hornung, M. A. Verschuuren, R. van de Laar, J. van Eekelen, et al., Microelectron. Eng. 87, 963 (2010).10.1016/j.mee.2009.11.134Search in Google Scholar

[9] C.-Y. Chao and L. J. Guo, J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. 20, 2862 (2002).10.1116/1.1521729Search in Google Scholar

[10] M. C. McAlpine, R. S. Friedman and C. M. Lieber, Nano Lett. 3, 443 (2003).10.1021/nl034031eSearch in Google Scholar

[11] S. Landis, P. Brianceau, V. Reboud, N. Chaix, Y. Désières, et al., Microelectron. Eng. 111, 193 (2013).10.1016/j.mee.2013.03.153Search in Google Scholar

[12] D. Truffier-Boutry, A. Beaurain, R. Galand, B. Pelissier, J. Boussey, et al., Microelectron. Eng. 87, 122 (2010).10.1016/j.mee.2009.06.004Search in Google Scholar

[13] S. Singh, S. Chen, K. Selinidis, B. Fletcher, I. McMackin, et al., in ‘SPIE Advanced Lithography’, (International Society for Optics and Photonics, 2009) pp. 72712H–72712H.10.1117/12.814290Search in Google Scholar

[14] T. Hiraka, J. Mizuochi, Y. Nakanishi, S. Yusa, S. Sasaki, et al., in ‘SPIE Photomask Technology’, (International Society for Optics and Photonics, 2009) pp. 74880T–74880T.10.1117/12.834581Search in Google Scholar

[15] F. Hua, Y. Sun, A. Gaur, M. A. Meitl, L. Bilhaut, et al., Nano Lett. 4, 2467 (2004).10.1021/nl048355uSearch in Google Scholar

[16] H. Teyssedre, S. Landis, C. Thanner, V. Schauer, M. Laure, et al., in ‘32nd European Mask and Lithography Conference’, (International Society for Optics and Photonics, 2016) pp. 100320M–100320M.10.1117/12.2250194Search in Google Scholar

[17] H. Yoon, S. H. Lee, S. H. Sung, K. Y. Suh and K. Char, Langmuir 27, 7944 (2011).10.1021/la201425vSearch in Google Scholar

[18] H. Taylor and D. Boning, in ‘SPIE Advanced Lithography’, (International Society for Optics and Photonics, 2010) pp. 76410U–76410U.10.1117/12.846499Search in Google Scholar

[19] H. Teyssedre, S. Landis, P. Brianceau, M. Mayr, C. Thanner, et al., in ‘SPIE Advance Lithography Conference 2017’, (under reviewing, February 2017).Search in Google Scholar

[20] A. Lebib, Y. Chen, J. Bourneix, F. Carcenac, E. Cambril, et al., Microelectron. Eng. 46, 319 (1999).10.1016/S0167-9317(99)00094-5Search in Google Scholar

[21] W. Zhang and S. Y. Chou, Appl. Phys. Lett. 79, 845 (2001).10.1063/1.1391400Search in Google Scholar

[22] K. Fukuhara, M. Suzuki, M. Mitsuyasu, T. Komukai, M. Hatano, et al., J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom 34, 06K405 (2016).10.1116/1.4963190Search in Google Scholar

Published Online: 2017-5-10
Published in Print: 2017-6-27

©2017 THOSS Media & De Gruyter, Berlin/Boston

Downloaded on 7.9.2025 from https://www.degruyterbrill.com/document/doi/10.1515/aot-2017-0018/pdf
Scroll to top button