Distributions of electric parameters in MOS structures on 3C-SiC substrate

Articles in the same Issue

1. Using simple elastic bands to explain quantum mechanics: a conceptual review of two of Aerts’ machine-models
2. On the rotational dynamics of the rattleback
3. Two-dimensional motion of a parabolically confined charged particle in a perpendicular magnetic field
4. Factorization in the model of unstable particles with continuous masses
5. Solution to the equations of the moment expansions
6. Determination of the two dimensional distribution of the attempt relaxation times and activation energies from temperature dependence of dielectric dispersion
7. Characterization of CaTi0.9Fe0.1O3/La0.98Mg0.02NbO4 composite
8. The new method of fabrication of submicron structures by optical lithography with mask shifting and mask rotation
9. Magnetic resonance study of nanocrystalline 0.10MnO/0.90ZnO
10. Distributions of electric parameters in MOS structures on 3C-SiC substrate
11. Influence of terbium on structure and luminescence of nanocrystalline TiO2 thin films
12. Raman studies of Pd-C nanocomposites
13. Structural properties of transparent Ti-V oxide semiconductor thin films
14. Study of interface reactions between Ti/Al/Ni/Au metallization and AlGaN/GaN heterostructures
15. Modification of current-voltage characteristics of planar organic systems by nm-thick copper phthalocyanine or perylene dye interlayer