Home EUV mask defectivity – a process of increasing control toward HVM
Article
Licensed
Unlicensed Requires Authentication

EUV mask defectivity – a process of increasing control toward HVM

  • Rik Jonckheere

    Rik Jonckheere is senior researcher mask technology in the Advanced Patterning Department at imec. He holds a Masters Degree in Solid-State Physics (1984). He joined imec in 1985 and has been working on e-beam direct write and experimental mask making. For 20 years he has been driving the interactions of imec’s Advanced Lithography Program with the mask making community. Over the past 10 years his focus gradually has become EUV mask defectivity, its printability and its mitigation.

     EMAIL logo
Published/Copyright: June 8, 2017
Become an author with De Gruyter Brill
Author Information
Advanced Optical Technologies
From the journal Advanced Optical Technologies Volume 6 Issue 3-4

Abstract

This article covers the various aspects of defectivity of a typical mask used for extreme ultra-violet (EUV) lithography. The focus of the present article is on those aspects that are more specific for EUV lithography. A prime type of defect that fully falls under the really EUV-specific category consists of the so-called multilayer defects (ML-defects): these defects relate to the ML mirror on the mask, which makes it reflective. While not specific, particle contamination plays a special role in EUV lithography and includes two aspects: both front- and backside of an EUV mask have peculiarities beyond historical deep-UV lithography. Frontside particles can print when they exceed a critical size and, while solvable as in (deep)-UV lithography by means of a pellicle, there are specific challenges. Backside particles can distort a clamped EUV reticle, and the resulting local non-flatness of the reticle may result in focus and overlay errors on the wafer. A last aspect that requires special attention for EUVL can be categorized under reticle degradation by extensive use. That includes the high-volume manufacturing-oriented conditions of high source power needed to obtain competitive throughput. For each aspect of EUV mask defectivity, and hence each type of defect, the paper reviews how the community tackles them and how their possible impact on the result of wafer printing with a given EUV reticle is minimized. This includes a summary of the authors’ own contribution to related learning and developments. Finally, a personal interpretation is given of what are the remaining open items before a workable or full solution can be considered in place.

Keywords: contamination; EUV lithography; mask defects; ML-defects; particles

About the author

Rik Jonckheere

Rik Jonckheere is senior researcher mask technology in the Advanced Patterning Department at imec. He holds a Masters Degree in Solid-State Physics (1984). He joined imec in 1985 and has been working on e-beam direct write and experimental mask making. For 20 years he has been driving the interactions of imec’s Advanced Lithography Program with the mask making community. Over the past 10 years his focus gradually has become EUV mask defectivity, its printability and its mitigation.

Acknowledgment

This invited article gives a review from an expert perspective. This personal viewpoint does not necessarily reflect a company opinion about the subject. Such expert opinion, when expressed to the community, as in the present article, could trigger dedicated discussion among professionals active in a similar field. This could lead to (even) more sound solutions than are presently already in place, under development, or, at least, under consideration. Logically, this published opinion builds on experience gathered on this subject as an employee of imec, based on the opportunities defined by the available tool set and on the network capabilities with external parties, as an independent R&D entity. A publication with a similar broad coverage of the different aspects of EUV mask defectivity and the availability of appropriate infrastructure was made by Liang in late 2015 [59] and is recommended as another expert review, from a different perspective.

References

[1] Steering Committee communication, Int. Symp. on EUV Lithography (2016).Search in Google Scholar

[2] R. Jonckheere, F. Iwamoto, G. F. Lorusso, A. M. Goethals, K. Ronse, et al., Proc. SPIE 6730-12 (2007).10.1117/12.746566Search in Google Scholar

[3] R. Jonckheere, F. Iwamoto, G. F. Lorusso, A. M. Goethals and K. Ronse, in ‘Int. Symp. on EUV Lithography’ (2007).Search in Google Scholar

[4] R. Jonckheere, T. Waehler, B. Baudemprez, U. Dietze, P. Dress, et al., Proc. SPIE 8352-0U (2012).10.1117/12.923321Search in Google Scholar

[5] SEMI standard E152.Search in Google Scholar

[6] O. Brux, P. Dreß, H. Schmalfuß, R. Jonckheere, W. Koolen-Hermkens, et al., Proc. SPIE 8441-1J (2012).10.1117/12.978198Search in Google Scholar

