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Nanoelectronics
Device Physics, Fabrication, Simulation
Language:
English
Published/Copyright:
2021
About this book
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Author / Editor information
Joachim Knoch, University Aachen, Germany.
Topics
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Frontmatter
I -
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Preface
VII -
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How to Use the Book
IX -
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Contents
XI -
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1 Introduction
1 -
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2 Solid-State Physics Foundation
3 -
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3 Semiconductor Fabrication
85 -
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4 Basic Ingredients for Nanoelectronics Devices
160 -
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5 Metal–Oxide–Semiconductor Field-Effect Transistors
197 -
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6 Device Simulation
234 -
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7 Metal–Source–Drain Field-Effect Transistors
270 -
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8 Carbon Nanotube Field-Effect Transistors
303 -
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9 Steep Slope Transistors
322 -
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10 Device Based on Two-Dimensional Materials
357 -
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A Color Map for 2D Materials
375 -
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Bibliography
377 -
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Index
389
Publishing information
Pages and Images/Illustrations in book
eBook published on:
December 7, 2020
eBook ISBN:
9783110575507
Pages and Images/Illustrations in book
Front matter:
16
Main content:
390
Illustrations:
6
Coloured Illustrations:
238
eBook ISBN:
9783110575507
Keywords for this book
Nanoelectronic Devices; Transistors; Field Effect Transistors; Two-Dimensional Materials; Semiconductor; Metal-Oxide Semiconductor
Audience(s) for this book
Graduate students and Lecturers in Physics and Engineering.
