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Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation
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Kapitel in diesem Buch
- Frontmatter I
- Classification Scheme IV
- Contents 1
-
Review Article
- Failure Physics of Integrated Circuits and Relationship to Reliability 11
-
Original Papers
- Application of Hyperbolic Temperature Variation to the Analysis of Continuous and Stepwise Isochronal Curves and to the Problem of Quenching in Vacancies 49
- Grain-Boundary Deformation in Nickel Irradiated by α-Particles 55
- Injection and Thermodepolarization Currents in YbGa2Se4 Single Crystals 59
- Velocity Overshoot of Electrons in GaAs with Space Charge and Non-Uniform Field 67
- Electrical Resistivity of Some Directionally-Solidified Aluminum-Based Eutectic Alloys 73
- High-Field DC Conductivity in n-Type CdS Single Crystals Annealed in Molten Indium 83
- Luminescent Centre Formation Processes in Activated CdS Phosphors 91
- Dislocations in Deformed ZnSe Single Crystals as Studied by Weak-Beam Electron Microscopy 101
- Development of Faulted Dislocation Dipoles in Silicon during High Temperature Deformation 107
- Incoherent Light Annealing of Phosphorus-Doped Polycrystalline Silicon 117
- Easy Magnetization Axes in Materials with Combined Cubic and Uniaxial Anisotropics 121
- Anomalous Behaviour of Nonlinear Dielectric, Elastic, and Electromechanical Coefficients at Ferroelectric Phase Transitions 129
- Monte-Carlo Calculation of Electron Attenuation in SiO2 137
- Influence of Bulk and Interface Properties on the Electric Transport in ABO3 Perovskites 143
- TDPAC Investigation of 111Cd in Silicon after Recoil Implantation of the Parent Nuclei 111In 155
- A Simple Approach to the Analysis of Ion Collision Cascade in Solids Based on the Shock Wave Model 159
- On the Structure of the Precipitation-Free Zone in Two Al-Zn-Mg Alloys after Various Heat Treatments 169
- Thin-Film Photodetectors with High Quantum Yields Achieved by Induced Resonance Total Absorption 179
- The Efficiency of Electron Impact Excited Luminescence in ZnS Thin Film Devices 187
- The Influence of Substrate Temperature on the Oriented Growth of Ni and Ni2Si on Si(111) 195
- Breakdown Voltage Modeling in Mesa Power Devices 207
- Single Crystal 2,4-Hexadiynylene-Bis (p-Toluenesulfonate): Mastic Properties and Phase Transitions in the Monomer and Polymer 219
- Analysis of Resistivity, Hall Effect, and Magnetoresistance Measurements of Thin Bismuth Films by Means of an Anisotropic Two-Carrier Model 227
- Annealing Behaviour of Dilute FeCu, FeMn, and FeTi Alloys in the Temperature Range up to Stage III, Following Low-Temperature Electron Irradiation 235
- Xenon Ion Irradiation of α-Fe 243
- Calorimetric Determination of the Formation Energy for an Amorphous Layer on a Crystalline Silicon Substrate 251
- Recombination at Dislocations in Silicon 255
- Thermoluminescence of Z Centres in LiF (TLD-100) at Elevated Irradiation Temperatures 263
- Temperature Dependence of Intrinsic Magnetic Hardness in Some Rare-Earth Pseudobinary Compounds and Amorphous Materials 273
- Photogenerated Carrier Conduction Mechanisms for Schottky a-Si:H Solar Cells 283
- A Mössbauer-Spectroscopy Study of the Annealing of Supersaturated Solutions of 57Co in Silicon 289
- Low-Temperature Plasticity of CsBr and Inertial Effect of Dislocation Motion 301
- Effective Lifetime for Polycrystalline Solar Cells 311
- Specific Heat of Uranium Dioxide (UO2) between 0.3 and 50 K 317
- A Combined Atomistic and Monte Carlo Simulation of Point Defect-Dislocation Interactions 323
- Absolute Energy of the Nitrogen-Related Electron Trap in Gallium Phosphide 335
- The Crystal Structure and Coercive Force of SmCo5 Sintered Permanent Magnets 341