[7] R. Jonckheere, B. Baudemprez, T. Waehler, D. Van den Heuvel, H. Schmalfuß, et al., in ‘Int. Symp. on EUV Lithography’ (2012).Search in Google Scholar

[8] R. Jonckheere, D. van den Heuvel, B. Baudemprez, C. Jehoul and A. Pacco, in ‘Int. Symp. on EUV Lithography’ (2013).Search in Google Scholar

[9] P. Jansen, D. Brouns, A. Bendiksen, P. Broman, E. Casimiri, et al., in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[10] B. Turkot, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[11] Y. Hyun, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[12] Y. Hyun, J. Kim, K. Kim, S. Koo, S. Kim, et al., Proc. SPIE 9422-1U (2015).10.1117/12.2085626Search in Google Scholar

[13] D. Van den Heuvel, R. Jonckheere, B. Baudemprez, S. Cheng, G. Marcuccilli, et al., Proc. SPIE 8324-0L (2012).10.1117/12.916979Search in Google Scholar

[14] S. Mangan, R. Jonckheere, D. Van den Heuvel, M. Rozentsvige, V. Kudriashov, et al., Proc. SPIE 7823-2A (2010).10.1117/12.864351Search in Google Scholar

[15] R. Bonam, H.-Y. Tien, A. Chou, L. Meli, S. Halle, et al., Proc. SPIE 9776-1C (2016).10.1117/12.2219601Search in Google Scholar

[16] S. Singh, S. Chen, T. Wähler, R. Jonckheere, T. Liang, et al., Proc. SPIE 7636-0Y (2010).10.1117/12.847026Search in Google Scholar

[17] T. Waehler, S. Singh, U. Dietze, R. Jonckheere and B. Baudemprez, in ‘Int. Symp. on EUV’, Lithography (2010).Search in Google Scholar

[18] U. Dietze, P. Dress, T. Waehler, S. Singh, R. Jonckheere, et al., Proc. SPIE 7985-0N (2011).10.1117/12.896911Search in Google Scholar

[19] J. Choi, H. Lee, J. Yoon, T. Shimomura, A. Friz, et al., in ‘Proc. SPIE 8166-1M’ (2011).10.1117/12.896836Search in Google Scholar

[20] R. Jonckheere, D. Van den Heuvel, A. Pacco, I. Pollentier, B. Baudemprez, et al., Proc. SPIE 9256-0L (2014).10.1117/12.2070045Search in Google Scholar

[21] S. Singh, D. Dattilo, U. Dietze, A. J. Kadaksham, I.-Y. Jang, et al., Proc. SPIE 8880-10 (2013).10.1117/12.2031430Search in Google Scholar

[22] I.-Y. Jang, A. John, F. Goodwin, S.-Y. Lee, B.-G. Kim, et al., Proc. SPIE 9256-0I (2014).10.1117/12.2069991Search in Google Scholar

[23] R. Jonckheere, E. Verduijn, G. Watanabe, N. Fukugami, Y. Sakata, et al., Proc. SPIE 9658-0H (2015).10.1117/12.2197682Search in Google Scholar

[24] R. A. Claus, A. R. Neureuther, P. P. Naulleau and L. Waller, Proc. SPIE 9235-1A (2014).10.1117/12.2069073Search in Google Scholar

[25] A. Vaglio Pret, R. Gronheid, T. R. Younkin, M. J. Leeson and P.-Y. Yan, Proc. SPIE 8322-0N (2012).10.1117/12.916632Search in Google Scholar

[26] T. Yamane, Y. Kim, N. Takagi, T. Terasawa, T. Ino, et al., Proc. SPIE 9256-0P (2014).10.1117/12.2067566Search in Google Scholar

[27] R. Jonckheere, Y. Hyun, F. Iwamoto, B. Baudemprez, J. Hermans, et al., Proc. SPIE 6921-1W (2008).10.1117/12.771967Search in Google Scholar

[28] J. Hollenshead, L. Klebanoff, J. Vac. Sci. B 24, 118 (2006).10.1116/1.2150225Search in Google Scholar

[29] J. Hollenshead, L. Klebanoff, J. Vac. Sci. B 24, 61 (2007).10.1116/1.2140005Search in Google Scholar

