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Interaction of Radiation Defects with the Surface of Silicon
-
V. I. Kuznetsov
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Chapters in this book
- Frontmatter I
- Contents 335
-
Original Papers
-
Structure
- Solid Phase Epitaxial Growth Anisotropy of Vacuum-Deposited Amorphous Silicon 345
- A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal 355
- Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects 365
- Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy 373
- Extended Defects in Vanadium Doped Rutile 379
- Phase Transitions in Antimony at Hydrostatic Pressure up to 9 GPa 389
- Structural Perfection of Selective GaAs Regions in Si Substrate Windows 399
-
Lattice properties
- Superelasticity Effects in Single Crystals of Cu-15% Al-2% Co with Non-Coherent Particles Due to Twinning 405
- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Bays 413
- Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet 421
-
Defects, atomistic aspects
- A Quantitative Analysis of Image Contrast from Extrinsic Stacking Faults 425
- Fracture in LiF Bicrystals at Plastic Deformation 441
- Motion of Partial Dislocation in Silicon Carbide 449
- Dynamic Alterations of the Surface Composition during Sputtering of Silicides 459
- Interaction of Radiation Defects with the Surface of Silicon 467
- Low-Energy Implantation of Arsenic in Silicon 475
-
Magnetism
- The Influence of Anisotropy-Controlled Neel Relaxation on Magnetostatic Properties of Ferrofluids 481
- Planar Hall Effect in Thin Amorphous RE-TM Films with Perpendicular Anisotropy 491
-
Extended electronic states and transitions
- Electron Tunnelling in Pb/Ag Ultrathin Layered Structures 497
-
Localized electronic states and transitions
- A New (Non-Copper-Induced) 1.35 eV Emission Band in n-Type GaAs 503
- The Effect of Dislocations on the Charge-Carrier Recombination Processes in Irradiated Silicon 511
- Current DLTS Spectra of MIS Structures Due to Dielectric Polarization of the Insulator 519
- Model of the Electroluminescence in Short-Pulse-Excited Thin-Film Structures Based on ZnS: Mn 527
- The Effect of Heat Treatment on Compensated CZ Silicon 533
-
Electric transport
- Photoconductivity and Energy Level Structure of 2,4,7-Trinitro-9-Fluorenone Thin Films 537
- The Effect of Void Size on the Resistivity of Sintered Tungsten 545
- Transport Properties of n-Type CuInSe2 553
- Doping Properties of Pb and Ge in Bi2Te3 and Sb2Te3 561
- Electrical and Galvanomagnetic Properties of Films in the CuxFe1-xCr2S4 System 569
- Photovoltaic Effects in Nematic and Cholesteric Mesophases Containing Nonmesogenic Compounds 575
-
Device-related phenomena
- The Double SQUID as a Digital Memory Cell 581
-
Short Notes
-
Structure
- Commensurate-Commensurate Phase Transitions in (NH4)2CoCl4 595
- Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation 599
- On the Phase Transition of KH2PO4 at T 110°C 603
- On the Phase Transition and Crystal Field Effects in FeSiF6*6H2O2 607
- Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 611
-
Lattice properties
- The Linear Thermal Expansion Coefficient of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate 615
-
Defects, atomistic aspects
- Small Angle Neutron Scattering on a Reactor Beam Irradiated Silicon Single Crystal 619
- An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients 623
- VK Centres in Thermo-Exoemission from CsBr:Tl 627
- Multipulse 1H NMR Study of Proton Self-Diffusion in Scandium and Lutetium Dihydride 631
-
Magnetism
- Isotopic Effect in Neutron-Irradiated Fe40Ni40B20 Alloys 637
- The Structural Diagrams of Magnetic Decompositive Alloys 641
- Magnetic Moment and Its Temperature Variation of Amorphous (Fe0.5Ni0.5)1-xBx Alloys 647
- Magnetic Moment of Amorphous Co1-xNbx Alloys and Friedel' s Model 651
- Magnetoelastic Properties of Fe1-xBx Amorphous Thin Films 655
-
Extended electronic states and transitions
- Composition Dependence of the Optical Energy Gap in Pb1-xHgxTe Alloy Thin Films 659
-
Localized electronic states and transitions
- Concentrational 3.urn Stimulated Emission Tuning in the (Gd1-XErx)3Al5O12 Crystal System 663
-
Electric transport
- Electrical Properties of Electron- and Proton-Irradiated GaAs and ZnGeAS2 Solid Solutions 669
- Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique 673
- Native Acceptor Defects in Chlorine Doped Single Crystals of CdTe 677
-
Device-related phenomena
- Temperature Dependence of Minority Carrier Lifetime in yPE GaP:N, Te 683
- Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors 687
-
Pre-Printed Titles
- of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 691
- Backmatter 699
