Home Coronene as a Model of Charcoal: Calibration of the Carbon-13 NMR Shift Tensor to Count Carbon Atoms at the Plane Edge*
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Coronene as a Model of Charcoal: Calibration of the Carbon-13 NMR Shift Tensor to Count Carbon Atoms at the Plane Edge*

  • H. A. Resing and D. L. VanderHart
Published/Copyright: January 30, 1987

Published Online: 1987-1-30
Published in Print: 1987-1-1

© R. Oldenbourg Verlag, München

Articles in the same Issue

  1. Magnetic Resonance Techniques for Surface Investigations*
  2. Differential T1 and T2 Relaxation of Coupled Spin Systems in High Magnetic Fields*
  3. Modern EPR-Related Methods in Surface Science and Heterogeneous Catalysis*
  4. Hydrogen Intercalation Compounds
  5. Variable Temperature Mössbauer Studies of Two-Dimensional Intercalation Compounds*
  6. Low Temperature Spin-Lattice Relaxation in TaS2(NH3)
  7. Diffusion Processes in LiC6 Studied by β-NMR*
  8. 7Li NMR Studies in Chevrel Phases LixMo6X8*
  9. 1H NMR Single Crystal Studies of Metal-Ammonia Intercalation Compounds in Layered Chalcogenides*
  10. NMR Studies of Hydrogen Containing Intercalation Compounds of h-WO3*
  11. 19F-NMR Investigations on SbF5-Graphite Intercalation Compounds*
  12. Motions Occurring in the Proton Conductor H2Sb4O11, 3H2O from 4 to 163 K Studied by Wide-Line Proton NMR Spectra Computation
  13. Coronene as a Model of Charcoal: Calibration of the Carbon-13 NMR Shift Tensor to Count Carbon Atoms at the Plane Edge*
  14. EPR of Cu2+ Ions in Pillared Clay*
  15. Electron Paramagnetic Resonance Studies of Interface Defects in Oxidized Silicon
  16. Structural Features at the Si — SiO2 Interface*
  17. Comparison of the Low-Temperature ESR Properties of Pb0 Defects Residing at the Interfaces of Differently-Oxidized Si/SiO2 Structures*
  18. On the Structure of Dangling Bond Defects in Silicon*
  19. Cyclotron Resonance Parameter Variations Induced by Paramagnetic Defects in Laser Processed Si*
  20. E′ Centers in Silicon Dioxide Films: A Comparison with Bulk Centers and their Role in “Rebound” Effects*
  21. Generation of Paramagnetic Point Defects in Silicon Dioxide Films on Silicon Through Electron Injection and Exposure to Ionizing Radiation*
  22. Defects at the Si/SiO2 Interface of SiO2 Precipitates in Silicon*
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