[30] S. Bajt, H. N. Chapman, N. Nguyen, J. B. Alameda, J. C. Robinson, et al., Proc. SPIE 5037-236 (2003).10.1117/12.484966Search in Google Scholar

[31] U. Okoroanyanwu, A. Jiang, K. Dittmar, T. Fahr, et al., Proc. SPIE 7636-0H (2010).10.1117/12.847269Search in Google Scholar

[32] E. te Sligte, N. Koster, F. Molkenboer, P. van der Walle, P. Muilwijk, et al., Proc. SPIE 9985-20 (2016).10.1117/12.2240921Search in Google Scholar

[33] D. Wack, Q. Q. Zhang, G. Inderhees and D. Lopez, Proc. SPIE. 7748-1Y (2010).10.1117/12.864093Search in Google Scholar

[34] I. Englard, Y. Cohen, Y. Elblinger, S. Attal, N. Berns, et al., Proc. SPIE 7272-28 (2009).10.1117/12.815419Search in Google Scholar

[35] S. H. Han, J. Na, W. Cho, D. H. Chung, C.-U. Jeon, et al., Proc. SPIE 7985-0V (2011).10.1117/12.895209Search in Google Scholar

[36] S. Mangan, C. C. Lin, G. Hughes, R. Brikman, A. Goldenshtein, et al., Proc. SPIE 8166-12 (2011).10.1117/12.899067Search in Google Scholar

[37] M. Malloy, B. Thiel, B. D. Bunday, S. Wurm, M. Mukhtar, et al., Proc. SPIE 9423-19 (2015).10.1117/12.2175535Search in Google Scholar

[38] S. Iida, R. Hirano, T. Amano and H. Watanabe, J. Micro/Nanolithgr. MEMS MOEMS 15, 013510 (2016).10.1117/1.JMM.15.1.013510Search in Google Scholar

[39] http://semiengineering.com/19108/.Search in Google Scholar

[40] Y. Ekinci, P. Helfenstein, R. Rajeev, I. Mochi, I. Mohacsi, et al., Proc. SPIE 9985-1P (2016).10.1117/12.2242961Search in Google Scholar

[41] D. Hellweg, S. Perlitz, K. Magnusson, R. Capelli, M. Koch, et al., Proc. SPIE 9776-1A (2016).10.1117/12.2219247Search in Google Scholar

[42] J. H. Peters, S. Perlitz, D. Hellweg and R. Capelli, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[43] K. A. Goldberg, M. P. Benk, A. Wojdyla, D. G. Johnson and A. P. Donoghue, Proc. SPIE 9422-1A (2015).10.1117/12.2175553Search in Google Scholar

[44] I. Mochi, K. A. Goldberg, R. Xie, P.-Y. Yan and K. Yamazoe, Proc. SPIE 7969-1X (2011).10.1117/12.881652Search in Google Scholar

[45] T. Harada, Y. Tanaka, T. Watanabe and H. Kinoshita, in ‘Int. Symp. on EUV Lithography’ (2013).Search in Google Scholar

[46] S.-S. Kim, D. Lee, J. Park, E. Kim, C.-U. Jeon, et al., in ‘Int. Symp. on EUV Lithography’ (2013).Search in Google Scholar

[47] C. Zoldesi, K. Bal, B. Blum, G. Bock, D. Brouns, et al., Proc. SPIE. 9048-1N (2014).10.1117/12.2049276Search in Google Scholar

[48] D. Brouns, A. Bendiksen, P. Broman, E. Casimiri, P. Colsters, et al., Proc. SPIE 9776-1Y (2016).10.1117/12.2221909Search in Google Scholar

[49] D. Brouns, this Journal.Search in Google Scholar

[50] D. L. Goldfarb, Proc. SPIE 9635-0A (2015).10.1117/12.2196901Search in Google Scholar

[51] E. Gallagher, J. Vanpaemel, I. Pollentier, H. Zahedmanesh, C. Adelmann, et al., Proc. SPIE 9635-0X (2015).10.1117/12.2199076Search in Google Scholar

[52] I. Pollentier, J. Vanpaemel, J. U. Lee, C. Adelmann, H. Zahedmanesh, et al., Proc. SPIE 9776-20 (2016).10.1117/12.2220031Search in Google Scholar