Chapters in this book
- Frontmatter I
- Contents 335
-
Original Papers
-
Structure
- Solid Phase Epitaxial Growth Anisotropy of Vacuum-Deposited Amorphous Silicon 345
- A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal 355
- Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects 365
- Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy 373
- Extended Defects in Vanadium Doped Rutile 379
- Phase Transitions in Antimony at Hydrostatic Pressure up to 9 GPa 389
- Structural Perfection of Selective GaAs Regions in Si Substrate Windows 399
-
Lattice properties
- Superelasticity Effects in Single Crystals of Cu-15% Al-2% Co with Non-Coherent Particles Due to Twinning 405
- Method for Obtaining the Spectrum of Plastic Strains of Mesoscopic Volume Elements in Fatigued Materials Investigated by X-Bays 413
- Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet 421
-
Defects, atomistic aspects
- A Quantitative Analysis of Image Contrast from Extrinsic Stacking Faults 425
- Fracture in LiF Bicrystals at Plastic Deformation 441
- Motion of Partial Dislocation in Silicon Carbide 449
- Dynamic Alterations of the Surface Composition during Sputtering of Silicides 459
- Interaction of Radiation Defects with the Surface of Silicon 467
- Low-Energy Implantation of Arsenic in Silicon 475
-
Magnetism
- The Influence of Anisotropy-Controlled Neel Relaxation on Magnetostatic Properties of Ferrofluids 481
- Planar Hall Effect in Thin Amorphous RE-TM Films with Perpendicular Anisotropy 491
-
Extended electronic states and transitions
- Electron Tunnelling in Pb/Ag Ultrathin Layered Structures 497
-
Localized electronic states and transitions
- A New (Non-Copper-Induced) 1.35 eV Emission Band in n-Type GaAs 503
- The Effect of Dislocations on the Charge-Carrier Recombination Processes in Irradiated Silicon 511
- Current DLTS Spectra of MIS Structures Due to Dielectric Polarization of the Insulator 519
- Model of the Electroluminescence in Short-Pulse-Excited Thin-Film Structures Based on ZnS: Mn 527
- The Effect of Heat Treatment on Compensated CZ Silicon 533
-
Electric transport
- Photoconductivity and Energy Level Structure of 2,4,7-Trinitro-9-Fluorenone Thin Films 537
- The Effect of Void Size on the Resistivity of Sintered Tungsten 545
- Transport Properties of n-Type CuInSe2 553
- Doping Properties of Pb and Ge in Bi2Te3 and Sb2Te3 561
- Electrical and Galvanomagnetic Properties of Films in the CuxFe1-xCr2S4 System 569
- Photovoltaic Effects in Nematic and Cholesteric Mesophases Containing Nonmesogenic Compounds 575
-
Device-related phenomena
- The Double SQUID as a Digital Memory Cell 581
-
Short Notes
-
Structure
- Commensurate-Commensurate Phase Transitions in (NH4)2CoCl4 595
- Epitaxial Regrowth of Amorphous or Polycrystalline Silicon Layers on Silicon Single Crystals and Bridging Epitaxy by Flash Lamp Irradiation 599
- On the Phase Transition of KH2PO4 at T 110°C 603
- On the Phase Transition and Crystal Field Effects in FeSiF6*6H2O2 607
- Détermination de la structure cristallographique de la phase de type G Ni16Mn6As7 611
-
Lattice properties
- The Linear Thermal Expansion Coefficient of a GaxIn1-xAsyP1-y Layer on InP:Sn Substrate 615
-
Defects, atomistic aspects
- Small Angle Neutron Scattering on a Reactor Beam Irradiated Silicon Single Crystal 619
- An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients 623
- VK Centres in Thermo-Exoemission from CsBr:Tl 627
- Multipulse 1H NMR Study of Proton Self-Diffusion in Scandium and Lutetium Dihydride 631
-
Magnetism
- Isotopic Effect in Neutron-Irradiated Fe40Ni40B20 Alloys 637
- The Structural Diagrams of Magnetic Decompositive Alloys 641
- Magnetic Moment and Its Temperature Variation of Amorphous (Fe0.5Ni0.5)1-xBx Alloys 647
- Magnetic Moment of Amorphous Co1-xNbx Alloys and Friedel' s Model 651
- Magnetoelastic Properties of Fe1-xBx Amorphous Thin Films 655
-
Extended electronic states and transitions
- Composition Dependence of the Optical Energy Gap in Pb1-xHgxTe Alloy Thin Films 659
-
Localized electronic states and transitions
- Concentrational 3.urn Stimulated Emission Tuning in the (Gd1-XErx)3Al5O12 Crystal System 663
-
Electric transport
- Electrical Properties of Electron- and Proton-Irradiated GaAs and ZnGeAS2 Solid Solutions 669
- Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique 673
- Native Acceptor Defects in Chlorine Doped Single Crystals of CdTe 677
-
Device-related phenomena
- Temperature Dependence of Minority Carrier Lifetime in yPE GaP:N, Te 683
- Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors 687
-
Pre-Printed Titles
- of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) 691
- Backmatter 699