- Erratum 347
-
Short Notes
- New Data on Stimulated Emission of Nd3+ Ions in Disordered Crystals with Scheelite Structure 353
- Détermination des paramètres de la cristallisation de couches minces de sélénium amorphe par microscopie optique 357
- Superconducting Properties of LaMo6S8 Thin Films 361
- AES Studies on Thin Film MoSi2 367
- Mean Charge Depth in Non-Metallized Electrets 373
- Electric Field Enhanced Electron Emission from Gold Acceptor Level and A-Centre in Silicon 377
- Ferromagnetic Resonance in Single Particles of Amorphous F e81.5B14.5Si4 381
- Fluage du germanium sous différentes orientations 385
- Phase Transition Behaviour of VO 2 389
- Energy Transfer from Ce3+ to Eu3+ in (Y, Gd)F3 393
- Some Peculiarities of High Temperature Sensitization in CdS 397
- Ionenpaare zwischen Chrom und flachen Akzeptoren in Silizium 401
- Structural Features of Pd76B24 Amorphous Alloy 405
- Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation 409
- Quantum Yield of Current Carriers Excited by Electron Beams and Electron Penetration Depth in Thin GaP Films 415
- On the Electron Effective Mass in n-CuInTe2 421
- Electrical Properties of H+-Irradiated p-ZnGeAs2 425
- A Metastable Electron Compound Formed by Ion Irradiation 429
- A Theoretical Introduction for a Coincidence Site Lattice Base Computation 435
- Measurement of Nonlinear Electrooptic Effects in KDP Crystals 439
- An Infrared Study of the Glass System CaO-B2O3 • AL2 O3 • xFe2-O3 (0<x<1) 443
- Low-Temperature Anomalies in the Plasticity of Crystalline Materials 447
- Deep Level Transient Spectroscopy in TiO2:Nb 451
- X-Ray Diffraction Pattern and Morphology of Superconducting Nb3Sn Layer Grown on a Poly crystalline Nb Substrate of (111) Main Texture 455
- Decomposition of Supersaturated Antimony Solutions in Silicon Created by Pulsed Annealing of Ion-Doped Layers 459
- Pre-Printed Titles 463
- Classification Scheme 473
- Manuscripts and letters 474
Kapitel in diesem Buch
- Frontmatter I
- Classification Scheme IV
- Contents 1
-
Review Article
- Failure Physics of Integrated Circuits and Relationship to Reliability 11
-
Original Papers
- Application of Hyperbolic Temperature Variation to the Analysis of Continuous and Stepwise Isochronal Curves and to the Problem of Quenching in Vacancies 49
- Grain-Boundary Deformation in Nickel Irradiated by α-Particles 55
- Injection and Thermodepolarization Currents in YbGa2Se4 Single Crystals 59
- Velocity Overshoot of Electrons in GaAs with Space Charge and Non-Uniform Field 67
- Electrical Resistivity of Some Directionally-Solidified Aluminum-Based Eutectic Alloys 73
- High-Field DC Conductivity in n-Type CdS Single Crystals Annealed in Molten Indium 83
- Luminescent Centre Formation Processes in Activated CdS Phosphors 91
- Dislocations in Deformed ZnSe Single Crystals as Studied by Weak-Beam Electron Microscopy 101
- Development of Faulted Dislocation Dipoles in Silicon during High Temperature Deformation 107
- Incoherent Light Annealing of Phosphorus-Doped Polycrystalline Silicon 117
- Easy Magnetization Axes in Materials with Combined Cubic and Uniaxial Anisotropics 121
- Anomalous Behaviour of Nonlinear Dielectric, Elastic, and Electromechanical Coefficients at Ferroelectric Phase Transitions 129
- Monte-Carlo Calculation of Electron Attenuation in SiO2 137
- Influence of Bulk and Interface Properties on the Electric Transport in ABO3 Perovskites 143
- TDPAC Investigation of 111Cd in Silicon after Recoil Implantation of the Parent Nuclei 111In 155
- A Simple Approach to the Analysis of Ion Collision Cascade in Solids Based on the Shock Wave Model 159
- On the Structure of the Precipitation-Free Zone in Two Al-Zn-Mg Alloys after Various Heat Treatments 169