[53] J. U. Lee, J. Vanpaemel, I. Pollentier, C. Adelmann, H. Zahedmanesh, et al., Proc. SPIE 99850C (2016).10.1117/12.2243019Search in Google Scholar

[54] I. Pollentier, C. Adelmann, C. Huyghebaert, J. U. Lee, M. Timmermans, et al., Proc. SPIE 10143 (2017) (in press).10.1117/12.2257891Search in Google Scholar

[55] P. Jansen, M. Kamali, A. Kempa, R. Kox, R. de Kruif, et al., Proc. SPIE 9048-1N (2014).Search in Google Scholar

[56] D. Brouns, Pellicle TWG, in ‘SPIE-AL’ (2016).Search in Google Scholar

[57] J. Kruemberg, Pellicle TWG, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[58] D. Dattilo, U. Dietze and J.-W. Hsu, Proc. SPIE 9635-1B (2015).10.1117/12.2202188Search in Google Scholar

[59] T. Liang, J. Magana, K. Chakravorty, E. Panning and G. Zhang, Proc. SPIE 9635-09 (2015).10.1117/12.2202724Search in Google Scholar

[60] D. L. Goldfarb, W. Broadbent, M. Wylie, N. Felix and D. Corliss, Proc. SPIE 9776-1H (2016).10.1117/12.2218454Search in Google Scholar

[61] R. Jonckheere, F. Iwamoto, N. Stepanenko, A. M. Goethals and K. Ronse, ‘Int. Symp. on EUV Lithography’ (2008).Search in Google Scholar

[62] M. Waiblinger, K. Kornilov, T. Hofmann and K. Edinger, Proc. SPIE 7545-0P (2010).10.1117/12.863542Search in Google Scholar

[63] T. Robinson, D. Yi, D. Brinkley, K. Roessler, R. White, et al., Proc. SPIE 8166-1J (2011).10.1117/12.898503Search in Google Scholar

[64] R. Jonckheere, D. Van Den Heuvel, F. Iwamoto, N. Stepanenko, A. Myers, et al., Proc. SPIE 7379-0R (2009).10.1117/12.824268Search in Google Scholar

[65] R. Jonckheere, D. Van den Heuvel, T. Bret, T. Hofmann, J. Magana, et al., Proc. SPIE 8166-0E (2011).Search in Google Scholar

[66] A. Erdmann, P. Evanschitzky, T. Bret and R. Jonckheere, Proc. SPIE 8322-0E (2012).10.1117/12.916411Search in Google Scholar

[67] G. McIntyre, E. Gallagher, T. Robinson, A. C. Smith, M. Lawliss, et al., Proc. SPIE 8679-1I (2013).10.1117/12.2014935Search in Google Scholar

[68] A. Barty, P. B. Mirkarimi, D. G. Stearns, D. W. Sweeney, H. N. Chapman, et al., Proc. SPIE. 4688-385 (2002).10.1117/12.472313Search in Google Scholar

[69] T. Onoue, T. Shoki, J. Horikawa, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[70] P. Kearney, C. C. Lin, T. Sugiyama, H. Yun, R. Randive, et al., Proc. SPIE 7470-0X (2009).10.1117/12.835195Search in Google Scholar

[71] H. J. Kwon, R. Teki, J. Harris-Jones and A. Cordes, Proc. SPIE 8352-0X (2012).10.1117/12.923013Search in Google Scholar

[72] I.-Y. Kang, H.-S. Seo, B.-S. Ahn, D.-G. Lee, D. Kim, et al., Proc. SPIE 7636-1B (2010).Search in Google Scholar

[73] V. Jindal, P. Kearney, J. Harris-Jones, A. Hayes and J. Kools, Proc. SPIE 7969-1A (2011).10.1117/12.879467Search in Google Scholar

[74] J.-P. Urbach, J. F. W. Cavelaars, H. Kusunose, T. Liang and A. R. Stivers, Proc. SPIE. 5256-556 (2003).10.1117/12.518388Search in Google Scholar

[75] W. Cho, P. A. Kearney, E. M. Gullikson, A. Jia, T. Tamura, et al., Proc. SPIE 6517-0D (2007).10.1117/12.712990Search in Google Scholar

