Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Articles in the same Issue

1. Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications
2. Study of the third order nonlinear optical properties of Zn1−xMgxSe and Cd1−xMgxSe crystals
3. Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality
4. Principles of VCSEL designing
5. Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers
6. Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures
7. Analysis of quadratic electrooptic response of BaTiO3 crystal in ferroelectric phase
8. Temperature dependence of linear electrooptic coefficients r 113 and r 333 in lithium niobate
9. Ordering of diagnostic information in encoded medical images. Accuracy progression
10. Adaptive edge detection method for images
11. Digital holographic cameras and data processing for remote monitoring and measurements of mechanical parts
12. Increasing resolution of digital images using edge-based approach
13. Perspective methods of human identification: Ear biometrics
14. Visualization of 3D variable in time object based on data gathered by active measurement system
15. Editorial