The Temperature Dependence of the Effective Threshold Energy for Atom Displacement in Tantalum

Kapitel in diesem Buch

1. Frontmatter I
2. Classification Scheme II
3. Contents 417
4. Original Papers
5. Structure
6. Mössbauer Study of the Reaction Kinetics of Hexagonal M-Phase Ferrites 427
7. Dynamics of Solid Solution Formation in Cu-Ni Mixture under Plastic Flow at High Pressure 437
8. Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating 443
9. Intermediate Smectic A-State at Nematic-Smectic C Phase Transition at Tilted Orientation 451
10. Strain Field Observation and Lattice Stability at the Tip of Thermoelastic Cu-Zn-Al Martensite Plates 457
11. Focus Dependence of the Black-White Contrast of Small Point Defect Clusters on Transmission Electron Microscope Images of Crystalline Specimens 467
12. Etude de validité d'un modèle de réseau de précipités sphériques pour la description de la remise en solution des précipités 0 dans les alliages Al-Cu 483
13. Departures from Stoichiometry of BiTeI Crystals Grown from the Vapour Phase 493
14. Lattice properties
15. Focusing of Nonlinear Ultrasonic Waves in Viscous Thermoelastie Materials with Spherical Inclusions 499
16. Optical Properties of the Two Crystal Modifications of the Organic Conductor (BEDT-TTF)₂I₃ 509
17. Defects, atomistic aspects
18. On the Dose Dependence of the Formation of Z₁ Centres in KCl:Ca 517
19. Transmission Electron Microscopy Observations of Dislocations and Twins in Polycrystalline Zirconium 521
20. Effect of Chlorine Implantation on Phosphorus Predeposition in Silicon 533
21. The Size Distribution of Macroscopic Defects in Media Containing Gas Admixture 541
22. Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced y-Spectroscopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique 549
23. Extended Defects in Deformed Rutile 559
24. Magnetism
25. Exchange and Dipolar Interactions in TbF₃ 571
26. Magnetic After-Effects in Nitrogen-Charged α-Fe Following Low-Temperature Electron- and Neutron-Irradiation 581
27. A Quantitative Characterization of Magnetic Defects by Domain Nucleation 595
28. Magnetic Ordering in the System Ca(Cu_1-x Mn_x)₃Mn₄O₁₂ 601
29. Localized electronic states and transitions
30. Thermally Stimulated Exoelectron Emission and Spectra of Thermoluminescence in NaCl:Ca, Cu and NaCl:Cu Single Crystals 609
31. Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon 617
32. Shallow Energy States in CdTe 623
33. Analysis of Non-Exponential Filling in DLTS on p-n Junctions. Application to Dominant Traps in AlGaAs Lasers 629
34. Electric transport
35. Injection and Thermodepolarization Currents in GaS:Er Single Crystals 639
36. Ionic Conduction in Rhodamine-Doped Polyester Polymer 647
37. Minority Carrier Lifetimes in PbS_0.1Se _0.9Determined from Diffusion Length by a Scanning Laser Microprobe 653
38. Conductivity Instabilities and Polarization Effects of Bi₁₂ (Ge, Si)O₂₀ Single-Crystal Samples 657
39. Photoconductivity of CdS_xSe_1-x with Controlled Deviation from Stoichiometry 673
40. I - U Characteristics of Non-Crystalline As-Se-Cd Thin Films 679
41. The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers 683
42. Device-related phenomena
43. On the Role of the Back Contact in DLTS Experiments with Schottky Diodes 693
44. Influence of Humidity on Electrical Properties of a MOS Structure with an Ultrathin Dielectric Film 699
45. Irradiation of MOS Transistors and Resulting Transport Processes in SiO₂ 703
46. Laser Annealing Effects on Electrochromic Properties of Amorphous Evaporated WO₃ Films 709
47. Short Notes
48. Structure
49. Preparation of Pb(Te, Se) Films by Simultaneous Evaporation of PbTe and Se 719
50. XPS Studies of RuO₂ Covered Titanium Oxides 723
51. F.C.C. Solid Solutions in Al-Ge and Al-Si Alloys under High Pressure 727
52. The Nature of the Intermediate Phase of PbZrO₃ 733
53. Lattice properties
54. Comparison of the Elastic Behaviour of CuGe₄P₃ with that of CuGe₂P₃ 737
55. Defects, atomistic aspects
56. The Temperature Dependence of the Effective Threshold Energy for Atom Displacement in Tantalum 743
57. Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements 747
58. Angular Distribution of Emitted X-Rays from an Ion-Implanted Layer 753
59. Effect of Structure Transformation on the Transient Creep Characteristics of Zn-40 wt% A1 and Zn-0.5 wt% A1 Alloys 757
60. Moiré Techniques by Means of Scanning Electron Microscopy 763
61. Positron Annihilation at Defects in Surface Layers of Steel Irradiated by Supercurrent Ion Beams 767
62. Magnetism
63. Remanent Magnetization and Wall Coercivity of Continuous Films with Perpendicular Anisotropy 773
64. Extended electronic states and transitions
65. Optical Properties of Films of the PbTe-SnS System 777
66. Localized electronic states and transitions
67. ESR Studies on Doped Hydrogenated Amorphous Silicon-Carbon 781
68. Influence of Hot Annealing and Cooling Rate on the Hall Effect and Piezoresistance in Transmutationally Doped and Ordinary Silicon Crystals 785
69. Photo- and Electroluminescence of Neodymium in GaS 791
70. A Method of Determination of the Trap Depth of Deep Centres by Capacitance Measurements 797
71. Magnetic Hyperfine Interaction of _92mNb in ZrFe₂ 801
72. Electric transport
73. Drift Mobility of Electrons in TlSbS₂ 807
74. Photovoltaic Effect in LiNbO₃:Mg 811
75. Thermally Stimulated Depolarization of TINO₂ near the Glass Transformation 815
76. Measurements of the Rectifying Barrier Height of Sputter Deposited Bi₂Te₃ Contacts on p-Silicon 819
77. Device-related phenomena
78. Energy Band Model of Ultrathin Solar Cells with Thickness up to 5 um 823
79. Variation of Switching Time of Silicon p-n-p-n Structures Irradiated by Fast Electrons 827
80. Influence of Electrode Material on the Electrical and Photoelectrical Properties of p-InP/AS₂Se₃ Heterostructures 831
81. Pre-Printed Titles 835