The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

Articles in the same Issue

1. Pre-low-mass X-ray binaries containing a black hole: investigating a detection mechanism
2. Coupling in Fe(2 ML)/V(y ML) and Fe(2 ML)/V(y ML)/Fe(3 ML)/V(y ML) (y ≥ 4) superlattices
3. Ab-initio calculation of band structure and linear optical properties of SbSI in para- and ferroelectric phases
4. Non-linear dynamics of spinodal decomposition in multi-component polymer systems. I. General approach
5. Structural analysis of base mispairing in DNA containing oxidative guanine lesion
6. Amplification of solitary optical waves in fibers with positive group velocity dispersion
7. The inhomogeneous quantum invariance group of commuting fermions
8. Electronic transport mechanism in polydiacetylene crystals — variable range hopping or phonon-assisted tunnelling
9. The oscillatory galvanomagnetic size-effect in multilayered structures
10. The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5
11. NIR photoresponse in the mixed phthalocyanine films