[76] S. Stokowski, J. Glasser, G. Inderhees and P. Sankuratri, Proc. SPIE 76360Z (2010).10.1117/12.850825Search in Google Scholar

[77] K. Seki, T. Isogawa, M. Kagawa, S. Akima, Y. Kodera, et al., J. Micro/Nanolithgr. MEMS MOEMS 15, 021004 (2016).10.1117/1.JMM.15.2.021004Search in Google Scholar

[78] R. Jonckheere, D. Van den Heuvel, T. Abe, H. Hashimoto, C. Holfeld, et al., in ‘Int. Symp. on EUV Lithography’ (2009).Search in Google Scholar

[79] D. Van den Heuvel, R. Jonckheere, J. Magana, T. Abe, T. Bret, et al., Proc. SPIE 7823-1T (2010).10.1117/12.865812Search in Google Scholar

[80] R. Jonckheere, D. Van den Heuvel, M. Lamantia, B. Baudemprez, E. Hendrickx, et al., in ‘Int. Symp. on EUV Lithography’ (2010).Search in Google Scholar

[81] R. Jonckheere, D. Van den Heuvel, T. Bret, T. Hofmann, J. Magana, et al., Proc. SPIE 7985-0W (2011).10.1117/12.883854Search in Google Scholar

[82] T. Terasawa, T. Yamane, T. Tanaka, T. Iwasaki, O. Suga, et al., Proc. SPIE 7271-22 (2009).10.1117/12.813602Search in Google Scholar

[83] T. Suzuki, H. Miyai, K. Takehisa, H. Kusunose, T. Yamane, et al., Proc. SPIE 8441-15 (2012).10.1117/12.964983Search in Google Scholar

[84] H. Miyai, T. Suzuki, K. Takehisa, H. Kusunose, T. Yamane, et al, Proc. SPIE 8701-18 (2013).10.1117/12.2030712Search in Google Scholar

[85] T. Murachi, T. Amano, T. Suzuki and H. Miyai, Proc. SPIE 9048-20 (2014).10.1117/12.2046130Search in Google Scholar

[86] R. Jonckheere, D. Van den Heuvel, N. Takagi, H. Watanabe and E. Gallagher, Proc. SPIE 9422-16 (2015).10.1117/12.2085801Search in Google Scholar

[87] N. Takagi, H. Watanabe, D. Van den Heuvel, R. Jonckheere and E. Gallagher, Proc. SPIE 9658-0F (2015).10.1117/12.2197622Search in Google Scholar

[88] R. Jonckheere, N. Takagi, H. Watanabe, T. Yamane, D. Van den Heuvel, et al., in ‘Int. Symp. on EUV Lithography’ (2015).Search in Google Scholar

[89] R. Jonckheere, T. Yamane, N. Takagi, H. Watanabe and C. Beral, in ‘Int. Symp. on EUV Lithography’ (2016).Search in Google Scholar

[90] K. A. Goldberg, A. Barty, P. Seidel, K. Edinger, R. Fettig, et al., Proc. SPIE 6517-0C (2007).10.1117/12.712202Search in Google Scholar

[91] T. Yamane, T. Iwasaki, T. Tanaka, T. Terasawa, O. Suga, et al., Proc. SPIE 7379-0H (2009).10.1117/12.824258Search in Google Scholar

[92] J. Burns and M. Abbas, Proc. SPIE 78240 (2010).Search in Google Scholar

[93] A. Elayat, P. Thwaite and S. Schulze, Proc. SPIE 8522-1W (2012).10.1117/12.979154Search in Google Scholar

[94] Z. J. Qi, J. H. Rankin, M. Lawliss, K. D. Badger and C. Turley, J. Micro/Nanolithgr. MEMS MOEMS 15, 023502 (2016).10.1117/1.JMM.15.2.023502Search in Google Scholar

[95] A. A. Kagalwalla and P. Gupta, J. Micro/Nanolithgr. MEMS MOEMS 13, 043005 (2014).10.1117/1.JMM.13.4.043005Search in Google Scholar

[96] G. Zhang, T. Liang, S. Satyanarayana, S. Misra, K. K. Chakravorty, et al., Proc. SPIE 9985-XX (2016).Search in Google Scholar

