Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

Kosuke Takenaka; Masaharu Shiratani; Manabu Takeshita; Makoto Kita; Kazunori Koga; Yukio Watanabe

doi:10.1351/pac200577020391

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Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

Kosuke Takenaka , Masaharu Shiratani , Manabu Takeshita , Makoto Kita , Kazunori Koga and Yukio Watanabe

Published/Copyright: January 1, 2009

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From the journal Pure and Applied Chemistry Volume 77 Issue 2

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APA
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Chicago
Vancouver

Takenaka, Kosuke, Shiratani, Masaharu, Takeshita, Manabu, Kita, Makoto, Koga, Kazunori and Watanabe, Yukio. "Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition" Pure and Applied Chemistry, vol. 77, no. 2, 2005, pp. 391-398. https://doi.org/10.1351/pac200577020391

Takenaka, K., Shiratani, M., Takeshita, M., Kita, M., Koga, K. & Watanabe, Y. (2005). Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition. Pure and Applied Chemistry, 77(2), 391-398. https://doi.org/10.1351/pac200577020391

Takenaka, K., Shiratani, M., Takeshita, M., Kita, M., Koga, K. and Watanabe, Y. (2005) Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition. Pure and Applied Chemistry, Vol. 77 (Issue 2), pp. 391-398. https://doi.org/10.1351/pac200577020391

Takenaka, Kosuke, Shiratani, Masaharu, Takeshita, Manabu, Kita, Makoto, Koga, Kazunori and Watanabe, Yukio. "Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition" Pure and Applied Chemistry 77, no. 2 (2005): 391-398. https://doi.org/10.1351/pac200577020391

Takenaka K, Shiratani M, Takeshita M, Kita M, Koga K, Watanabe Y. Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition. Pure and Applied Chemistry. 2005;77(2): 391-398. https://doi.org/10.1351/pac200577020391

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Published Online: 2009-01-01

Published in Print: 2005-01-01

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https://doi.org/10.1351/pac200577020391

Keywords for this article

anisotropy; Cu interconnects; deposition profile; plasma chemical vapor deposition; trench

Articles in the same Issue

Plasma diagnostics by laser spectroscopic electric field measurement
Three-dimensional modeling of inductively coupled plasma torches
Laminar plasma jets: Generation, characterization, and applications for materials surface processing
Exploration of the deposition limits of microcrystalline silicon
Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition
Deposition mechanism of nanostructured thin films from tetrafluoroethylene glow discharges
Complex (dusty) plasmas: Examples for applications and observation of magnetron-induced phenomena
Three-dimensional transition map of flattening behavior in the thermal spray process
Diagnostics for advanced materials processing by plasma spraying
Spectroscopic and electrical study of rare-gas-based, hollow cathode luminescent discharges: Application to the lifetime and efficiency enhancement of mercury-free signs
Thermal plasma deposition from thick to thin coatings and from micro- to nanostructure
Atmospheric pressure plasma of dielectric barrier discharges
Practical guide to measurement and interpretation of magnetic properties (IUPAC Technical Report)