- Thin-Film Photodetectors with High Quantum Yields Achieved by Induced Resonance Total Absorption 179
- The Efficiency of Electron Impact Excited Luminescence in ZnS Thin Film Devices 187
- The Influence of Substrate Temperature on the Oriented Growth of Ni and Ni2Si on Si(111) 195
- Breakdown Voltage Modeling in Mesa Power Devices 207
- Single Crystal 2,4-Hexadiynylene-Bis (p-Toluenesulfonate): Mastic Properties and Phase Transitions in the Monomer and Polymer 219
- Analysis of Resistivity, Hall Effect, and Magnetoresistance Measurements of Thin Bismuth Films by Means of an Anisotropic Two-Carrier Model 227
- Annealing Behaviour of Dilute FeCu, FeMn, and FeTi Alloys in the Temperature Range up to Stage III, Following Low-Temperature Electron Irradiation 235
- Xenon Ion Irradiation of α-Fe 243
- Calorimetric Determination of the Formation Energy for an Amorphous Layer on a Crystalline Silicon Substrate 251
- Recombination at Dislocations in Silicon 255
- Thermoluminescence of Z Centres in LiF (TLD-100) at Elevated Irradiation Temperatures 263
- Temperature Dependence of Intrinsic Magnetic Hardness in Some Rare-Earth Pseudobinary Compounds and Amorphous Materials 273
- Photogenerated Carrier Conduction Mechanisms for Schottky a-Si:H Solar Cells 283
- A Mössbauer-Spectroscopy Study of the Annealing of Supersaturated Solutions of 57Co in Silicon 289
- Low-Temperature Plasticity of CsBr and Inertial Effect of Dislocation Motion 301
- Effective Lifetime for Polycrystalline Solar Cells 311
- Specific Heat of Uranium Dioxide (UO2) between 0.3 and 50 K 317
- A Combined Atomistic and Monte Carlo Simulation of Point Defect-Dislocation Interactions 323
- Absolute Energy of the Nitrogen-Related Electron Trap in Gallium Phosphide 335
- The Crystal Structure and Coercive Force of SmCo5 Sintered Permanent Magnets 341
- Erratum 347
-
Short Notes
- New Data on Stimulated Emission of Nd3+ Ions in Disordered Crystals with Scheelite Structure 353
- Détermination des paramètres de la cristallisation de couches minces de sélénium amorphe par microscopie optique 357
- Superconducting Properties of LaMo6S8 Thin Films 361
- AES Studies on Thin Film MoSi2 367
- Mean Charge Depth in Non-Metallized Electrets 373
- Electric Field Enhanced Electron Emission from Gold Acceptor Level and A-Centre in Silicon 377
- Ferromagnetic Resonance in Single Particles of Amorphous F e81.5B14.5Si4 381
- Fluage du germanium sous différentes orientations 385
- Phase Transition Behaviour of VO 2 389
- Energy Transfer from Ce3+ to Eu3+ in (Y, Gd)F3 393
- Some Peculiarities of High Temperature Sensitization in CdS 397
- Ionenpaare zwischen Chrom und flachen Akzeptoren in Silizium 401
- Structural Features of Pd76B24 Amorphous Alloy 405
- Electrical Conduction in Silicon Nitride Thin Films under 15 keV He+ Irradiation 409
- Quantum Yield of Current Carriers Excited by Electron Beams and Electron Penetration Depth in Thin GaP Films 415
- On the Electron Effective Mass in n-CuInTe2 421
- Electrical Properties of H+-Irradiated p-ZnGeAs2 425
- A Metastable Electron Compound Formed by Ion Irradiation 429
- A Theoretical Introduction for a Coincidence Site Lattice Base Computation 435
- Measurement of Nonlinear Electrooptic Effects in KDP Crystals 439
- An Infrared Study of the Glass System CaO-B2O3 • AL2 O3 • xFe2-O3 (0<x<1) 443
- Low-Temperature Anomalies in the Plasticity of Crystalline Materials 447
- Deep Level Transient Spectroscopy in TiO2:Nb 451
- X-Ray Diffraction Pattern and Morphology of Superconducting Nb3Sn Layer Grown on a Poly crystalline Nb Substrate of (111) Main Texture 455
- Decomposition of Supersaturated Antimony Solutions in Silicon Created by Pulsed Annealing of Ion-Doped Layers 459
- Pre-Printed Titles 463
- Classification Scheme 473
- Manuscripts and letters 474