[97] R. Jonckheere, Invited presentation at Photomask and Next Generation Lithography Mask Technology (Yokohama, April 5–7, 2017), to be published in Proc. SPIE.Search in Google Scholar

[98] SEMI Standard P37, see http://www.semi.org/en/Standards.Search in Google Scholar

[99] SEMI Standard P48, see http://www.semi.org/en/Standards.Search in Google Scholar

[100] Pei-yang Yan, Proc. SPIE 7488-19 (2009).10.1002/adfm.200900093Search in Google Scholar

[101] A. A. Kagalwalla, M. Lam, K. Adam and P. Gupta, Proc. ASP-DAC (2014).Search in Google Scholar

[102] R. Jonckheere, T. Bret, D. Van den Heuvel, J. Magana, W. Gao, et al., Proc. SPIE 81661G (2011).10.1117/12.898864Search in Google Scholar

[103] T. Bret, R. Jonckheere, D. Van den Heuvel, C. Baur, M. Waiblinger, et al., Proc. SPIE8322-0C (2012).10.1117/12.918322Search in Google Scholar

[104] M. Waiblinger, R. Jonckheere, T. Bret, D. Van den Heuvel, C. Baur, et al., Proc. SPIE 8441-0F (2012).10.1117/12.978285Search in Google Scholar

[105] M. Waiblinger, T. Bret, R. Jonckheere and D. Van den Heuvel, Proc. SPIE 8522-1M (2012).10.1117/12.966387Search in Google Scholar

[106] D. Van den Heuvel, R. Jonckheere, T. Bret and M. Waiblinger, in ‘Int. Symp. on EUV Lithography’ (2012).Search in Google Scholar

[107] A. Erdmann, P. Evanschitzky, T. Bret and R. Jonckheere, Proc. SPIE 8679-0Y (2013).10.1117/12.2011444Search in Google Scholar

[108] J. Harris-Jones, E. Stinzianni, C. Lin, V. Jindal, R. Teki, et al., J. Micro/Nanolithgr. MEMS MOEMS 12, 013007 (2013).10.1117/1.JMM.12.1.013007Search in Google Scholar

[109] R. Jonckheere, D. Van den Heuvel, M. Lamantia, J. Hermans, E. Hendrickx, et al., ‘Int. Symp. on EUV Lithography’ (2009).Search in Google Scholar

Received: 2017-3-6
Accepted: 2017-4-19
Published Online: 2017-6-8
Published in Print: 2017-6-27

©2017 THOSS Media & De Gruyter, Berlin/Boston

Articles in the same Issue

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
https://doi.org/10.1515/aot-2017-0017
Keywords for this article
contamination; EUV lithography; mask defects; ML-defects; particles

Articles in the same Issue

  1. Cover and Frontmatter
  2. Views
  3. Patterning roadmap: 2017 prospects
  4. Community
  5. Conference Notes
  6. News from the European Optical Society (EOS)
  7. Topical issue: Optical Nanostructuring
  8. Editorial
  9. Next-generation lithography – an outlook on EUV projection and nanoimprint
  10. Tutorial
  11. Photoresists in extreme ultraviolet lithography (EUVL)
  12. Review Articles
  13. Light sources for high-volume manufacturing EUV lithography: technology, performance, and power scaling
  14. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
  15. EUV mask defectivity – a process of increasing control toward HVM
  16. Development and performance of EUV pellicles
  17. A review of nanoimprint lithography for high-volume semiconductor device manufacturing
  18. Large area nanoimprint by substrate conformal imprint lithography (SCIL)
  19. Laser interference patterning methods: Possibilities for high-throughput fabrication of periodic surface patterns
  20. Research Articles
  21. A full-process chain assessment for nanoimprint technology on 200-mm industrial platform
  22. Challenges of anamorphic high-NA lithography and mask making
  23. Research Article
  24. Chip bonding of low-melting eutectic alloys by transmitted laser radiation
Sign up now to receive a 20% welcome discount
Institutional Access
How does access work?
Have an idea on how to improve our website?
Please write us.
© 2025 De Gruyter Brill
Downloaded on 21.9.2025 from https://www.degruyterbrill.com/document/doi/10.1515/aot-2017-0017/html
Scroll to top button